00B23 Search Results

thyristor TAG 103 X

Abstract: thyristor TAG 103 Thyristor TAG TAG thyristor Thyristor TAG 22 400 thyristor st 103 BT150 U-09 thyristor TAG 13 Thyristor TAG 03 400
Contextual Info: PHILIPS INTERNATIONAL bSE 3> WM 711Dß2b 0Gfci23S0 bb2 • P H I N I - J BT150 k _ THYRISTORS Glass-passivated th yristo r in T 0-220A B envelope, featuring sensitive gate triggering as low as 200 juA.

DT139

Abstract: DT139F M1632 BT139F M1628 gate control circuits for bt139 for heating applications
Contextual Info: PHILIPS INTERN A T I O N A L bSE T> m 7110âE?b OObSBlfi Tôt. B I PHI N BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base, They are intended fo r use in applications requiring high bidirectional transient and blocking

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power • PidB = • High gain dBm at 4.9 GHz to 5.1 GHz

Contextual Info: HCS151MS S ttftlSSSl Radiation Hardened 8-Input Multiplexer S e p te m b e r 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si)

Contextual Info: f f l H A R R HCS 160MS IS S E M I C O N D U C T O R Radiation Hardened BCD Decade Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C

Contextual Info: æ HARRIS S E M I C O N D U C T O R H C S 1 2 5 M S Radiation Hardened Quad Buffer, Three-State September 1995 Features Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW 3 Micron Radiation Hardened SOS CMOS

DT139

Abstract: DT139F
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110flE?b 0 G b 2 3 1 0 Tôt. B I P H I N BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base, They are intended fo r use in applications requiring high bidirectional transient and blocking

IT 715 triac

Abstract: BT139 715 triac 1139G iron bh curve TRIAC TAG e3
Contextual Info: PHILIPS INTERNATIONAL bSE ì> B 711DÔSb DDfc.53G7 ITP I PHIN BT139 SERIES TRIACS Glass-passivated 16 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal resistances,

M2404

Abstract: BT138F triac 134 M3403 triac bt138f
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711002t. 0 ü b 2 2 R 5 J bS'i « P H I N BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SO T-186 envelopes, w h ic h fe a tu re an e le c tric a lly isolated m o u n tin g base. T h e y are intended f o r use in applica tio ns req u irin g high b id ire c tio n a l tra n sie n t and b lo ckin g

B1139

Abstract: d8655 TRIAC TAG 90 TAG 84 triac BT139 M1632 BT139 Series E tag l2 triac TRIAC TAG 96 B1139G
Contextual Info: PH ILIPS I N T E R N A T I O N A L b5E D H 7U0Ö2fc> DütiE307 ITO I PHIN BT139 SERIES TRIACS Glass-passivated 16 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal resistances,

DS75150J-8

Contextual Info: IDE D | L S O l l S b 0 0 b 5 3 4 3 1 — National Semiconductor / - 7 DS75150 Dual Line Driver General Description Features The DS75150 is a dual monolithic line driver designed to satisfy the requirements of the standard interface between data terminal equipment and data communication equip­

Contextual Info: I ll^ IC WORKS W137 Bx Notebook System Frequency Synthesizer Features • Maximized EMI suppression using IC WORKS’ Spread Spectrum Technology Key Specifications • Two copies of CPU output Supply Voltages: • Six copies of PCI output Synchronous w/CPU output

Contextual Info: HCS139MS Radiation Hardened Dual 2-to-4 Line Decoder/Demultiplexer S e p te m b e r 1 9 9 5 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)

Contextual Info: HCS157MS H A R R IS æ S E M I C O N D U C T O R Radiation Hardened Quad 2-Input Multiplexers September 1995 Features • Pinouts 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C

Contextual Info: fS Ì H A R R HCS138MS I S S E M I C O N D U C T O R Radiation Hardened Inverting 3-to-8 Line D ecoder/D em ultiplexer August 1995 Features Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • 3 Micron Radiation Hardened SOS CMOS

BT152

Abstract: BT152 Series d8550a VSA060-I D8550 D8552 aa t 224 PHILIPS BT152-400R D8551 TG 56369
Contextual Info: bSE D P H I L I P S INTERNATIONAL • T llQ B E b OQtiSBßS H P H IN BT152 SERIES THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications

triac bt 135

Abstract: triac BT 140 TAG 84 triac BT 139 F applications note TRIAC BT 139 bt 139 BT 140 triac BT139 triac BT 147 triac BT 24
Contextual Info: PHILIPS INTERNATIONAL b5E I> m 711DÖ2L DDLSBO? ITP I PHIN BT139 SERIES TRIACS Glass-passivated 16 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal resistances,

st486dx2-66

Abstract: ST486/DX/DX2
Contextual Info: ST486/DX/DX2 3 and 5Volt CPUs - ELECTRICAL SPECIFICATIONS 4.0 ELECTRICAL SPECIFICATIONS Electrical specifications in this chapter are valid for both the ST486DX and the clock-dou­ bled ST486DX2. The ST486DX2 differs from the ST486DX in that the ST486DX2 internal

NEC RDRAM 36

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

TAG 84 triac

Abstract: triac BT 140 TRIAC BT 139 TRIAC TAG 90 bt139 BT139G TRIAC TAG 96 bt139 Application BT139 Series E M1646
Contextual Info: PHILIPS INTERNATIONAL bSE » B 711DÖSL 00L.2307 ITO I BT139 SERIES TRIACS Glass-passivated 1 6 am pere triacs intended fo r use in applications requiring high b id irectio n a l tran sien t and b locking voltage c a p a b ility , and high th erm al cycling perform an ce w ith very lo w th erm al resistances,

Contextual Info: 33 HiSKVS HCS112MS Radiation Hardened DllSl JK Flip-Flop September 1995 Features • Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si)

BT138F

Abstract: TRIAC BT138F TLC 555
Contextual Info: PHILIPS INTERNATIONAL b SE ]> • 711GÛ2L. D G L 2 2 R S bS'i « P H I N BT138F SERIES J FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended for use in applications requiring high bidirectional transient and blocking

st4 triac

Contextual Info: PHILIPS INTERNATIONAL bSE D • 711GÛ2b DGb22RS b5^ BI PHI N BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion . |m 3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P idB = 42.5 dBm at 4.4 GHz to 5.0 GHz