0D4B534 Search Results

Contextual Info: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q

common base amplifier circuit designing

Abstract: RX2731B90W
Contextual Info: - 3 t 3 - RX2731B90W PHILIPS INTERNATIONAL SbE J> • 711Dô2fa D 0 4 b S 3 D 10Ô « P H I N PULSED MICROWAVE POWER TRANSISTOR N P N silic o n planar e p ita x ia l m icrow ave pow er transistor, intended fo r use in a com m on-base class-C broadband pulse pow er a m p lifie r w ith a frequency range o f 2.7 to 3.1 G H z.

Contextual Info: - 3 3 - 1S> RX2731B90W t PHILIPS INTERNATI ON AL ShE D • 7110fl2b 00MbS30 106 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier with a frequency range o f 2.7 to 3.1 GHz.