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CNY32

Abstract: 5300V
Contextual Info: G E SOLID STATE 01 DE I 3S7S0fll 00nfl3fc. 1 I Optoelectronic Specifications - S 3 Photon Coupled Isolator CNY32 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors The GE Solid State CNY32 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a low-cost plastic

Contextual Info: Preliminary Data Sheet Ü ^A T& T Microelectronics ATTL7554 Low-Power SLIC Features Description • Low active power typical 165 mW during on-hook transmission This electronic subscriber loop interface circuit (SLIC) is optimized for low power consumption while

Contextual Info: ADVANCE MICRON 1 — 8, 16, 32 MEG X 72 BUFFERED DRAM DIMMs " DRAM • U .S N P * . MT9LD872 X MT18LD1672 X MT36LD3272 X - M O DULE FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • JEDEC-standard ECC pinout in a 168-pin, dual in-line m emory module (DIMM)

Contextual Info: PD - 9.692A International üëiRectifier IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

Contextual Info: O rdering num ber: EN2048A 2SB1168/2SD1725 NO .2048A PNP/NPN EpitaxialPlanar SiliconTransistors 100V/4A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High fT . Excellent linearity of hpg

Contextual Info: International HjgRectifter PD - 9.693A IRGPC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: Power Transistore File Number 528 HARRIS S E M I C O N D 2N3442, 2N4347, 2N6262 S E CT OR 27E D • 4 3 0 5 5 7 1 Oül^flüT 7 H I H A S ‘T - 3 3 - 1 3 ' High-Voltage Silicon N-P-N Transistors TERMINAL DESIGNATIONS High-Power Devices for Applications in