0055 Search Results

belden rg59

Abstract: CPMC882 8218 8810 CPMC-88-10 CPMC-88-1 CPMC-88-18 415-0054-012 415-0054-024 8218 BNC
Contextual Info: Fixed Length Cable Assemblies INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST BNC STRAIGHT PLUG TO BNC STRAIGHT PLUG With Boot PART NUMBER 415-0054-012 415-0054-024 415-0054-036 415-0054-048 415-0054-060 415-0055-012 415-0055-024 415-0055-036

MSM5118165B

Abstract: TSOP 86 Package
Contextual Info: O K I Semiconductor MSM5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118165B achieves high integration, high-speed operation, and low-power

smd diode code SL

Abstract: Diode smd s6 46 160-0055X1 SMD MARKING g4
Contextual Info: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol

Contextual Info: ADV MICRO {MEMORY} fli 0257528 ADV MICRO MEMORY D E § 0557520 0055515 1 89D f-4 6 -2 3 -0 8 üf 25595 Am27S07 64-Bit Noninverting-Output Bipolar RAM > 3 PO DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor­

FSA2510

Abstract: FSA2619 FSA2620 tnd903
Contextual Info: DIODE ARRAYS PACKAGES AND CIRCUITS 14 6 1 7 D IP1-7 D IP 1-8 1 2 3 1 2 DAN215 4 - 8 700 - ^ < 4— 0.400 — ^ 0.400 — ^ A A ♦ 0.295 m ax A A 0.295 DAN401 YYYm t' 0055 _14 Places N ote 1 T T _ o 100 0.020 Dia n 0.300 Typ ' Note 1: DIP sockets have 0.020” diameter solder tail. Brass

Contextual Info: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. AD DIST R E V IS IO N S 39 P LTR A B 1A HOUSING MATERIAL: A POLYESTER, GLASS FILLED, FIRE RETARDANT, DESCRIPTION DATE DP 1321-96-22 EC 0504-0055-97

Contextual Info: ELPAC ELEKS/ E L P AC POUER TM D1 ^ 3 2 ^ 2 7 5 ? 3 2 9 2 7 5 7 E L P A C ELEKS, ELPAC POWER DDGGSSS □ 940 00555 D C /D C CONVERTERS Short Form FEATURES: Ü High efficiency H High stable output voltage Ü Compact and lightweight can be mounted on PCB Complete molded configuration

"Z3M"

Abstract: Z3M g MIL-202F-201A PENI Z3M Y 3m 3903
Contextual Info: JNPS-0891‐A, PD-0055 製品仕様書 Product Specification ３Ｍ 印 Power Clamp ﾎﾞｰﾄﾞﾏｳﾝﾄ ﾍｯﾀﾞｰ ｽﾄﾚｰﾄﾀｲﾌﾟ 356XX-6XXX-X00 PE 3M Power Clamp Board Mount Header Straight Type 356XX-6XXX-X00 PE APRV. T.Shimizu

Contextual Info: 8 6 7 4 5 3 2 1 REVISION S 2 D 3 FIN HEAT SINK 1.375 DIA. 0.467 HT. LTR DESCRIPTION O A ECN: 0S60-0055-04 ECR-06-013921 INIT APP'D E.T 03/01/04 S.D 03/11/04 E.T 6/19/06 V.K 6/20/06 1. MATERIAL: D HEAT SINK: ALUM. (BLACK ANODIZE) CLIP: BLACK PEI (UL94-VO)

Contextual Info: 8 7 6 4 5 3 2 1 REVISION S 2.000 DIA. 1-FIN HS: 0.250 HT. 2 D LTR DESCRIPTION O ECN: 0S60-0055-04 E.T 03/04/04 S.D 3/11/04 INIT APP'D A ECO-05-008423 E.T 9/15/05 B.P 12/1/05 A1 ECR-05-017787 E.T 12/13/05 B.P 12/13/05 D NOTE: 1. MATERIAL: 3 1 HEAT SINK: ALUM. (BLACK ANODIZE)

EM2420 atmega128

Abstract: 55V MOSFET P-Channel ZIGBEE, atmega128l AVR block diagram 120-0055-000E EM2420 crystal 8mHZ crystal 8Mhz datasheets RF MODULE CIRCUIT DIAGRAM all mosfet equivalent book
Contextual Info: Ember Developer Kit EM2420 Radio Frequency Communication Module Technical Specification Final 120-0055-000E 29 November 2004 Copyright 2002-2004 by Ember Corporation All rights reserved. The information in this document is subject to change without notice. The statements, configurations, technical data,

Contextual Info: Andy Zhang 2010/11/03 Wendy Chen 2011/09/05 - - ELX-T-005581-1 Gary Hsieh 2011/09/05 Released E C PDS: Rev :E STATUS:Released Printed: Sep 05, 2011 Andy Zhang 2010/11/03 Wendy Chen 2011/09/05 - - ELX-T-005581-1 Gary Hsieh 2011/09/05 Released E C PDS: Rev :E

TN6S240428S1L

Contextual Info: PartNumber 192900-0055 Wire Sealing Range, Signal Contact, Overall Diameter Ø1,70-2,70 .066-.106 Wire Sealing Range, Power Contact, Overall Diameter Ø2,70-4,00 (.106-.157) Product Family Trident Product Group Neptune Shape Circular Environmental Sealing

Contextual Info: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING 1 • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched -C.70 .530 .085 10 10X .050 MIN.

