0034B Search Results

tic125

Contextual Info: 7.0 Electrical and Mechanical Specifications 7.1 Electrical and Environmental Specifications 7.1.1 Absolute Maximum Ratings C A U T IO N - Stressing the device parameters above absolute maximum ratings may cause permanent damage to the device. This is a stress rating only. Functional operation o f the device at these

tca 335 A

Abstract: tca 765 TCA335A
Contextual Info: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range

DG34B

Contextual Info: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

KM44C4104bk

Abstract: cd-rom circuit diagram
Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

2032LV

Abstract: PT12 0138a 0031e 0034B ispLSI1000 isplsi architecture
Contextual Info: 2000, 2000E and 2000V Family Architectural Description global GLB clock input signals CLK0, CLK1, and CLK2. These three clocks are used for clocking all the GLBs configured as registers in the device. They feed directly to the GLB clock input via a clock multiplexer. CLK0 is

Contextual Info: P R E L IM IN A R Y COM’L: -15/20 M A C H 4 6 5 -1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 208 pins In PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, In-circult programmable

pal 014

Contextual Info: PRELIMINARY COM’L: -15/20 MACH355-15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 144 Pins In PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, In-circuit programmable ■ Flexible clocking

7486 XOR GATE

Abstract: circuit diagram of half adder using IC 7486 7486 2-input xor gate ic 7486 XOR GATE pin configuration IC 7486 pin configuration of 7486 IC vhdl code for vending machine pin DIAGRAM OF IC 7486 data sheet IC 7408 laf 0001
Contextual Info: Lattice Semiconductor Handbook 1994 Click on one of the following choices: • Table of Contents • How to Use This Handbook • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. Lattice Semiconductor Handbook 1994 i Copyright © 1994 Lattice Semiconductor Corporation.

PLSI 1016-60LJ

Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
Contextual Info: Lattice Semiconductor Data Book 1996 Click on one of the following choices: • Table of Contents • Data Book Updates & New Products • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. ispLSI and pLSI Product Index Pins Density

T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

BF 331 TRANSISTORS

Abstract: bdt60bf
Contextual Info: BDT60F; BDT60AF BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT 186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.

Contextual Info: Philips Components D a tasheet status Product specification date of issue Apr* 1991 BDS949/951/953/9S5 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope S0T223 intended for general

BDS78

Contextual Info: Philips Components Data sheet status P r o d u c t s p e c ific a t io n date of issue A p ril 1991 BDS202/204/78 PN P silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors in a miniature SMD envelope

BDS202

Abstract: bc 7-25 pnp j78 transistor BDS204 BDS78 IEC134
Contextual Info: Philips Components BDS202/204/78 Data sheet status Product specification date of issue April 1991 PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

DSP2420

Contextual Info: TDA7590 Digital signal processing IC for speech and audio applications Features • 24-bit, fixed point, 120 MIPS DSP core ■ Large on-board memory 128KW-24 bit ■ Host access to internal RAM through expansion port ■ Access to external RAM (16Mw) through

TDA7590

Abstract: mozart ADCOM 3A BLH load cell design pure "sine wave" power inverter TQFP144 reel size E-TDA7590 E-TDA7590TR SC11 SC12
Contextual Info: TDA7590 Digital signal processing IC for speech and audio applications Preliminary Data Features • 24-bit, fixed point, 120 MIPS DSP core ■ Large on-board memory 128KW-24 bit ■ Host access to internal RAM through expansion port ■ TQFP144 Access to external RAM (16Mw) through

Contextual Info: COM'L: -15/25 IND: -12/15/25 PALCE16V8Z FAMILY a Advanced Micro Devices Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Zero-Power CMOS technology — 15 nA Standby Current — 12 ns propagation delay for “-12” version

"XOR Gate"

Abstract: 2032E 2128E ispLSI2000-A 74 XOR GATE 2032VE
Contextual Info: 2000E, 2000/A, 2000VE 2000VL and 2000V Family Architectural Description or slow output slew rate to minimize overall output switching noise. Introduction The basic unit of logic for the ispLSI 2000E, 2000/A, 2000VE, 2000VL and 2000V device families is the Generic Logic Block GLB . Figure 1 illustrates the ispLSI

T1693M

Abstract: TL593M TL-694 TL593 ic TL694C TL495 TL493 ST TL493 TL593 tl693
Contextual Info: TEXAS S9S1724 INSTR TEXAS -CLIN /IN TFO IN ST R SS D Ë J ÖTblTEM 0D34t54 <LIN/INTFC 55C 1 |~ 34624 T-5 8-1 1 -3 1 TYPES TL593, TL594, TL595 PULSE-WIDTH-MODULATION CONTROL CIRCUITS LINEAR INTEGRATED CIRCUITS D2712, APRIL 1983-REV1SED DECEMBER 1983 Complete PWM Power Control Circuitry •

Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general

m lc 945

Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

10BASE2

Abstract: 10BASE5 dcuo-0509d PCnet-Family PCI Ethernet Adapter Am79C900
Contextual Info: PRELIMINARY Am79C970 PCnet -PCI Single-Chip Ethernet Controller for PCI Local Bus Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Periph­ eral Component Interconnect PCI local bus ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

BDT61

Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
Contextual Info: BDT61;61A BDT61B;61C _ JV SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose am plifier applications. P-N-P complements are B D T 60, 60A , 60B and 60C. Q U IC K R E F E R E N C E D A T A