photomos AQV212 smd
Abstract: photomos AQV212 AQV217 AQV210 AQV212 AQV212A AQV214 AQV214H AQV215 AQV215A
Contextual Info: GU PhotoMOS AQV21P, AQV214H (Standard type) VDE TESTING (Reinforced type) GU PhotoMOS (AQV21P, AQV214H) Controls low-level input signals. Controls load voltage 60V to 600V. FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3
|
Original
|
aqv21aqv214haqv212aqv215+8aqv216aqv210aqv214photomos aqv212 smdphotomos aqv212aqv217aqv212aaqv215a
|
PDF
|
8085 wiring diagram
Abstract: ssr schematic circuit AQW21 8085 application AQW210SX AQW210S AQW210SZ AQW214S AQW214SX AQW214SZ
Contextual Info: GU PhotoMOS AQW21PS TESTING Super miniature design, SOP (2 Form A) 8-pin type. Controls load voltage 350V, 400V. SO package measuring (W) 4.4 x (L) 9.37 × (H) 2.1 mm (W) .173× (L) .369× (H) .083 inch —approx. 38% of the volume and 66% of the footprint size of
|
Original
|
aqw21aqw210saqw214saqw21s+8010404j8085 wiring diagramssr schematic circuit8085 applicationaqw210sxaqw210szaqw214sxaqw214sz
|
PDF
|
AQZ102
Abstract: il 100 diode AQZ104 AQZ202 AQZ105 AQZ107 AQZ204 AQZ205 AQZ207
Contextual Info: Power PhotoMOS AQZ10P, 20P High capacity PhotoMOS Relay. (Load current Max. 4A) DC load type is available. 3.5 .138 21 .827 12.5 .492 mm inch 1 2 - 3 + 4 AC/DC type 1 - 2 3 + - 4 + Power PhotoMOS (AQZ10P, 20P) FEATURES TYPICAL APPLICATIONS 1. High capacity PhotoMOS Relay in a
|
Original
|
aqz10010404jaqz102il 100 diode+7aqz104aqz202aqz105aqz107aqz204aqz205aqz207
|
PDF
|
AQV210EH
Abstract: catalog mosfet Transistor smd LED datasheet AQV210E AQV210EA AQV210EAX AQV210EHA AQV214E AQV214EA AQV214EH
Contextual Info: GU-E PhotoMOS AQV210E, AQV21PEH (Standard type) General use and economy type. DIP (1 Form A) 6-pin type. Reinforced insulation 5,000V type. VDE TESTING (Reinforced type) GU-E PhotoMOS (AQV210E, AQV21PEH) FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346
|
Original
|
aqv210eaqv21aqv210ehaqv214eh+9aqv21e010404jcatalog mosfet transistor smdled datasheetaqv210eaaqv210eaxaqv210ehaaqv214eaqv214ea
|
PDF
|
tk19
Abstract: tk1-5v TK1-12V tk19 035
Contextual Info: TK TESTING ULTRA LOW PROFILE 2 A POLARIZED RELAY 10.6 .417 TK RELAYS FEATURES 9.0 .354 • Low profile 4 mm .157 inch height • High contact capacity: 2 A • Surge withstand voltage between contact and coil: 2,500 V Telcordia 4.0 .157 mm inch SPECIFICATIONS
|
Original
|
010404jtk19tk1-5vtk1-12v+1tk19 035
|
PDF
|
TQ2SA-12V
Abstract: TQ2SA-L-12V DIODE SMD L26 smd transistor 079 smd transistor L45 smd diode L23
Contextual Info: TQ SMD TESTING TQ SMD RELAYS LOW-PROFILE SURFACE-MOUNT RELAY FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V
|
Original
|
010404jtq2sa-12vtq2sa-l-12vdiode smd l26+3smd transistor 079smd transistor l45smd diode l23
|
PDF
|
DS4E-M-DC24V
Abstract: DS1E-ML-DC6V DS4E-S-DC24V DS1E-M-DC12V DS1E-M-DC24V DS1E-M-DC48V DS1E-S-DC12V DS1E-S-DC24V DS1E-S-DC48V DS2E-ML-DC9V
Contextual Info: DS HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY FEATURES 9.9 .390 35.24 1.387 9.8 .386 9.9 .390 20 .787 9.8 .386 DS4E 9.9 .390 15 .590 DS RELAYS 9.8 .386 DS2E DS1E mm inch • High sensitivity: 200 mW pick-up power 100 mW pick-up power types available
|
Original
|
010404jds4e-m-dc24vds1e-ml-dc6vds4e-s-dc24v+7ds1e-m-dc12vds1e-m-dc24vds1e-m-dc48vds1e-s-dc12vds1e-s-dc24vds1e-s-dc48vds2e-ml-dc9v
|
PDF
|
TN2-12
Abstract: TN2-24 TN2-48
Contextual Info: TN SLIM POLARIZED RELAY FEATURES 5.6 .220 14 .551 TN RELAYS • Small header area makes higher density mounting possible • High sensitivity: 140 mW nominal operating power single side stable 3-12 V type 9.8 .386 • Surge voltage withstand: 1500 V FCC
|
Original
|
010404jtn2-12tn2-24tn2-48 |
PDF
|
RK1-5V
Abstract: RK1-12V RK1-24V RK1-L-12V RK1-L2-12V RK1-L-24V RK1R-12V RK1R-24V RK1R-L-12V RK1R-L-24V
Contextual Info: RK 1.5 GHz MICROWAVE RELAY 20.2 .795 11.2 .441 9.7 .382 mm inch RK RELAYS • Excellent high frequency characteristics Isolation: Min. 60dB at 1.5 GHz Insertion loss: Max. 0.3dB (at 900 MHz) • V.S.W.R.: Max. 1.5 (at 900MHz) • High sensitivity in small size
|
Original
|
900mhzrk1-12v010404jrk1-5v+8rk1-24vrk1-l-12vrk1-l2-12vrk1-l-24vrk1r-12vrk1r-24vrk1r-l-12vrk1r-l-24v
|
PDF
|