001FL Search Results

Contextual Info: bSHTfiSR 001fl07fi SOS • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7109A UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION MGF7109A Is a GaAs monolithic microwave integrated circuits for OUTLINE DRAWING Unfcmlllimeters use in 900MHz band power amplifiers. FEATURES

Contextual Info: N ANER PHILIPS/DISCRETE 5SE D 1^53=131 001fl741 Q • BUS21 SERIES T - 3 3-/3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.

BFR90A

Abstract: BFR92A BFT92 A18 transistor
Contextual Info: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;

FU-12AP-N

Abstract: 316AP
Contextual Info: bem fiE T 001fl3Sb MITSUBISHI OPTICAL DEVICES 3T7 FU-12AP-N/FU-316AP APD MODULE FOR LONG WAVELENGTH BAND FEATURES DESCRIPTION FU-12AP-N and containing highly FU-316AP reliable are detector module • High-speed response (fc = 1 G H z ) Ge • Low operating voltage

DG08

Abstract: GS-14-939 19-PIN HDMI CONNECTOR HDMI CONNECTOR vertical hdmi plug spec HDMI Type a all type resister pin in paste 0.75um GS-12-309
Contextual Info: 1 2 PART NUMBER CONTACT AREA PLATING 10078837-001LF 0.75um GOLD 3 4 10078837-001FLF GOLD FLASH A M3X0.5 2X 2.38 10.00 0.63 6.65 A 20.00 23.00 28.10 9.00 (6.48 ) OF DIM. 0.92 B B 0.92 0.90 2X 7.25 0.10 0.10 1.90 5X R0 .4 7.90 S 10.45 11.45 X Z S 14.50 C

2 Wavelength Laser Diode

Abstract: diode S3 S3 diode laser coupler 1.55um 3db
Contextual Info: • 001fl3bs 3TT ■ MITSUBISHI OPTICAL DEVICES FU-52SDM-F1/S1/F3/S3 WDM MODULE WITH SINGLEMODE FIBER PIGTAIL (1.3 pm LD AND 1.55 Mm PD) DESCRIPTION FEATURES WDM module FU-52SDM series incorporate a 1.3um • Incorporate a 1.3|im laser, an InGaAs photodiode

1RFF111

Abstract: a08g IRFF110 IRFF111 IRFF112 IRFF113
Contextual Info: G E SOLID STATE Dl DE D Ë | 3 ô 7 S 0 a i 001flE4ci 3 3875081 G E SOLID STATE 01E 18249 Standard Power M O S F E T s_ IRFF110, IRFF111, IRFF112, IRFF113 T~- $ i ~ ° i D File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode

Contextual Info: 37b6522 001flS32 3=n « P L S B Si GEC P L E S S E Y S E M I C O N D U C T O R S DC2000, DC2500 & DC2600 Series MIC PIN DIODES DESCRIPTION APPLICATIONS PIN Diodes for MICs are available in four formats for direct insertion into microstrip circuits. Suitable for use in MICs.

FU-622SLD

Abstract: fu 024 n FU-622 FU622SLD2M3 b34 diode
Contextual Info: • 001fl3üfl b34 ■ MITSUBISHI OPTICALDEVICES FU-622SLD-2M7/2M3/2M6/2M4 1.48 um PUMP LO MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION FEATURES Mitsubishi’s FU-622SLD series 1480nm laser diode modules are designed as optical pumping sources • Laser Diode specifically optimized fo r pump laser

MPU85-347

Contextual Info: TOSHIBA CUC/UP . WE C • iai7 2 4 1 _ 0 Q ia0 D 1 7 ■ 1 ~ - 5 Z 'J 3 '0 3 TOSHIBA TMP82C255A/TMP82C265A CMOS PROGRAMMABLE PERIPHERAL INTERFACE TMP82C255AN-2 / TMP82C265AF-2 TMP82C255AN-10 / TMP82C265AF-10

