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    004BS Search Results

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    Vishay Intertechnologies PTN2010H2004BST5

    SMD Chip Resistor, 2 Mohm, ? 0.1%, 800 mW, 2010 [5025 Metric], Thin Film, Precision, PTN Series - Tape and Reel (Alt: PTN2010H2004BST5)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PTN2010H2004BST5 Tape & Reel 16 Weeks 500
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    • 100 -
    • 1000 $3.28
    • 10000 $2.24
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    Vishay Intertechnologies PTN2010H1004BST5

    SMD Chip Resistor, 1 Mohm, ? 0.1%, 800 mW, 2010 [5025 Metric], Thin Film, Precision, PTN Series - Tape and Reel (Alt: PTN2010H1004BST5)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PTN2010H1004BST5 Tape & Reel 16 Weeks 500
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    • 100 -
    • 1000 $2.74
    • 10000 $1.87
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    Vishay Intertechnologies RNR55C1004BSRSL

    - Custom Tape W/Leader (Alt: RNR55C1004BSRSL)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RNR55C1004BSRSL Tape w/Leader 28 Weeks 100
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    • 100 $110.70
    • 1000 $105.99
    • 10000 $104.81
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    Eaton Corporation TB200-04BS

    - Bulk (Alt: TB200-04BS)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TB200-04BS Bulk 45 Weeks, 4 Days 50
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    • 100 $13.60
    • 1000 $12.97
    • 10000 $12.97
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    Vishay Intertechnologies RNR55E1004BSM7665

    Through Hole Resistor, 1 Mohm, HDN RNR Series, 100 mW, ? 0.1%, Axial Leaded, 200 V, Metal Film - Bulk (Alt: RNR55E1004BSM7665)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RNR55E1004BSM7665 Bulk 25
    • 1 -
    • 10 -
    • 100 $99.50
    • 1000 $96.96
    • 10000 $96.96
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    004BS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RX3034B70W

    Abstract: mtt 95 a 12 n 0/Siemens MTT 95 A 12 N
    Contextual Info: I — 3 3 '~ l£ 3 DEVELOPMENT DATA RX3034B70W This d a ta s h e et c o n ta in s .advance in fo rm a tio n and sp e cific a tio n s are s u b je c t t o ch an g e w ith o u t n o tic e . PHILIPS international ^ 5bE T> 7110fl2b 004bS3b b2b IPHIN PULSED MICROWAVE POWER TRANSISTORS


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    rx3034b70w7110fl2b004b53bprolonge100+3711002bmtt 95 a 12 n0/siemens mtt 95 a 12 n PDF

    ha2526

    Abstract: HA7-2620 HA-2620 HA2622 HA-2625-5 HA2625 2625-5 HA2-2625-5
    Contextual Info: HARRIS SEMICOND SECTOR m W blE ] • 43G2B71 004bSM5 117 H H A S HA-2620, HA-2622 HARRIS HA-2625 SEMICONDUCTOR Very Wideband, Uncompensated Operational Amplifiers RN M SO B3 Features Description • Gain Bandwidth Product Ay 2 5). 100MHz • High Input Im pedance.500MQ


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    43g2b71004bsm5ha-2620ha-2622+10ha-2620/2622/2625100mhzha2620/2622/2625ha2526ha7-2620ha2622ha-2625-5ha26252625-5ha2-2625-5 PDF

    k 2645

    Abstract: K 2645 schematic circuit ha2645 K 2645 schematic
    Contextual Info: HARRIS SEMICOND SECTOR blE D • M302S71 004bSS2 357 ■ HAS HA-2640, HA-2645 ga H a r r is S E M I C O N D U C T O R “ ^ W 7 High Voltage Operational Amplifiers March 1993 Features Description • Output Voltage


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    ha-2640ha-2645m302s71004bss2+643q2271h302271k 2645k 2645 schematic circuitha2645k 2645 schematic PDF

    Contextual Info: bGE J> m fl23SbGS 004bS74 G73 » S I E G SIEMENS ,tr / "•‘T i "0 5 SFH 482301 GaAlAs-Laser Diode 500 mW SIEMENS AKTIENGESELLSCHAF Package Dimensions in mm 1. 2. 3. 4. Peltier-C ooler + NTC NTC Lase rdiode C athode 5. 6. 7. 8. Laserdiode Anode M onitor D iode A node


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    fl23sbgs004bs74 PDF

    C 3311 transistor

    Abstract: RZ2731B16W tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Contextual Info: RZ2731B16W Data sheet status date of Issue 1 ^ 5 3 ' •i f Product specification June 1992 NPN silicon pianar epitaxial -fJCTI I * r microwavejjower 11 _ — 7- SbE~~D 71 11 10 06 02 2b b 7 ■ OOHbSbO 14S OOHbSb A P P L IC A T IO N


