GD313 Search Results
GD313 Price and Stock
Rochester Electronics LLC NTGD3133PT1HPFET TSOP6 20V 2.3A 145MO |
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NTGD3133PT1H | Bulk | 15,000 | 809 |
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Rochester Electronics LLC NTGD3133PT1GMOSFET 2P-CH 20V 1.6A 6TSOP |
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NTGD3133PT1G | Bulk | 9,000 | 809 |
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Samtec Inc ESQT-123-03-G-D-313CONN SOCKET 46POS 0.079 GOLD PCB |
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ESQT-123-03-G-D-313 | Tube | 12 | 1 |
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ESQT-123-03-G-D-313 |
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ESQT-123-03-G-D-313 | Bulk | 1 |
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onsemi NTGD3133PT1GMOSFET 2P-CH 20V 1.6A 6TSOP |
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NTGD3133PT1G | Reel |
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NTGD3133PT1G | 9,000 | 1 |
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Samtec Inc DW-15-08-G-D-313FLEXIBLE BOARD STACKING HEADER W |
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DW-15-08-G-D-313 | Bulk | 1 |
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GD313 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HM5118165J6Contextual Info: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The H M 5118165 offers |
OCR Scan |
HM5118165 1048576-word 16-bit ADE-203-636B 576-word 16-bit. 42-pin 50-pin ns/60 HM5118165J6 | |
Contextual Info: S^E » • 02 57 5 2 7 0D313D4 587 IAÎ1D3 ADV MICRO TELECOM P R E L IM IN A R Y A m 7 9 C 0 2 /3 (A ) Adva^ Dual Subscriber Line Audio-Processing Circuit (DSLAC Device) Devices DISTINCTIVE CHARACTERISTICS ■ Software programmable: -SLIC impedance -Trans-hybrid balance |
OCR Scan |
0D313D4 Am79C02/3A 096-MHz PL028 PL032 CD040 PD040 PL044 | |
DD313
Abstract: KM718V787-8 KM718V787-9 ZZ3A10 SRAM sheet samsung
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OCR Scan |
KM718V787 128Kx 18-Bit 100-Pin KM718V787) GD313D4 00313DS DD313 KM718V787-8 KM718V787-9 ZZ3A10 SRAM sheet samsung | |
Contextual Info: K M 2 3 C 8 Î OOB G CMOS Mask ROM ELECTRONICS 8M-Bit ( 1 M X 8/512K x 16) CMOS MASK ROM • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(max.) • Supply voltage : single +5V • Current consumption |
OCR Scan |
8/512K 100ns -KM23C8100B 42-DIP-600 KM23C81OOBG 44-SOP-6QO KM23C8100B 576x8bit 288x16bit KM23C8100C) | |
Contextual Info: K M 2 3 C 3 2 12 0 A CMOS M ask ROM ELECTRONICS 32M-BÌt 4M X 8 CMOS MASK ROM GENERAL DESCRIPTION • 4,194,304 x 8 bit organization • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.) Standby : 50 yA (max.) |
OCR Scan |
32M-BÃ 120ns -KM23C32120A 42-DIP-600 KM23C32120A KM23C32120A | |
DD313
Abstract: PS 4206 75-IT 2N2Q 2U06 2K2029 TRANSISTOR D1651 2N2027 2N2029 d0313
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OCR Scan |
DD313S2 MIL-S-19500/2Q3C 2NZ024, 2N2Q25, 2N2027, 2N2029, 2N203Q, l9500. TQ-209AC) DD0012S DD313 PS 4206 75-IT 2N2Q 2U06 2K2029 TRANSISTOR D1651 2N2027 2N2029 d0313 | |
counter lc48
Abstract: DZ 2101 AM79C02 AM79C03 T55B AF-2-A AXGX GD313
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OCR Scan |
0D313D4 Am79C02/3 Am79C02/3A 096-MHz 12-dB PL032 CD040 PD040 06823D PL044 counter lc48 DZ 2101 AM79C02 AM79C03 T55B AF-2-A AXGX GD313 |