NZ70

Abstract: TC511001 TC511001AZ adata a55 diagram 4ao5
Contextual Info: TOSHIBA -CLOGIC/MEMORY} 14E D • i-DTVEMß DOlfiTOS S ■ T -46-23-15 TOSHIBA MOS MEMORY PRODUCTS TC511001AP/AJ/AZ-70, TG511001 AP/AJ/flZ-80 TC511001AP/AJ/AZ-10 DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by

ALS08

Abstract: SN54ALS08 SN54AS08 SN74ALS08 SN74AS08
Contextual Info: SN74ALS08. SN74AS08, SN54ALS08, SN54AS08 QUADRUPLE 2-INPUT POSITIVE-AND GATES D2661, APRIL 1982 - REVISED M A Y 1986 Package Options Include Plastic “ Small Outline" Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs S N 5 4 A L S 0 8 . S N 5 4 A S 0 8 . . . J PACKAGE

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.

MSM5117400

Contextual Info: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.

syncronous

Abstract: KM741006J-10 256kx4 256Kx4 SRAM
Contextual Info: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply

Contextual Info: Thai H E W L E T T mLKM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0520 Features • C ascadable 5 0 Q Gain B lock • High O utput Power: +23 dBm Typical Pj dB at 1.0 GHz • Low D istortion : 33 dBm Typical IP3 at 1.0 GHz

Contextual Info: DS2180A DALLAS SEMICONDUCTOR DS2180A T1 Transceiver FEATURES PIN ASSIG NM ENT • Single chip DS1 rate transceiver TMSYNC [ • Supports common framing standards - 12 frames/superframe “193S” - 24 frames/superframe “193E” 1 w 39 ] RLOS TCLK [ 3 TCHCLK [ 4

Contextual Info: 24LC16B M ic r o c h ip 16K 2.5V I2C Serial EEPROM FEATURES PACKAGE TYPES • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 10 |iA standby current typical at 5.5V - 5 |jA standby current typical at 3.0V

th 2167

Contextual Info: D S 2167 /D S 2168 DALLAS SEMICONDUCTOR D S 2 1 6 7 /D S 2 1 6 8 ADPCM Processor PIN ASSIGNMENT FEATURES - V3T- • Speech compression chip compatible with standard ADPCM algorithms: - - DS2167 supports “new” T1Y1 recommenda­ tions July 1986 and “new” CC1TT G.721 rec­

Contextual Info: H B 5 6 A 1 4 0 S e r ie s 1,048,576-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A140B/SB is a 1M x 40 dynamic RAM module, mounted 10 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A140B/SB is a 72-pin single In-line package. Therefore, the HB56A140B/

Contextual Info: SIE MM^baOB 001ÖÖ57 ISS • H I T 2 D HM5116100 Series Preliminary 16,777,216-Word x 1-Bit Dynamic Random Access Memory ■ H IT A C H I/ d e s c r ip t io n LO G IC/ARR AYS/flEM HM5116100J Senes The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word x

Contextual Info: FUJITSU MICROELECTRONICS 4?E D 374T7Li5 0010017 1 • FHI cP May 1990 Edition 1.0 FUJITSU datasheet: M B81C84A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 64K Words x 4 Bits High-Speed CMOS Static Random Access Memory & The Fujitsu MB81C84A is a 65,536 words x 4 bits static random access memory

Contextual Info: CY74FCT16652T CY74FCT162652T 16-Bit Registered Transceiver Features Functional Description • Low power, pin-compatible replacement for ABT functions • FCT-E speed at 3.8 ns • Power-off disable outputs permits live insertion • Edge-rate control circuitry for significantly improved

Contextual Info: ft A I I A C W A L L A w DS1802 Dual Audio Taper Potentiometer w\ \ h Push-button Control s e m ic o n d u c to r PIN ASSIGNM ENT FEATURES • Ultra-low power consumption GND • Operates from 3V or 5V supplies C ou t CLK • Two digitally controlled, 65-posltion potentiometers