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    rz2731b16w711002bt-33-11c 3311 transistor+1transistor 2.7 3.1 3.5 ghz cw PDF

    ca3078

    Contextual Info: blE T> • HARRIS SEniCOND SECTOR 4302271 0DMb233 752 H H A S HARRIS 8 EMICONOUCTOR March1993 Micropower Operational Amplifier Features Description • • • • • Low Standby P o w e r. AsLowAs700nW The CA3078 and CA3078A are high gain monolithic


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    0dmb233arch1993aslowas700nwca3078+4ca3078aand20ca307004b241 PDF

    HA 1137

    Abstract: STP60N05 STP60N05FI
    Contextual Info: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON l G  L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2


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    004b53cstp60n05stp60n05fi0g4b54s+3stp60n05/fi5g05970ha 1137 PDF

    EL2039

    Abstract: ha2830
    Contextual Info: HARRIS SEMICOND SECTOR m HARRIS I V blE D IHAS 4302271 QOMbSbl 3bT HA-2839 SEMICONDUCTOR Very High Slew Raté Wideband Operational Amplifier March 1993 Features Description • Law Supply Currant. 13mA • Vary High Slaw Rata .


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    ha-283925kwv600mhz10mhz+425v/nsha-2830el2039ha2830 PDF

    Contextual Info: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q


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    d0mbs32stp55n06lstp55n06lfistp55n+406lfi7t2t537d04b53flstp55n06l/fi PDF

    16N40

    Contextual Info: 7 cî 5 ei E 3 7 DD4hSbD bT2 •SGTH r Z Ï S G S -T H O M S O N Ä 7# IM tM IU ig T O iO O S S T W 16N40 N - CHANNEL ENH ANC EM ENT MODE PO W ER MOS TRA N SISTO R TYPE STW 16N40 V dss RDS on Id 400 V < 0.3 Q 16 A TYPICAL RDS(on) = 0.21 Q m AVALANCHE RUGGED TECHNOLOGY


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    16n40stw16n40 PDF

    UMOV

    Abstract: 4C550
    Contextual Info: Am386SXLV Advanced Micro Devices High-Performance, Low-Voltage, 32-Bit Microprocessor with 16-Bit Data Bus DISTINCTIVE CHARACTERISTICS • — SMI coupled with I/O instruction break feature provides transparent power off and auto resume of peripherals which may not be “power aware”


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    am386sxlv32-bit16-bit25-mhz+433-mhzam386umov4c550 PDF

    HD66214T

    Abstract: hitachi 4-bit lcd hd66214 97i-i Y1Y80
    Contextual Info: H D 66214T M ic ro -T A B (80-Channel Colum n Driver in M icro-TCP) Description Features The H D66214T, the colum n driver for a large liquid crystal graphic display, features as many as 80 LCD outputs pow ered by 80 internal LCD drive circuits. This device latches 4-bit parallel


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    hd66214t80-channelhd66214004bs31+4004b532hitachi 4-bit lcd97i-iy1y80 PDF

    Contextual Info: HARRIS SEMICON] SECTOR LIE ]> • HA-2548 3 “ SH S Precision, High Slew Rate, Wideband Operational Amplifier March 1993 Features • Description High Stow • Low Offset


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    ha-2548150mhz130db300nv+3hp5082-281050ns/dlvha-2543 PDF

    Contextual Info: H D66107T- LCD Driver for High Voltage D escription F eatures The HD66107T is a m ulti-output, high du ty ratio LCD driver used for large capacity dot m atrix LCD panels. It consists of 160 LCD drive circuits w ith a display du ty ratio u p to


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    d66107t------------hd66107thd66107tshd61104+1hd61105 PDF

    Contextual Info: H D66215T- Common Driver for a Dot Matrix Liquid Crystal Graphic Display with 100-Channel Outputs Description Features The HD66215T is a common driver for a large dot matrix liquid crystal graphic display (LCD). The driver’s 1 0 0 channels can be divided into two


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    d66215t-------------------------100-channelhd66215t101channel+2di01-di04004bsfci7 PDF

    IC A 3126

    Contextual Info: YA MA IC HI E L E C T R O N I C S INC bßE D • ^4553^ ODDDbO'i TS1 1 SCSI-H CONNECTORS yam a ich i — —— ■ NHS/NHPSeries Half Pitch Interface Connectors N H S * * * - OM - B S Straight Solder DIP T>pe Socket >Cross Section of Contact Area CL O CO


