0017B23 Search Results

MSM5116180-70

Abstract: MSM5116180-80
Contextual Info: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

TRW catalogue

Contextual Info: MI T S U B I S H I M E M O R Y / A S I C blE D • b S MT ñH S D D 1 7 b l 2 2T1 ■ MITI MITSUBISHI LSIs M S M W ^ y O J . L J P . R T - e . ^ r Ö . - e S r y S . - S S s p jx FAST PAGE MODE 4194304-BIT(262144-WORD BY 16-BIT)DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs,

CSP1084

Abstract: at&t dsp1610 RXQ1 rxq2 005D IS-54 1251 30 34B
Contextual Info: AT&T K ' Ï Ï Ï Ï * ° ata Sh6et Microelectronics CSP1084 Baseband Radio Interface for IS-54 Dual-Mode Cellular Telephone Applications Features Receive path — Decimation and postfiltering to 10 bits — Programmable gain amplifier with 0 dB to 18 dB gain in 2 dB steps

cd 4611

Contextual Info: •â n i a i May ÎÏS r DataSh6et IP Microelectronics CSP1084 Baseband Radio Interface for IS-54 Dual-Mode Cellular Telephone Applications Features Description ■ Receive path — Decimation and postfiltering to 10 bits — Programmable gain amplifier with 0 dB to 18 dB

m51171

Abstract: m32AG M5116
Contextual Info: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

Contextual Info: That mLHM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar TVansistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz