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    World Products Inc WPANT30004-SB2.

    Antenna Cellular 3dBi Gain 960MHz/2170MHz
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    Master Electronics WPANT30004-SB2. 1
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    TE Connectivity A1004SB20X1

    NTC THERMISTOR ASSEMBLY MOQ Reduction
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    Sager A1004SB20X1 85
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    Samtec Inc EQDP-014-20.04-SBL-TBR-5-F

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    Master Electronics EQDP-014-20.04-SBL-TBR-5-F
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    Sager EQDP-014-20.04-SBL-TBR-5-F 1
    • 1 $86.67
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    Amphenol Corporation SJTG06RT-10-04SB(014) L/C

    - Bulk (Alt: SJTG06RT1004SB014LC)
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    Amphenol Corporation SJT02RE-10-04SB(014) L/C

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    004SB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFQ268

    Contextual Info: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with


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    bfq268bfq268/1711002tot172a1+3bfq268/iot172a3004sbbd PDF

    Contextual Info: HARRIS SEIUCOND SECTOR m SfiE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H • 43D2271 GD4Sh72 13T H H A S 2N7271U, 2N7271H 2N7271H . Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 14A, 100V, RDS<on)» 0.180Q


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    frm1302n7271u2n7271h43d2271+5gd4sh72100krad300krad1000krad3000krad PDF

    amd 8086

    Contextual Info: PRELIMINARY 8 0 C 1 8 6 /8 0 C 1 88 CMOS High-lntegration 16-Bit Microprocessors Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Operation Modes Include — System-level testing support high-impedance test mode — Enhanced mode with • DRAM Refresh Control Unit


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    16-bit25-mhz20-mhz16-mhz+610-mhz64-kbyte80c186/80c1882575e50000aamd 8086 PDF

    Contextual Info: bOE D a2 3 5 bQ S 0 0 4 5 b 3 3 544 « S I E G SIEMENS SIE M EN S AKTIENfiESELLSCHAF PROFET BTS 542 D /E /F Preliminary Data • • • • • • • • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection


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    PDF

    Contextual Info: HA R R I S S E M I C O N D SE C T O R HARRIS SÔE D • 4 3 G 2271 D Ü 4 5 bflO 205 H H A S 2N7273D, 2N7273H 2N7273H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS130 D, R, H Radiation Hardened N-Channel Power MOSFETs January 1993


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    2n7273d2n7273hfrs13043d2271+3004sb2n7273r631uis PDF

    Contextual Info: hSE 1 □ □ 42b3b m 5T7 « H I T S A D E - 2 0 4 - 0 1 8 A Z HA16117F Series Low Power Supervisor ICs for Microprocessor System H IT A C H I oecR^ HITACHI/ <HCU/t1PU> Preliminary Description Features The HA16117F Series of ICs make a m icro­ processor (MPU) system fail-safe by monitoring


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    42b3bha16117fd04eti5044tbe04 PDF

    N80C188-20

    Abstract: N80C186-16 N80C188-12 80C186 N80C188 IN80C188-20 n80c1 80*186 800188 application note 80C186 programming
    Contextual Info: PRELIMINARY 8 0 C 1 8 6 /8 0 C 1 8 8 CMOS High-lntegration 16-Bit Microprocessors Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • O peration M odes Include — System-level testing support high-impedance test mode — Enhanced mode with • DRAM Refresh Control Unit


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    80c186/80c18816-bit80c86/c880hs7525+14004rbfc00-ref2s752s0000an80c188-20n80c186-16n80c188-1280c186n80c188in80c188-20n80c180*186800188 application note80c186 programming PDF

    N80C186-16

    Abstract: n80c186-12 N80C186-20 N80C188-16 80C186 80C188 80C188 amd microprocessor N80C188-20 IRL PIC N80C18612
    Contextual Info: PRELIMINARY 8 0 C 1 8 6 /8 0 C 1 8 8 CMOS High-lntegration 16-Bit Microprocessors Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • O peration M odes Include — System-level testing support high-impedance test mode — Enhanced mode with • DRAM Refresh Control Unit


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    80c186/80c18816-bit80c86/c8825-mhz+1420-mhz16-mhf0hs7525004rbfcn80c186-16n80c186-12n80c186-20n80c188-1680c18680c18880c188 amd microprocessorn80c188-20irl picn80c18612 PDF

    BFQ233

    Abstract: BFQ253A BFQ233A BFQ253
    Contextual Info: Product specification Philips Sem iconductors NPN 1 GHz video transistors PHILIPS INTERNATIONAL DESCRIPTION BFQ233; BFQ233A SbE I> m 7110flSb 00455^0 Tûb • PHIN PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a


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    t-33-05bfq233bfq233a7110fl2b+3bfq253bfq253ambb634 PDF

    TRANSISTOR S 813

    Abstract: BFQ265 BFQ265A NPN high frequency
    Contextual Info: ^^»r«Juc^pM jficatjon Philips Semiconductors NPN high frequency high voltage transistor PHILIPS 5bE T> INTERNATIONAL FEATURES m 711062b BFQ265; BFQ265A □□4ShS3 7TT • P H I N PINNING • High breakdown voltages • Low output capacitance 1 emitter PIN


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    ot128bbfq265bfq265a711062b+4t-33-05711062ltransistor s 813npn high frequency PDF