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    0032B3 Search Results

    0032B3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase


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    32-pinam28f51228f5lam28f512-75+202s752aqd32bbs PDF

    Contextual Info: Philips Semiconductors b b s a 'm Q D 3 2 fc.3 b 245 M A P X Product specification KMZ10B Magnetic field sensor . N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PIN CONFIGURATION The KMZ10B is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film


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    kmz10bbbs3t31ot195 PDF

    Contextual Info: Data Sheet March 1998 Lucent Technologies Bell Labs Innovations JW050F1-E and JW075F1-E Power Modules: dc-dc Converters; 36 to 75 Vdc Input, 3.3 Vdc Output; 33 W to 50 W Features • Small size: 61.0 mm x 57.9 mm x 12.7 mm 2.40 in. x 2.28 in. x 0.50 in.


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    jw050f1-ejw075f1-egg32b37jw050f-e PDF

    Contextual Info: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current


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    am28f256a32-pin28f256a0d32b3m PDF

    Contextual Info: bb53^31 G032b31 7b3 Ml AP X Philips Sem iconductors Product specification Magnetic field sensor KMZ10A1 N AMER PHILIPS/DISCRETE DESCRIPTION b^E l PIN CONFIGURATION The KMZ10A1 is an extremely sensitive magnetic field sensor, employing the magnetoresistive


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    g032b31kmz10a1b53r310q32b35 PDF

    Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word x 8-bit employing advanced MNOS memory technology and CMOS process


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    hn58s256a32768-wordade-203-69264-byte+3gd32b3fi44tb203dd32b31 PDF

    KMZ10

    Abstract: KMZ10A1 hx 002 magnetic sensor circuit diagram
    Contextual Info: 5 bLi.53^31 Philips Semiconductors G G 32b31 7 b 3 M l AP X Product specification Magnetic field sensor KMZ10A1 N AMER PHI LIP S/DISCRETE DESCRIPTION b 'Î E I PIN CONFIGURATION The KMZ10A1 is an extremely sensitive magnetic field sensor, employing the magnetoresistive


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    gg3eb31kmz10a1bbs3t310032b35+4ot195kmz10hx 002magnetic sensor circuit diagram PDF

    z99300

    Abstract: tv deflection theory 16x16 rgb led matrix Z89302 Z89303 Z89331 Z89300 16x16 LED Matrix driver 64043 v3 CCD matrix
    Contextual Info: P r e l im in a r y P r o d u c t S pec ific a t io n ¿ £ S L O E Z89300 S er ies D ig it a l T e l e v is io n C o n t r o l l e r s FEATURES AND BENEFITS • Advanced TV controller 1C with sophisticated OnScreen Display capability and Integral VBI data


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    40-pin42-pin52-pin16-bit+1240-dip003eflflsz89300z99300tv deflection theory16x16 rgb led matrixz89302z89303z8933116x16 led matrix driver64043 v3ccd matrix PDF

    Contextual Info: TOSHIBA TLCS-47E Series TM P47C103/203 CMOS 4-Bit Microcontroller The 47C103/203 have 8 -bit serial interface based on the TLCS-47E series. TMP47C103N, TMP47C103M, TMP47C203N, TMP47C203M ROM Part No. RAM Package TMP47C103N TMP47C103M 1024 x 8-bit 64 x 4-bit


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    tlcs-47ep47c103/20347c103/203tmp47c103n+3tmp47c103mtmp47c203ntmp47c203m PDF

    b1763

    Abstract: JW075FE jw050f1 1225AJ
    Contextual Info: Data Sheet March 1998 Lucent Technologies Bell Labs Innovations JW050F1-E and JW075F1-E Power Modules: dc-dc Converters; 36 to 75 Vdc Input, 3.3 Vdc Output; 33 W to 50 W Features • Small size: 61.0 mm x 57.9 mm x 12.7 mm 2.40 in. x 2.28 in. x 0.50 in.


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    jw050f1-ejw075f1-ejw075f1jw050f-e+7jw075f-e005002b0032b3b1763jw075fejw050f11225aj PDF