00307B Search Results

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3T31 00307b0 bbD * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

am28F020

Abstract: 28F020
Contextual Info: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption

BUK545

Abstract: BUK545-100A BUK545-100B
Contextual Info: N AUER P H I L I P S / D I S C R E T E b'iE J> ^53^31 QD307bS I ME • Product Specification Philips Semiconductors PowerMOS transistor BUK545-100A/B Logic level FET_ _ _ _ GENERAL DESCRIPTION N-channel enhancement mode

583167-3

Contextual Info: Card Edge Connectors Board-to-Board, W ire-to-B oard AM P Catalog 8 2619 Revised 8-96 AMP-LEAF Connectors Product Facts • Contacts on .156 [3.96] centers ■ Glass-tilled polyester, phenolic or diallyl phthalate housings ■ Closed card entry design prevents overstressing of

ECG106

Abstract: ECG1061
Contextual Info: PHILIPS w E C G INC bt.S3 T 2a 17E ECG1061 control signal m a x im u m ITEM Ra t in g s t« = 25°C ELECTRICAL CHARACTERISTICS (To = 25°C) ITEM RATING UNIT V 4 .i 1 + 20, 0 V Ilot Vcc —30V, Rs =1.5101 V r-u + 12. 0 V It Vu u = 9 V Vi - h + 12, 0 V lit

D0307

Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
Contextual Info: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory

AM28F020

Abstract: D0307 28F020 G03G 32ag
Contextual Info: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption

Contextual Info: GEC PLESSEY H I I M H I W M W _A D V A N C E IN F O R M A T IO N DS4163 • 2.9 NWK918 10/100BASE-TX SYMBOL TRANSCEIVER The NWK918 is a Fast EthernetTransceiver with integrated data and clock recovery for combined 10BASE-T and

583545-1

Contextual Info: Card Edge Connectors Board-to-Board, Wire-to-Board AM P Catalog 82619 Revised 8-96 AMP-LEAF Connectors Product Facts • Contacts on .156 [3.96] centers ■ Glass-tilled polyester, phenolic or diallyl phthalate housings ■ Closed card entry design prevents overstressing of

Contextual Info: KA2410 Telephone ELECTRONICS INTRODUCTION The KA2410/KA2411 is a bipolar integrated circuit designed for telephone bell replacement. FUNCTIONS • Two oscillators • Output amplifier • Power supply control circuit FEATURES • • • » • • • •

Contextual Info: Or, Call C ustom Service at 1-800-548-6132 USA Only B U R R -B R O W N - PGA103 PGA103 Programmable Gain AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMABLE GAINS: G=1, 10, 100WV The PGA103 is a programmable-gain amplifier for general purpose applications. Gains o f 1,10, or 100 are

MAV11

Abstract: 5K11 MAV-11 1.5K11
Contextual Info: PHILIPS E C G INC w bt.S3T2a 17E ECG1061 control signal m a x im u m ITEM Ra t i n g s t « = 2 5°C ELECTRICAL CHARACTERISTICS (To = 2 5 °C ) ITEM RATIN G UNIT V 4.i1 + 20, 0 V I lo t Vcg = 3 0 V , R s = 1.5101 V r- u + 12. 0 V It Vu u=9V Vi -h + 12, 0