0055B Search Results

infrared burglar alarm

Abstract: BFR200 FET 1127 L7E transistor fet junction transistor
Contextual Info: bt.SB'IBl 0055B07 b*ì4 H A P X Philips Semiconductors D ata sheet statu s Preliminary specification d a te o f issue April 1991 BFR200 N-channel junction field-effect transistor N AUER P H I L I P S / D I S C R E T E FEATURES • Ultra-low leakage performance

Contextual Info: RFX144V24-S23 and RFX96V24-S23 O Rockwell RFX144V24-S23 and RFX96V24-S23 MONOFAX Modem with DigiTalk Voice/ADPCM Audio, DigiTalk Speakerphone, and V.23 Full-Duplex Options INTRODUCTION The DigiTalk™ Speakerphone -S Option The Rockwell RFX144V24-S23 and RFX96V24-S23

0E907

Abstract: 0C062 095B9 0E31A tms320cxx 00071H 0A95 0730Ah 0A85 0646Ah
Contextual Info: Application Report SPRA503 Implementing Speech Data for French LPC Date andTime-Stamping DTS on the TMS320CXX DSP Gerardo Murillo Digital Signal Processing Solutions Abstract This document provides a vocabulary of French speech data coded in LPC (format D6). This

0a214

Abstract: 048E3 09376h 036D3 030B9H 036B6 08d06 09-D2 0A211 0817AH
Contextual Info: TMS320 DSP Number 84E DESIGNER’S NOTEBOOK Speech data for Spanish LPC Day-Time-Stamping DTS on TMS320Cxx Contributed by Gerardo Murillo Design Problem Where can I get Spanish speech data allowing generation of a vocal output for Date and Time Stamping (DTS) and voice prompts ?

Q67100-Q809

Abstract: 514171B
Contextual Info: SIEMENS 256k X 16-Bit Dynamic RAM Low Power 256k x 16-Bit Dynamic RAM with Seif Refresh HYB 514171BJ-60/-70/-80/-85 HYB 514171BJL-60/-70/-80/-85 Advanced Information • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time

TS02D

Abstract: ICL7665SCJA icl7665sipa ICL7665SAIJA
Contextual Info: 43D2271 0D55L32 450 Œ H A S H A F R F R IS I f i I S E M I C O N D U C T O R Ê m — M \ J CMOS Micropower Over/Under Voltage Detector Aprii 1994 Features Description • Guaranteed 10joA Maximum Quiescent Current Over Temperature The ICL7665S Super CMOS Micropower Over/Under

A3TE

Abstract: TCFT 1103 TC514260BFT A357 TC514260BJ-70 equivalent 514260 TC514273 TC514273BJ80 HDC3 TC514260BJ
Contextual Info: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

b1079

Contextual Info: Data Sheet October 1994 M A R T Microelectronics CW025 Triple Output-Series Power Modules: 36 Vdc to 72 Vdc Input; 25 W Features • Small size: 2.80 in. x 2.40 in. x 0.50 in. ■ Low output noise ■ Industry-standard pinout ■ Metal case ■ 2:1 input voltage range

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT _ MC-422000A32BA,422000A32FA 2M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32BA /FA series is a 2 097 152 words by 32 bits dynamic RAM module on which 4 pieces of 16M DRAM uPD 4218160 are assembled.

44256 dram

Abstract: reclaimer intel date code format 28F800B3 AT29C432 GF105 GM99
Contextual Info: D Flash Data Integrator FDI User’s Guide July, 1997 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions

BYV92-300

Abstract: BYV92 100 m2131 BYV92 BYV92-500U 28-UNF
Contextual Info: ^ N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 2SE D • ■ Il bbS3T31 0022bbl □ ■ II B Y V 9 2 ShHlbS ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop,ultra fast reverse recovery times, very low stored charge and soft recovery

SLE 4404

Abstract: Siemens SLE SLE4404C 416B GTM05366 SLE4404M2
Contextual Info: SIEM EN S Intelligent 416-Bit EEPROM with Internal PIN Check S L E 4404 Features • 416 x 1 bit organization • 208-bit user memory which can be configured as ROM , P R O M , read-protected P R O M and read-protected RO M • User memory protected by means of a changeable user

Contextual Info: ZIL06 INC ^ S L blE D D E • cHfl4043 DGE5b2fl b33 « Z I L Pr o d u c t S p e c if ic a t io n Z16C30 CMOS USC UNIVERSAL SERIAL CONTROLLER FEATURES ■ Twoindependent,0to10Mbit/sec,fullduplexchannels. each with two baud rate generators and one digital phase-locked loop for clock recovery.

81145

Contextual Info: Data Sheet August 1994 ; = AT&T Microelectronics FC020-Series Power Modules: dc-dc Converters; 28 Vdc Input, 20 W Features • Wide input range: 18 V to 36 V ■ Low profile: 0.5 in. ■ High power-density: 6 W/in.3 ■ Output overvoltage clamp ■ No minimum load

3 phase sine wave pwm c source code adsp

Abstract: dsp PWM inverter 3 phase sine wave pwm c source code for atmel family ECM 2.3 Motor PWM ADMC330KP pwm variable frequency drive circuit diagram chop gsm based speed control of any motor lb1617 atmel sine wave pwm circuit
Contextual Info: Single Chip OSP Motor Controller ADMC330 ANALOG DEVICES FEATURES Seven Analog Input Channels Acquisition Synchronized to PWM Switching Frequency Three-Phase 12-Bit PWM Generator Programmable Deadtime and Narrow Pulse Deletion 2.5 kHz Minimum Switching Frequency

TC514170BJ-80

Abstract: TC514170 TC514170BJ80 TC514170BJ70 TC514170BJ-70 tc514170b
Contextual Info: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques

Contextual Info: bbSB^l 00c?Sb34 34b H A P X N AMER PHILIPS/ DIS CRET E BST39 BST40 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in miniature plastic envelopes intended fo r use in am plifier and switching applications. Complementary p-n-p types are BST15/16.

Contextual Info: m 43D2271 ÜÜSSL15 3 7 1 H HAS ICL7662 HARRIS æ S E M I C O N D U C T O R CMOS Voltage Converter April 1994 Features Description • No External Diode Needed Over Entire Temperature Range The Harris ICL7662 is a monolithic high-voltage CMOS power supply circuit which offers unique performance ad­

HD61105TF

Contextual Info: HITACHI/ MCU/NPU SOE D • HHTbSOM GOSSbMB bOB ■ H I T 3 H D 6 1 1 0 4 ,H D 6 1 1 0 4 A -(Dot Matrix Liquid Crystal Graphic Display Column Driver) r ri ( Description Ordering Information HD61104, HD61104A is a column (segment) driver for large-area dot matrix liquid crystal graphic

Contextual Info: MITSUBISHI MICROCOMPUTERS M37733M4LXXXHP *•3 5 ^ “ SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION •In te rru p ts . 19 types, 7 levels The M37733M4LXXXHP is a single-chip microcomputer using the

sle4428

Abstract: SLE 4428 C
Contextual Info: SIEMENS Intelligent 1-KByte EEPROM with Write Protect Function SLE 4418 Intelligent 1-KByte EEPROM with Write Protect Function and Programmable Security Code PSC SLE 4428 Features • • • • • • • • • 1024 x 8 bit EEPROM organization Byte-wise addressing