01APR2004 Search Results

M48T35AY

Abstract: M4T32-BR12SH1 M4T32-BR12SH6 M48T35AV M4T28-BR12SH1 SOH28 M4T28-BR12SH1 equivalent 6845
Contextual Info: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

M48T37V

Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44
Contextual Info: M48T37Y M48T37V 5.0 or 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration ■ Automatic power-fail chip deselect and WRITE

SO8w

Contextual Info: M25PE40 4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 4 Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical

VDFPN8 package

Contextual Info: M25P32 32-Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode

Contextual Info: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage

M48T37V

Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44 AI009
Contextual Info: M48T37Y M48T37V 5.0 or 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultralow power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration ■ Year 2000 compliant

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION - ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 2 .30 D CAROL STREAM, IL 60188 U.S.A. _ r m D □ □ □ □ □ □ □ □ □ □ □ □ □ □ □ □ c \ <^5 <^5 <^5 <^5

VDFPN8 package

Abstract: M25P32 SO8w
Contextual Info: M25P32 32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode

2157H

Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , LOC RESERVED. C O R P O R A T IO N . R E V IS IO N S D IS T 00 D E S C R IP T IO N A REVISED PER E C O - 0 9 - 0 1 7647

M48T35AY

Abstract: STMicroelectronics M4T32-BR12SH6
Contextual Info: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

vdfpn8

Abstract: M25PE40 ST10 01DEC20
Contextual Info: M25PE40 4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 33 MHz SPI Bus, Standard Pinout FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Industrial Standard SPI Pinout 4Mbit of Page-Erasable Flash Memory

M48T35AV

Abstract: M48T35AY SOH28
Contextual Info: M48T35AV 3.3V, 256Kbit 32Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

VDFPN 8x6

Abstract: 8x6mm M25P32 ST10 mlp 8x6
Contextual Info: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit)

M25PE40

Contextual Info: M25PE40 4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 4 Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical

M25PE40

Contextual Info: M25PE40 4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 4 Mbit page-erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical – Page Program in 0.8 ms (typical)

VDFPN8 package

Abstract: A22are SO8w package outline
Contextual Info: M25P32 32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features „ 32 Mbit of Flash memory „ 2.7 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum VDFPN8 (ME) 8 x 6 mm (MLP8) „ VPP = 9 V for Fast Program/Erase mode

M48T37V

Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44
Contextual Info: M48T37Y M48T37V 5.0 or 3.3V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra-low power SRAM, real time clock, power-fail control circuit, and battery ■ Frequency test output for real time clock software calibration ■ Year 2000 compliant

Contextual Info: T H I S DRAWING IS U N P U B L I S H E D . C O P Y RI G HT 2 0 0 3 R E L E A S E D F OR P U B L I C A T I O N ’ 00 3 LOC AD BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R | | 3 H T S R E S E R V E D . 00 PCB HOLE D I M : DR I L L E D HOLE = . 7 0 0=L 0 . 0 2 5mm

SO8 Wide Package

Abstract: M25PE40 ST10 VDFPN8 package
Contextual Info: M25PE40 4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 25 MHz SPI Bus, Standard Pinout PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Industrial Standard SPI Pinout 4Mbit of Page-Erasable Flash Memory

Contextual Info: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit)

M25PE40S

Contextual Info: M25PE40 4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 33 MHz SPI Bus, Standard Pinout Feature summary • Industrial Standard SPI Pinout ■ 4Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical)

VDFPN8

Contextual Info: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage

VDFPN8 package

Contextual Info: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface Feature summary • 32Mbit of Flash Memory ■ 2.7 to 3.6V Single Supply Voltage ■ SPI Bus Compatible Serial Interface ■ 50MHz Clock Rate maximum ■ VPP = 9V for Fast Program/Erase mode

74V1G66CTR

Abstract: STMicroelectronics SOT23 DATE CODE 74V1G66 74V1G66STR JESD97 DSA00361784 SOT323-5L wave soldering
Contextual Info: 74V1G66 Single bilateral switch Features • High speed: tPD = 0.3 ns typ. at VCC = 5 V tPD = 0.4 ns (typ.) at VCC = 3.3 V ■ Low power dissipation: ICC = 1 A (max.) at TA = 25 °C ■ Low "ON" resistance: RON = 6.5 Ω (typ.) at VCC = 5 V II/O = 1 mA