Fairchild ZN 1010

Abstract: GENERAL INSTRUMENT west 2500 ic ZN 415 FGE2000
Contextual Info: FGE Series ECL Gate Arrays PAIRCHIL.D A Schlum berc T'HO Qr>y 005596 January 1986 Description U/v\A m b The FGE Series of ECL gate arrays are the fastest silicon gate arrays com m ercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer

J374

Abstract: Trompeter BJ379
Contextual Info: DASH CONNECTOR NO TYPE -1 -2 -3 -4 -5 -6 -7 —a -9 -10 -1 1 -12 -13 -14 -15 -16 -17 PL75 CJ70 BJ79 BJ74 PL375 CJ370 BJ379 B J374 PL74 CJ70TL BJ79TL BJ74TL PL75FL CJ70FL n □ w nnri /^l-1_ BJ74FL PL73 MATERIAL /2\ 310-0002-33 3-0043-33 3-0018-33 3-0055-33

Contextual Info: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability

Contextual Info: /l/l/iXI/l/l 19-0055; Rev 0; 8/92 C M O S, 1 2 -B it9 S e ria l-In p u t _ M u ltip ly in g D A C 1.0 SCOPE 1.1 This specification covers the detail requirements for a serial-input digital-to-analog converter. This circuit is processed in accordance with MIL-STD-883 and is fully compliant to paragraph 1.2.1.

Contextual Info: HfcU INDICATES ORIGINAL DASH CDNNECTDR NÖ TYPE MATERIAL/2\ -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -1 1 -12 -13 -14 -15 -16 -17 310-0002-33 3-0043-33 3-0018-33 3-0055-33 315-0011-33 3-0066-33 3-0074-33 3-0073-33 310-0025-33 3-0217-33 3-0112-33 3-0105-33 310-0006-33

D043

Abstract: CJ70FL
Contextual Info: RID INDICATES MTG ASSEMBLE FIG HDLE PER FIG — 310-0002-32 1A — 3-D043-32 2A 3-0018-32 3A 10 3-0055-32 4A 11 — IB 315-0011-32 — 2B 3-0066-32 10 3-0074-32 38 3-0073-32 4B 11 — 310-0025-32 5A — 3-0217-32 6A 10 3-0112-32 7A 3-0105-32 11 BA — 310-0006-32

437HEX

Abstract: 11154
Contextual Info: ED DASH CDNNECTDR ND TYPE MATERIAL -1 -2 -3 -4 -5 -6 -7 -B -9 -10 -11 -12 -13 -14 -15 -16 -17 310-0002-24 3-0043-24 3-001B-24 3-0055-24 315-0011-24 3-0066-24 3-0074-24 3-0073-24 310-0025-24 3-0217-24 3-0112-24 3-0105-24 310-0006-24 3-0101-24 3-0052-24 3-0099-24

Contextual Info: DWG SIZE DASH CONNECTOR NO TYPE -1 -2 -3 -4 -5 -B -7 -B -9 -10 -11 -12 -13 -14 -15 -IB -Í7 PL75 CJ70 BJ79 BJ74 PL375 CJ370 BJ379 BJ374 PL 74 CJ70TL BJ79TL BJ74TL PL75FL CJ70FL BJ79FL BJ74FL PL73 MATERIAL 310-0002-32 3-0043-32 3-0018-32 3-0055-32 315-0011-32

EDS-5000

Abstract: 4-phase BIPOLAR STEPPER MOTOR 5v
Contextual Info: 005520 Ó 5 £ 0 GENERAL PURPOSE MOTION CONTROL IC HEW LETT PACKARD ít ñ HCTL-1000 TEC H N IC A L DATA Features NOVEMBER 1985 f\Jt' 3 38 jm JC§ D ALE b2 C 4 37 D A D 3 /D B 3 c 5 36 H RESET A D 4 /D B 4 c 6 35 3 AD5/DB5 c 7 34 H E XTC LK N C *C DC, D C BRUSHLESS A N D STEPPER MOTOR

Contextual Info: GWM 160-0055P3 VDSS = 55 V ID25 = 160 A Ω RDSon typ. = 2.3 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G5 S3 S5 Pins Gate G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 Pow s er Pin L- Applications MOSFETs Conditions Maximum Ratings