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T017ESQ Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power • PidB = • High gain dBm at 4.9 GHz to 5.1 GHz |
OCR Scan |
tim4951-30lt017esqtim4951-solm4951-30l+2 |