003135 Search Results

HEMT 36 ghz transistor

Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

MAGX-003135-030L00

Contextual Info: MAGX-003135-030L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

Contextual Info: MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 s Pulse, 10% Duty Rev. V2 Features •         GaN on SiC Depletion-Mode HEMT Transistor Common-Source Configuration Broadband Class AB Operation

MAGX-003135-120L00

Abstract: 003135 EAR99
Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Preliminary 28 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

EAR99

Abstract: HEMT 36 ghz transistor
Contextual Info: MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

CY7B9910

Abstract: CY7B9920
Contextual Info: fax id: 3516 CY7B9910 CY7B9920 Low Skew Clock Buffer Block Diagram Description Features • • • • • • • • • Phase Frequency Detector and Filter All outputs skew <100 ps typical 250 max. 15- to 80-MHz output operation Zero input to output delay

Contextual Info: ANALOG DEVICES INC 42E D • OôlbaQD 0D313S3 1 ■ ANA T-5I-07-0I LC2M0S □ AN ALO G D E V IC E S 20-Bit Data Acquisition System AD79024 FEATURES 20-Blt Slgma-Delta ADC Dynamic Range of 105 dB 150 Hz Input ±0.0015% Integral Nonlinearity (150 Hz Input)

ADC84

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N ADC84 ADC85H ADC87H IC ANALOG-TO-DIGITAL CONVERTERS FEATURES • INDUSTRY STANDARD 12-BIT A/D CONVERTERS • THREE TEMPERATURE RANGES: 0°C to +70°C—ADC84 -25°C to +85°C—ADC85H

23C32000

Contextual Info: KM23C32000AG C MOS M a s k R OM ELECTRONICS 32M-BH 4M X 8/2M X 16 CMOS MASK ROM • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time : 120ns (Max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)

DD313

Abstract: BTW 600 BTW39-50 T25-17 BTW39 T-25-17 0031350
Contextual Info: 30E D rz rz • 7*12^37 Q031354 T ■ ^p_2-S- " S G S -T H O M S O N ^ 7# 5 ¡LiCTlíMOígS B T W 3 9 -5 0 -► 1 2 0 0 S G S-TH0MS0N THYRISTORS ■ GLASS PASSIVATED CHIP ■ HIGH STABILITY AND RELIABILITY Thread: 1/4" -28 UNF : type N’ M6 on request : type N" + suffix M

ks57c4004

Abstract: 20h-7Fh fc1h NTE100
Contextual Info: 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C4004 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an A/D converter, LED

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT NEC mP D 4264165, 4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.

CY7C1011-20VC

Contextual Info: CY7C1011 1 2 8 K x 1 6 Static RAM BLE is LOW, then data from I/O pins (l/O 0 through l/0 7), is written into the location specified on the address pins (A 0 through A 16). If byte high enable (BHE) is LOW, then data from I/O pins (l/ 0 8 through l/0 15) is written into the location speci­

RX 3E

Abstract: RX-3E 8 Radio Corporation of America 252B marking LT 5216 1965-REVISED rca RX- 3E sur 288 SRDL oa 1160
Contextual Info: CORPORATION OF A M E R I C A . ELECTRONIC DATA PROCESSING PROCESSORS @ VU incui inumi RADIO REFERENCE MANUAL R A D I O C O R P O R A T I O N 70-35-601 March 1966 OF A M E R I C A The information contained herein is subject to change without notice. Revisions may be

1-487526-4

Abstract: DD313 487769-2
Contextual Info: AMP Catalog 82007 Flexible Film Products Revised 8-96 .1 0 0 [2 .5 4 ] Centerline Single R o w S lim -Lin e Receptacle Housings M ateria l: Black thermoplastic, flame retardant, 9 4V -0 rated .540 [13.72] Plain .098 [2.49] .100 T [2.54] J yp- i r \ * + .047

Contextual Info: S^E » • 02 57 5 2 7 0D313D4 587 IAÎ1D3 ADV MICRO TELECOM P R E L IM IN A R Y A m 7 9 C 0 2 /3 (A ) Adva^ Dual Subscriber Line Audio-Processing Circuit (DSLAC Device) Devices DISTINCTIVE CHARACTERISTICS ■ Software programmable: -SLIC impedance -Trans-hybrid balance

Contextual Info: K M 2 3 C 3 2 12 0 A CMOS M ask ROM ELECTRONICS 32M-BÌt 4M X 8 CMOS MASK ROM GENERAL DESCRIPTION • 4,194,304 x 8 bit organization • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.) Standby : 50 yA (max.)

DD313

Abstract: PS 4206 75-IT 2N2Q 2U06 2K2029 TRANSISTOR D1651 2N2027 2N2029 d0313
Contextual Info: UUU MIL SPECS □□□□125 DD313S2 S MILS M iL - S - 19500/2030 it 14 m Ì967 SUPfcRSEDlM MIL”S-19500/203C 3 March 1370 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTORS, REVERSE BLOCKING, SILICON, TYPES 2N2024, 2N2Q25, 2N2Q27, 2N2029, 2N203Q,

counter lc48

Abstract: DZ 2101 AM79C02 AM79C03 T55B AF-2-A AXGX GD313
Contextual Info: S^E » • 02 57 5 2 7 0D313D4 587 IAÎ1D3 ADV MICRO TELECOM PRELIMINARY A m 7 9 C 0 2 /3 (A ) Adva^ Dual Subscriber Line Audio-Processing Circuit (DSLAC Device) Devices DISTINCTIVE CHARACTERISTICS ■ Software programmable: -SLIC impedance -Trans-hybrid balance

Z3P10

Abstract: ks57c4004 4.19MHz crystal samsung microcontroller ic 7p03 ZDP11 KS57P4004
Contextual Info: KS57P4004MTP ELECTRONICS Mi crocontroll er KS57P4004 MTP The KS57P4004 single-chip CMOS microcontroller is the MTP Multiple Times Programmable version of the KS57C4004 microcontroller. It has an on-chip E 2PROM instead of masked ROM. The KS57P4004 is fully

d0313

Abstract: 2N1778 2n1772 2N1770 2n2619
Contextual Info: 3DE ]> • 7^237 D031354 1 ■ S G S -T H O M S O N Q JIC TM M Û S T '2 5 -IS 2N 1770 2N 1778 2 N 2 6 19 S G S-TH0MS0N THYRISTORS ■ GLASS PASSIVATED CHIP ■ HIGH STABILITY AND RELIABILITY A TO 64 Metal DESC RIPTIO N General purpose SCR suited for power supplies up

Contextual Info: Catalog 82007 Flexible Film Products R e vise d 8-9 6 Flexible Film Contacts, Continuous Strip for Sequential Termination Material and Finish: Phosphor bronze; plated gold duplex or bright tin-lead overall (See chart below.) Cable Thickness— .0 15 [0.38] max.

s57p0

Abstract: KS57C0108 KS57C Samsung P30
Contextual Info: K S 5 7 P 0 10 8 M T P Microcontroller ELECTRONICS KS57P0108 MTP The KS57P0108 single-chip CMOS microcontroller is the MTP Multiple Times Programmable version of the KS57C0108 microcontroller. It has an on-chip E2PROM instead of masked ROM. The KS57P0108 is fully