001443B Search Results

Contextual Info: SAM S UN G E L E C T R O N I C S INC b4E » • 7^4142 KMM581020AN GG14454 455 ■ SM6K DRAM MODULES 1 M x 8 DRAM SIMM Memory Module with Low Power GENERAL DESCRIPTION FEATURES • Performance range: KMM581020AN-7 • • • » • • • tiuc tcAc I rc

Contextual Info: PowerMOS transistor_ BUZ72 N AMER PHILIPS/DISCRETE ObE D _ • bb53T31 0014430 7 ■ L r - 3 ^ - 1 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUZ72

Abstract: V103 TRANSISTOR V103 F5101
Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ72 ObE D • ^53^31 ~ 0014430 7 . T - 3*7-1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies