SEP8526
Abstract: sep8526-002 diode honeywell
Contextual Info: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106
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001bb7ssep8526sdp8406/8426sdp8106+5sdp8000/86000dlbb77sdp8426sep8526-002diode honeywell
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DIGITAL GATE EMULATOR USING 8085
Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S
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ami6g16sami6g33sami6g41sami6g70s+16ami6g106sami6g150sami6g202sami6g333ami6g471ami6g603digital gate emulator using 80858086 microprocessor book by a k ray180 nm cmos standard cell library amiic1732dl021m91c360ami 0.6 micron3682dami equivalent gatesic/tda7388 equivalent
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FT5763M
Abstract: FT5763 FT5766M Fujitsu Silicon Darlington Transistor Array T-43-25
Contextual Info: 31E D FUJITSU MICROEL ECT RONICS Q 374=57^2 QQlbb74 b Q F M I January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- FT5763M, FT5766M Silicon Darlington Transistor Array FT 5763M , F T 5766M A B SO LU T E M A X IM U M R A T IN G S Rating Ta = 25°C Storage Temperature
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001bb74ft5763mft5766m374cj7b2+4001bb7st-43-25ft5763fujitsu silicon darlington transistor array
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