002G2 Search Results
002G2 Price and Stock
Anderson Power Products 2002G2Saf-D-Grid Std.receptacle 1.2Mm Panel Rohs Compliant: Yes |Anderson Power Products 2002G2 |
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2002G2 | 2,504 |
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2002G2 |
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Anderson Power Products 2002G2-BKSAF-D-GRID STD.RECEPTACLE 1.2mm PANEL BULK |
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2002G2-BK | 2,504 |
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2002G2-BK |
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Samtec Inc HLS-2002-G-2.100 Screw Machine Socket Array |
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HLS-2002-G-2 |
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HLS-2002-G-2 |
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Samtec Inc HLS-2002-G-22.100 Screw Machine Socket Array |
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HLS-2002-G-22 |
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HLS-2002-G-22 |
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Aratas Corporation B3W-9002-G2CSwitch Tactile N.O. SPST Square Button PC Pins 0.05A 24VDC 2.26N Thru-Hole Box |
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B3W-9002-G2C |
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B3W-9002-G2C | 300 |
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002G2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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LRS13061Contextual Info: SHARP LRS I 3 0 6 1 Contents Part 1 Product Overview 1. D escription . 2 2. Pin C onfiguration . |
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tsop48-p-1014/0aa2028fllfl071fltsop40-1014tcs-rh+3 | |
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Contextual Info: t TO SH IB A UC/UP S i)E D • 0Q2Dlflfl 7T4 « T 0 S 3 TOSHIBA T M P 47C 456A /956A ► CMOS 4-BIT MICROCONTROLLER T w TMP47C456AF I The 47C456A is a high speed and high perform ance 4 -b it single chip m icrocom puter based on th e TLCS-47 CMOS series. The 47C 456A has LCD driver, D TM F g e n e ra to r and large-capacity RAM fo r reperto ry dial, which |
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/956atmp47c456af47c456atlcs-47+4 | |
C-491Contextual Info: International H R ectifier PD959 IRGKIN025M12 "CHOPPER LOW SIDE SWITCH IGBTINT-A-PAK |_ow conduction loss IGBT VŒ = 1200V lc = 25A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail11 losses •Short circuit rated Vce ON <2.7V |
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irgkin025m12c-493100nhc-494+2 | |
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Contextual Info: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM O S Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4 ,1 94 ,3 0 4 x 4 f i t Static C olum n M ode C M O S DRAM s. Static C olum n M ode offers high sp e e d random a cce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2 K Ref. o r 4 K R ef. , acce ss |
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km44c4002akm44c4102a | |
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Contextual Info: blE D m bEMTf l BS ODEOl Tf l TES • H I T 1 MITSUBISHI LSIs MH 1M08B0J-7, -8, -10/ MH1M08B0JA-7, -8, -10 FAST PAGE MODE 1048576-W 0RD BY 8-BIT DYNAMIC RAM MITSUBISHI NEMORY/ASIC D ESCR IPTIO N The MH1M08B0J, JA is 1048576 word x 8 bit dynamic RAM and consists o f eight industry standard 1M x 1 dy |
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1m08b0j-7mh1m08b0ja-7048576-wmh1m08b0j+3 | |
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Contextual Info: M ic r o c h ip PIC16C6X 8-Bit CMOS Microcontrollers Devices included in this data sheet: PIC16C61 • PIC16C64A PIC16C62 • PIC16CR64 PIC16C62A • PIC16C65 PIC16CR62 • PIC16C65A PIC16C63 • PIC16CR65 PIC16CR63 • PIC16C66 PIC16C64 • PIC16C67 • Low-power, high-speed CMOS EPROM/ROM |
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pic16c6xpic16c61pic16c64apic16c62+6 | |
rz-12 relay
Abstract: RZ-12-C CMD 400 Radio Modem 10EZ11 Diode EB 29 EL 4N35 3AD6C
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rc32acm100-pinmd114pd68j/g+10 | |
SM3252
Abstract: sm325 1000BASE-BX PEX8617 intel i7 processor mtbf VPX redi LPC uart block diagram for Intel PCIe SSD SLT3-PAY-2F2U-14 SLT3-PAY-1F1F2U-14
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ivpx7223ddr3-1333256kbytes1000base-bx/kx+11 | |
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Contextual Info: CMOS SyncBiFlFO 256x18x2 and 512x18x2 IDT72605 IDT72615 Integrated Device Technology, Inc. FEATURES: • Two independent FIFO memories for fully bidirectional data transfers • 256 x 18 x 2 organization IDT 72605 • 5 1 2 x 1 8 x 2 organization (IDT 72615) |
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256x18x2512x18x2idt72605idt72615+4 | |
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Contextual Info: ADVANCE I^ IC Z R O N 64K SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT Fast access limes: 4 .5,5,5.5 and 6ns Fast OE# access times: 4.5,4.8,5.5 and 6ns +3.3V +0.3V/ -0.165V power supply Vcc Separate +2.5V +0.4V/-0.125V isolated output buffer |
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160-pin00202bb | |
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Contextual Info: International ^Rectifier Provisional Data Sheet PD -9.1150 IRGKIN150M06 Low conduction loss IGBT "CH O PPER" IG B T INT-A-PAK V Œ = 6 00 V lc = 150A V ce O N < 2 .0 V . Rugged Design »Simple gate-drive .Switching-Loss Rating includes all "tail" losses |
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irgkin150m06c-434 | |
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Contextual Info: O K I Semiconductor MSM51V16805A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE T YPE WITH EDO DESCRIPTION The MSM51V16805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16805A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16805A is |
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msm51v16805a152-word28-pincycles/64 | |
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Contextual Info: O K I Semiconductor MSM5 1 16160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power |
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576-word16-bitmsm5116160a42-pin+1 | |
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Contextual Info: CMOS DRAM KM418C256B 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 262 ,1 4 4 x 18 bit Fast Page M ode CM O S DRA M s. Fast Page M ode o ffe rs high speed random a cce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al |
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km418c256b71l4142dd20251 | |
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Contextual Info: O K I Semiconductor MSM51V17800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17800A is |
OCR Scan |
msm51v17800a152-word28-pincycles/32 | |
B17CContextual Info: CMOS SyncFlFO 512x36,1024x36, 2048 x 36 IDT723631 IDT723641 IDT723651 Integrated D evice Technology, Inc. • Supports clock frequencies up to 67 Mhz • Fast access times of 11 ns • Available in 132-pin plastic quad flat package PQF or space-saving 120-pin thin quad flat package (TQFP) |
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512x361024x36idt723631idt723641+4 | |
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Contextual Info: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time |
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km416c256bkm416v256b256kx16 | |
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Contextual Info: KM48C512B, KM48V512B CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time |
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km48c512bkm48v512b512kx82g213 | |
2253A
Abstract: 2SC3788 2SA1478 sa1478 2SA478 a1478
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2sa1478/2sc37882sa14782sc37883ai47+5 | |
6AL3
Abstract: SHARP LRS LRS13061 WT5 marking code LRS1306
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OCR Scan |
00203mtsop48-p-1014/0aa2028tsop40-1014tcs-rh+7 | |