00307B0 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3T31 00307b0 bbD * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

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Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
Contextual Info: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory

Contextual Info: Or, Call C ustom Service at 1-800-548-6132 USA Only B U R R -B R O W N - PGA103 PGA103 Programmable Gain AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMABLE GAINS: G=1, 10, 100WV The PGA103 is a programmable-gain amplifier for general purpose applications. Gains o f 1,10, or 100 are