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    nhs026-004-nhs050-004-nhs068-004-27x12+7-002-bsnhs026-002-bsnhs050-002-bsnhs068-002-bs-004-bsnhs050-004-bsic a 3126 PDF

    Contextual Info: 7 ^ 3 3 - 7 3 Philips Components Data sheet status Product specification date o f Issue June 1992 RZ2731B48W NPN silicon planar epitaxial microwave power transistor 711002b 0Ü4L572 fc.L.7 SbE D PHILIPS INTERNATIONAL FEATU R ES A P P LIC A T IO N • Interdigitated structure; high


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    rz2731b48w711002b4l572fo-57d+3711dflsb711005b004bs77 PDF

    Contextual Info: T - 3 3 - lf ‘ RV3135B5X 711DßSb OG4bSDB 243 • P H I N ShE D PHILIPS INTERNATIONAL PULSED POWER TRANSISTOR FOR S-BAND RADAR NPN transistor fo r use in common-base pulsed power amplifiers fo r S-band radar 3.1 to 3.5 GHz . Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry and gold sandwich


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    rv3135b5xt-33-11711005b PDF

    HD61105

    Abstract: 66205TFL X57d HCD66205L zdx20 HD66840 HD66205 HD66205TL HD66205TF HA 1115
    Contextual Info: H D66205- Dot Matrix Liquid Crystal Graphic Display Common Driver with 80-Channel Outputs Description T he H D 66205F /H D 66205F L /H D 66205T F /H D 66205TFL/HD66205T/HD66205TL, the row LCD driver, features low output impedance and as many as 80 LCD outputs powered by 80 internal LCD


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    d66205--80-channelhd66205f/hd66205fl/hd66205tf/hd66205tfl/hd66205t/hd66205tl+14hd66205hd66205fhd66205flhd66205tfhd66205tflpow100hd6110566205tflx57dhcd66205lzdx20hd66840hd66205tlha 1115 PDF

    TL920

    Abstract: Am486DXL notebook 486 486DX MEMORY CONTROLLER Am486DXLV
    Contextual Info: P R E L IM IN A R Y Advanced Micro Devices Am486"'DXLV High-Performance, Low-Voltage, 32-Bit Microprocessor DISTINCTIVE CHARACTERISTICS • Operating voltage range 3.0 V to 3.6 V -The best microprocessor for portable PC applications ■ Multiprocessor Support


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    am48632-bit33-mhz86dxlv+5tl920am486dxlnotebook 486486dx memory controlleram486dxlv PDF

    HA1-2542-5

    Abstract: ha2642 HA2-2542-5 HP5062-2810 HA12542-2
    Contextual Info: HARRIS SEniCOND SECTOR blE D 4302271 OOHbSO? 303 HARRIS SEMICONDUCTOR Wideband, High Slew Rate, High Output Current Operational Amplifier March 1903 Features Description • Stablest Gains of 2 or Greater The HA-2542 is a wideband, high slew rate, monolithic oper­


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    70mhz300v4i100ma53mhz+8ha-254250v/ps13d5e71ha1-2542-5ha2642ha2-2542-5hp5062-2810ha12542-2 PDF

    RX1214B150W

    Contextual Info: T ^ 3 3 - lè RX1214B150W PHILIPS INTERNATIONAL SbE D Bi 7110fl2b DDHbSlE 1T2 « P H I N — M IC R O W A V E P O W E R T R A N S IS T O R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power am plifier, operating in the 1.2 to 1.4 G H z frequency range.


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    rx1214b150w7110fl2b711002b7z242 PDF

    common base amplifier circuit designing

    Abstract: RX2731B90W
    Contextual Info: - 3 t 3 - RX2731B90W PHILIPS INTERNATIONAL SbE J> • 711Dô2fa D 0 4 b S 3 D 10Ô « P H I N PULSED MICROWAVE POWER TRANSISTOR N P N silic o n planar e p ita x ia l m icrow ave pow er transistor, intended fo r use in a com m on-base class-C broadband pulse pow er a m p lifie r w ith a frequency range o f 2.7 to 3.1 G H z.


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    t-33-rx2731b90w711dfi2bd04bs3d+3711005b0d4b534common base amplifier circuit designing PDF

    RELE RAS 1210

    Abstract: YSTT
    Contextual Info: TO SHIBA TMP95C063 CMOS 16-Bit M icrocontroller TMP95C063F 1. O utline and Features T M P 95C 063F w as developed a s a high-speed, advanced 16-bit microcontroller for a ran ge of mid- to large-scale equipment. T M P 95C 063F is presented in a 144-pin p lastic fla t package.


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    tmp95c06316-bittmp95c063f144-pin+5tlcs-90/90016m-byte95c063-228rele ras 1210ystt PDF