0027T Search Results

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson — I OPA643 DEMO BOARD AVAILABLE See Appendix A, Burr-Brown 1CData Book— Data Conversion Products Wideband Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • •

Toshiba TC528267J

Abstract: TC528267J 1g17s TC528267 0027T11 D271S W1A01 STO511 TC528267FT
Contextual Info: TOSHIBA SILICON GATE CMOS TC528267 t a r g e t s p e c 262,144WORDS x 8BITS MULTIPORT DRAM DESCRIPTION The TC528267 is a 2M bit CM OS m ultiport m emory equipped w ith a 262,144-w ords by 8-bits dynam ic random access mem ory RAM port and a 512-words by 8-bits static serial access m emory (SA M ) port. The

GP2015 plessey

Abstract: AN4533 bandpass filter for GPS L1 front end GEC Plessey m ds4004 FP48
Contextual Info: 5Ë GEC P L E SS E Y OCTOBER 1996 S L M I l O \ D U C T O K !» DS4374 • 2.4 GP2015 GLOBAL POSITIONING SYSTEM RECEIVER RF FRONT END (Supersedes edition in August 1996 Global Positioning Products Handbook, HB4305- 1. 0 The GP2015 is a small format RF Front-end for Global

ds4004

Abstract: S4056 AN4533
Contextual Info: w t GEC PLESSEY OCTOBER 1996 StMIC.ONUUC.TORS 0 S 4 0 5 6 - 3.4 GP2010 GLOBAL POSITIONING SYSTEM RECEIVER RF FRONT END Supersedes edition in August 1996 Global Positioning Products Handbook, HB4305-1.0 The GP2010 is GEC Plessey Semiconductors’ second generation RFFront-endforGlobal Positioning System (GPS)

photoresistor LDR 1000

Abstract: Photoresistor photoresistor LDR Heimann LT2011 Heimann lt Diode LT 02 Siemens optocoupler IL ldr photocell Photocell LDR
Contextual Info: S I EM EN S A K T I E N G E S E L L S C H A F 47E T> fl23Sb05 4 • SIEG ~ M Ì - S I Opto-couplers Heimann op to-coupler consist of a com bi­ nation of extremely high-intensity light em it­ ting diodes LED as emitters and specific photocell as detectors. Both elements are

Contextual Info: • bfc,S3S31 DDETTbfl 15b H A P X N AMER PHILIPS/DISCRETE JC546 to 548 b'lE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N PN transistors in a plastic TO-92, especially suitable for use in driver stages of audio amplifiers. Q U IC K R E F E R E N C E D A T A

Contextual Info: I , I P D -9.131 OB International 3BR Rectifier IRF3710S/L p r e l im in a r y H E X F E T ^ P ow er M O S F E T • • • • • • Advanced Process Technology Surface Mount IRF3710S Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N t OPA646 DEMO BOARD AVAILABLE See Appendix A, Burr-Brown 1C Data Book— Data Conversion Products Low Power, Wide Bandwidth OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • • • •

Contextual Info: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RA M HITACHI ADE-203-280 A (Z) Preliminary Rev. 0.1 Oct. 20,1995 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N G OPA642 DEMO BOARD AVAILABLE See Appendix A, Burr-Brown 1C Data Book— Data Conversion Products Wideband Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: -95dBc at 5MHz

Contextual Info: N AUER PHILIPS/DISCRETE bTE D bbS3T31 0D57T30 156 H A P X Philips Semiconductors D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e A u g u s t 1990 BSX49 Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO

ATN209

Abstract: ci 7515
Contextual Info: ADV MI CRO TELECOM 5ÖE D 0257557 0 0 2 7 c150 2 r-7 sr-/s- Preliminary a Am2091 Advanced Micro Devices ISDN Echocancellation Circuit (IEC-Q) DISTINCTIVE CHARACTERISTICS • Full duplex data transm ission and reception at the U reference point according to the Layer 1

