00S41 Search Results

Contextual Info: •I 4302271 00S415S 33 HARRIS SSb ■ H AS IR FF230/231/232/233 IR FF230R /231R /232R /233R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -205A F • 4.5A and 5.5A, 150V - 200V • rDS on = 0 .4 0 and 0.6 0 • Single Pulse Avalanche Energy Rated*

BYV32E-100/150/200

Abstract: T0220AB PINNING-T0220AB
Contextual Info: PHI LIP S I N T E R N A T I O N A L MIE D B9 711002b 00S41Ö7 5 ttPHIN t - 2 3 '0 7 _ Ph ilip s C o m p o n e n ts Data sheet status Preliminary specification date of issue January 1991 GENERAL DESCRIPTION Glass passivated, high efficiency, rugged dual epitaxial rectifier

Contextual Info: 43 32271 H A Q0S413S R R ?b ô • HAS I S IR F F 1 2 0 /1 2 1 /1 2 2 /1 2 3 IR F F 1 2 0 R /1 2 1 R /1 2 2 R /1 2 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 0 5 A F • 5.0A and 6.0A, 80V - 100V • rDS(on = 0 .3 0H and 0 .40H

Contextual Info: ZILOG INC LIE D TRfiMOMB DDEMfl'IS H E «ZIL PRELIMINARY PRODUCT SPECIFICATION < $ 3 1 1 3 5 Z84C50 June 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ Power Interrupt function

Contextual Info: 4305271 D o s m a s STB • H a r r is HAS IRFP140R, IRFP141R IRFP142R, IRFP143R N -C hannel Power MOSFETs Avalanche Energy Rated August 1991 Features Package TO -247 TOP VIEW • 27A and 31 A, 80V - 100V • ros on = 0.0770 and 0.099ÎÎ DRAIN (TAB) • Single Pulse Avalanche Energy Rated

54175

Contextual Info: GEC P L E S S E Y M S E M I C O N D U C T O R S DS3594-3.3 54HSC/T Series RADIATION HARD HIGH SPEED CMOS/SOS LOGIC The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and the high

Contextual Info: •i 43G5571 O D S m t S MTS ■ 33 HARRIS HAS IR FF320/321/322/323 IRFF320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-205AF • 2.0A and 2.5A, 350V - 400V • rDS On = 1-8 fi and 2 .5 0 • Single Pulse Avalanche Energy Rated*

Contextual Info: • 430 5 57 1 0 0 S 4 1Ô D 701 ■ [g HARRIS HAS IRFF430/431/432/433 IRFF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 5 A F • 2 .2 5 A a n d 2 .7 5 A , 4 5 0 V - 5 0 0 V • rD S o n = and 2 .0 fl

error code e39

Abstract: jl audio 500 1 schematics SLE 77 M737-4 accelerator rockwell modem S2665 transistor SMD S33 gd241 FL 032 PIF MD130
Contextual Info: RC144ACFL and RC144ATFL Rockwell RC144ACFL and RC144ATFL Low Power, Integrated High Speed Data/Fax/Voice Modem Device Set _for Portable Applications_ INTRODUCTION FEATURES The Rockwell RC144ACFL and RC144ATFL integrated data/fax/voice modem device set supports high speed

Contextual Info: SGS-THOMSON TEA2014A VIDEO SWITCH • ■ . . 1 VIDEO OUTPUT 75 n -1 V p p NOT SWITCHED 1 SWITCHED VIDEO OUTPUT 2 V p p VIDEO CROSSTALK : 50 dB TYPICAL SHORT CIRCUIT PROTECTION OF INPUTS AND OUTPUTS ■ CLAMPED VIDEO INPUTS DIP8 Plastic package ORDER CODE : TEA2014A

ff-310

Contextual Info: • 4 3 0 2 5 7 1 2 3 H A o o s m y o R R 1 1 3 ■ HAS I S I R F F 3 1 0 / 3 1 1 / 3 1 2 / 3 1 3 I R F F 3 1 O R / 3 1 1 R / 3 1 2 R / 3 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 1.35A and 1.15A, 350V - 400V

Contextual Info: • M3 D5 E7 1 0 0 5 4 15 0 T74 ■ 2 3 H A R R IS HAS IRFF220/221/222/223 IRFF220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 3.0 A a n d 3.5 A , 1 5 0V - 2 0 0V • r D S on = ° - 8 f i an d

NEC 4216160

Contextual Info: M O S INTEGRATED CIRCUIT ju P D 4 2 S 16 1 6 0 ,4 2 1 6 1 6 0 ,4 2 S 1 8 1 6 0 ,4 2 18 16 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 w ords by 16 bits dynam ic CM O S RAMs.

Contextual Info: PCB Mounted Receptacle Assemblies Ordering Data □ □ □ □ □ - 6XX Dash number specifies contact finish [6 = 0.76 pm 30 pin. gold] and number of positions per row (5 through 50 in increments of 5). Base number specifies through-mount vertical receptacle configuration.

AMD k86

Contextual Info: PRELIMINARY Am186 ES/ESLV and Am188™ ES/ESLV AMD£I High Performance, 80C186-/80C188-Compatible and 80L186-/80L188-Compatible, 16-Bit Embedded Microcontrollers DISTINCTIVE CHARACTERISTICS • E86™ family 80C186-/188- and 80L186-/188compatible microcontrollers with enhanced bus

Contextual Info: TOSHIBA =10=17240 O D S M T M b 264 • T 0 S 2 TOSHIBA L 0 6 I C / M E M 0 R Y tR E SILICON GATE CMOS 262,144 WORDS x 16 BITS MULTIPORT DRAM TC524262 TC524265 D t a r g e t DESCRIPTION The TC524262/265 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits

sic marking e6

Abstract: r2s3 sic marking e7 dmo 365 rb Z88C0120VSC ZILOG Super8 Z8 super8 4be marking tda 2022 TCM FD 50
Contextual Info: ZILOG INC 4bE D • ^04043 □Q241G2 3 ■ ZIL - T - / 4 .9 - / q ~ 6 / < $ 2 iL G E P r e l im in a r y P r o d u c t Sp e c if ic a t io n Z88C00 CMOS SUPER8 ROMLESS MCU FEATURES ■ Full Super8 Instruction Set ■ 1.2 micron CMOS technology ■ Available in 44-, 48-, and 68-pin packages