003D7 Search Results

BUK481-100A

Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • 1^53^31 003D721 'ìlO M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope suitable for surface mount applications.

k553 transistor

Abstract: K553 K-553 BUK553-100A BUK553-100B T0220AB transistor t buk553
Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bbSa^l 003D7^S Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

28F010

Abstract: AM28F010 AMD 478 socket pinout
Contextual Info: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption

Contextual Info: KS6034C CMOS ELECTRONICS INTRODUCTION KS6034C is a single chip CMOS LSI for data bank with clock, calculator and phone number memory functions. FUNCTION - 3 operating modes available : telephone mode, calculator mode, clock mode 1 Telephone mode • Stores up to 20 items (1 item : 7 characters for

Contextual Info: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

Contextual Info: Card Edge Connectors Board-to-Board, Wire-to-Board Catalog 82619 A ' f r i t ! 4 i '13 0 Revised 8-96 Crimp Snap Twin Leaf Connectors Product Facts • Crimp snap-in, solder eye­ let, .025 [0.64] square posted and right angle contacts on .100 [2.54], .125 [3.18] or .156 [3.96]

BUK551-100A

Abstract: BUK551-100B T0220AB
Contextual Info: N AMFR P H I L I P S / D I S C R E T E bTE D • ^53^31 QQ3D77S QT1 ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope.

Contextual Info: GEC PLESSEY SI M ! PRELIMINARY INFORMATION O N D I NWK938 155 Mb/s ATM TWISTED PAIR PHY/PMD TRANSCEIVER DEVICE WITH CLOCK RECOVERY The NWK938 is a Physical Medium Dependent device designed to operate at 155 Mb/s over category 5 unshielded or shielded twisted pair cable using the ATM Forum

Contextual Info: S i GEC PLESSEY SI Mit PRELIMINARY INFORMATION O N I> l M V 1 8 1 7 SINGLE CHIP TELETEXT DECODER FOR 625 LINE OPERATION The MV1817 Television Data Service, TDS, IC incorporates all the features of the MV1815 with identical registers, so that MV1815 register control is software

31325

Abstract: 313136
Contextual Info: AMP Catalog 82619 Card Edge Connectors Board-to-Board, Wire-to-Board Revised 8-96 Linear Z I F Connectors Product Facts Linear Z I F Connectors • M inim izes force needed to install and rem ove printed circuit boards ■ Availa ble in lever and bell crank styles

Contextual Info: M7E D • «E3Sb05 0D3Db70 □ »SIEG SAB 8088 SIEMENS AKTIENGESELLSCHAF 8-Bit Microprocessor “ Preliminary SAB 8088 5 MHz SAB 8088-2 8 MHz SAB 8088-1 • 8-bit data bus interface • 16-bit internal architecture • Direct addressing capability to 1 M byte o f m em ory

K545

Contextual Info: N AI1ER PHILIPS/DISCRETE b 'lE I> bb53R31 DD3D7bS 14E « A P X Product Specification Philips Semiconductors BU K545-1OOA/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: MV1817 HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire United Kingdom SN2 2QW. Tel: 01793 518000 Fax: (01793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067–0017,

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N ; E PGA202/203 1 Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS • DIGITALLY PROGRAMMABLE GAINS: DECADE MODEL— PGA202 GAINS O F 1 ,10,100,1000

pal 003a

Abstract: V1817 GEC 44 3A teletext sub-code SCS30 SCR30
Contextual Info: S i GEC PLESSEY M V1817 SINGLE CHIP TELETEXT DECODER FOR 625 LINE OPERATION Supersedes version in April 1994 Consumer 1C Handbook, HB3120—2.0 T he M V1817 Television D ata Service, TD S, 1C incorporates all the features o1 th e M V1815 w ith identical

HEX2000

Abstract: tms320f2812 program example SPRU078 SPRU095 SPRU513 tms320f2812 spi TMS320F2812 code composer studio SPRC125 tms320f2812 cpu code composer studio TMS320F2812
Contextual Info: Application Report SPRAAQ2 – October 2007 TMS320F281x Boot ROM Serial Flash Programming Jeff Stafford. ABSTRACT This application report describes the implementation of TI’s Flash application program

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only DESCRIPTION The INA131 is a low cost, general purpose G = 100 instrumentation amplifier offering excellent accuracy. Its 3-op amp design and small size make it ideal for a wide range of applications. • LOW DRIFT: 0.25nV/°C max

Burr-Brown 4206

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BU RR-BROW N E PGA204 PGA205 3 Programmable Gain INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMMABLE GAIN: PGA204: G=1, 10, 100, 1000V/V PGA205: G=1, 2, 4, 8V/V The PGA204 and PGA205 are low cost, general pur­

TDA 4706

Abstract: qml-38535 CDFP2-F14 CQCC1-N20
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REVSTATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD M IC R O C IR C U IT D R A W IN G THIS DRAWING IS AVAILABLE

D0307

Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
Contextual Info: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory

Contextual Info: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only • BUFFERED GUARD DRIVE PINS • LOW OFFSET VOLTAGE: 2mV max • HIGH COMMON-MODE REJECTION: 84dB (G = 10) • LOW QUIESCENT CURRENT: 1mA • INPUT OVER-VOLTAGE PROTECTION: +40V APPLICATIONS • LABORATORY INSTRUMENTATION

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 DD3D7DD 1Tb BIAPX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53T31 CI030745 3S4 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET_ _ GENERAL DESCRIPTION N -channel enhancem ent mode