Contextual Info: Advance Data Sheet September 1996 m i c r o e l e c t r o n i c s group Lucent Technologies Sell Labs Innovations Z80 8-Bit Microprocessor Features Description • CMOS performance: — Z84C0020—dc to 20 MHz The CPUs are fourth-generation enhanced micropro­

bly91a

Contextual Info: PHILIPS INTERNATIONAL MA I N T E N A N C E TYPE MIE D E3 7110fl2b O Q 2 7 c377 S B 3 R H I N JL II BLY91A T '3 3 - 0 7 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

Contextual Info: I I b^E D • bb53T31 DD27^Sb 43H H A P X JA100 JA101 A PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively. QUICK REFERENCE DATA

bsx63

Abstract: BSX62
Contextual Info: 1. • bb-53131 0 D 2 ? m M 712 ■ APX P h ilip s S e m ic o n d u c to rs Data sheet status Preliminary specification date of issue June 1992 BSX62-10, -16/BSX63-10, -16 Silicon planar epitaxial transistors N ANER PHILIPS/DISCRETE bTE D QUICK REFERENCE DATA

BC549 input

Abstract: JC549 JC549B JC549C JC550 JC550B JC550C
Contextual Info: • JC549 JC550 b b S B ^ l 0027^70 QTS W A P X N AUER PHILIPS/DISCRETE bTE ]> ^ SILICON PLANAR EPITAXIALl TRANSISTORS N P N transistors in pla stic T O -9 2 variants, p rim a rily intended fo r low -noise in p u t stages in tape recorders, hi-fi am p lifie rs and other audio-frequency equipm ent.

Contextual Info: P r o d u c t S p e c if ic a t io n < £ S LG E Z86C05/C07 C M OS Z8 8-BIT MICROCONTROLLER FEATURES • The Z86C05/C07 Devices Have the Following General Characteristics: Part Z86C05 Z86C07 ROM 1Kbyte 2 Kbytes RAM 124 Bytes 124 Bytes Speed 8 MHz 12 MHz

Contextual Info: ADV MICRO MEMORY IME D I 055?52ñ □□E?t,fc>Q Am27045 ? Advanced Micro Devices 16,384-Bit 2048 x 8 High-Performance CM OS REGISTERED PROM DISTINCTIVE CHARACTERISTICS • High-speed (20 ns) setup time (10 ns) clock-to-output/Low-Power (90 mA) CMOS EPROM TEchnology

Contextual Info: N AMER PHILIPS/DISCRETE • LIE D bbS3^31 DD27T33 T37 BSX59 to 61 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.

Contextual Info: Advance Data Sheet May 1996 ^ ^ A T S iT Microelectronics Economy Series JC075B-E Power Module: dc-dc Converter; 18 Vdc to 36 Vdc Input; 75 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ High power density ■ High efficiency: 84% typical ■ Low output noise

Contextual Info: microelectronics Data Sheet March 1997 group Lucent Technologies Bell Labs Innovations W2011B 1 GHz Quadrature Modulator Features Description • Guaranteed performance at 2.7 V supply voltage The W2011B 1 GHz Quadrature Modulator is a monolithic integrated circuit that provides direct

uPD72068

Abstract: NEC 596 PD72068 JPD72068 MPD72068 ti42
Contextual Info: N E C m ELECTRONICS INC 30E D' • e b427SaS 0027=150 fi ■ MPD72068 Floppy-Disk Controller N E C E lectronics Inc. T PRELIMINARY - S i - l 3 -6 > l Description Features The /¿PD72068 FDC is one of NEC’s integrated solutions for today’s floppy-disk controller designs. An outgrowth

Contextual Info: A d v a n c e In f o r m a t io n S p e c if ic a t io n < £ 3 L G E Z86C63/64 CMOS Z8 32K ROM M ic r o c o n t r o l l e r FEATURES • 8-Bit CMOS Microcontroller ■ Auto Latches ■ 40-Pin DIP, 44-Pin PLCC, 64-Pin DIP, or 68-Pin PLCC Package ■ RAM and ROM Protect