000HOUR Search Results

686 6K tantalum

Abstract: capacitor 684k MATSUO 281 202L3502
Contextual Info: m r SOLID-ELECTROLYTE TANTALUM CAPACITORS* MATSUO A CAUTIONS •This capacitor is polarized, do not apply reverse voltage. •The sum of peak value of AC and DC voltage should not exceed the rated voltage. ■This catalog is designed for providing general information. Please

6SN7

Abstract: 6sn7 tube 6SJ7 6SL7 RCA-5691 rca 6SN7 Triode tube 5692 RCA 5692 tube 6sj7 RCA 5693
Contextual Info: FOR r APPLICATIONS EXTREME \ AND WHERE DEPENDABILITY UNIFORMITY ARE PARAMOUNT. 5691 569 2 5 69 3 TUBE DIVISION RADIO CORPORATION o f AMERICA H A R R I S O N , N. C o p y rig h t, 1 9 4 6 R odio C o rp o fo tio n o l A m er I to TM K M arco R rg ittro d a J.

2N1358

Abstract: pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
Contextual Info: MIL-S-19500/122C >L ojiriUAiiLjL xyoy SUPERSEDING MIL-S-19500/122B 28 Ju ly 1965 M IL IT A R Y S PEC IFIC A T IO N SEM ICONDUCTOR D EV IC E, TRANSISTO R, PN P, GERM ANIUM , HIG H -PO W ER T Y P E 2N1358 This specification is mandatory for use bv a ll Departments

STC 1r0

Abstract: RD14S
Contextual Info: CARBON FILM RESISTORS RD16,14,12,14S, 12S -Kamaya carbon film resistors offer uniform and reliable performance at a very economical cost. Available in a variety o f power ratings, they are the resistor o f choice for most general purpose applications. •

AEC-Q100-012

Abstract: KL30 voltage regulator alternator housing CAR ALTERNATOR REGULATOR ecu alternator voltage regulator 24V alternator load dump KL15 CAR ALTERNATOR REGULATOR 24 volt 3 phase alternator automatic voltage regulator KL15 wire
Contextual Info: Ap pl ica t io n N o te, R e v 1. 0, A ug ust 2 00 9 A p p li c a t i o n N o t e W ha t t h e d e s i g n e r s h o u l d k n o w A p pl i c a t i o n R e qu i r e m e n t s f or S m a r t H i - S id e S w i t c h es B y St é ph an e F r aï s s é A u to m o t i v e P o w e r

SE 442

Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
Contextual Info: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­

2N398A

Abstract: 4510 op Low-Power Germanium PNP transistor 1005 2G
Contextual Info: M IL-S-19500/174B 29 November 1971 SUPERSEDING mtt. -s-195QQ/174A 25 August 1065 » m rP A nv cB P P m n im m M SEMICONDUCTOR DEVICE, TRANSX5TGR, FNP, GERMANIUM, LOW-POWER TYPE 2N398A This specification is mandatory for us« by all D epart­ ments and Agencies oi the Department of Defense.

2N526

Abstract: FSC-5961 2n526 transistor FSC5961
Contextual Info: MIL -S - 19500/60E 19 March 1970 SUPERSEDING MIL-S-19500/60D 28 M arch 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N526 This specification is m andatory for use by all D epart­ m ents and Agencies of the D epartm ent of D efense.

OC 74 germanium transistor

Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Contextual Info: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart­ m ents and Agencies of the Department of Defense.

2N1195

Abstract: pnp germanium transistor TRANSISTOR SUBSTITUTION
Contextual Info: MIL-S-19500/71D 29 June_1067 SU PER SED IN G M IL -S -195 00/71C 17 January 1961 See 6.3 M IL IT A R Y SPEC IFIC A T IO N SEM ICOND UCTO R D E V IC E , TRAN SISTO R, PN P , G ERM AN IU M , LO W -PO W ER T Y P E 2N1135 This specification is mandatory for use by a ll Depart­

transistor C372

Abstract: c372 transistor 138C boonton 91-6c 2N1118 C372 KJT MARKING
Contextual Info: M I L - S -195 0 0 /1 3 8 C i v '• JÌC'^À.TJ _ SU PER SE D IN G M I L - S - 1 9 5 0 0 / 138B 29 M ay 1963 M IL IT A R Y S P E C IF IC A T IO N SEM ICO ND UCTOR D E V IC E , TRA N SISTO R , P N P , SILIC O N , L O W -PO W E R T Y P E 2N 1118 T h is s p e c ific a tio n is m a n d a to ry fo r u se by a ll De p a r tm e n ts an d A g e n c ie s of th e D e p a rtm e n t of D e fe n se .

2N914

Abstract: 307G marking YJ transistors
Contextual Info: MIL-S-19500/373A 10 August 1972 dUi'X.ROC.UU'iU M IL-S-19500/373 USAF 31 May 1967 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR. NPN. SILICON, SWITCHING TYPES 2N914 AND TX2N914 This specification Is approved for use by all D epart­ ments and Agencies of the Departm ent of Defense.

ALUMINUM ELECTROLYTIC CAPACITORS se

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PY L o w Im p edan ce, High R e lia b ility z series S m a lle r • S m a lle r case size th a n PL series • L o w e r im p e d a n c e a t h ig h fr e q u e n c y range. m Low Impedance Anli-Solvent Feature n*n PL • Smaller

electrolytic ELITE

Abstract: electrolytic ELITE ed elite series pz ELITE EB series 50A5 3300 XL 3300 uF 450V 1360 uF 450V 22 J.63 capacitor JIS-C-5101-4
Contextual Info: O No. I O O / \ ' 7 I K 1 Products G uide 7 ,r ; P age 1. C ap acitor S eries Table - 2 2. Precautions in Using Alum inum Electrolytic C apacitors - 4 3. Part N um bering System

2N1025

Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
Contextual Info: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.

MDB Resistor

Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
Contextual Info: MIL-S-195QO/189B 18 January 1972 SUPERSEDING \/TTT —C - l O R n n / I Ö QA 1T11U U X * J \ J \ J \ J lU V iTl 26 A pril 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 in is specification is m andatory for use by all D epart­

transistor kc 2026

Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019
Contextual Info: MIL-S-19500/102A 29 December 1966 ' SUPERSEDING M L -S -19500/102 ÌNAVYÌ 19 July 19 62 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTORS. NPN. SILICON. HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D im a specm caaon is mandatory lor use py au L>eparimenta and Agencies of the Deôartment of Defense,

RD kamaya

Abstract: RD12S RS-296-E Kamaya 931 ke ke 931 kamaya RD RSI3S AMI 52 732 V
Contextual Info: METAL OXIDE FILM RESISTORS RSI 12S, IS, 2S, 3S, 5S lVam aya metal oxide film resistors have a flameproof coating and are extremely stable at high temperatures. They are best suited for circuits requiring stability at high power levels. • FEATURES 1. 1/2 watt th ru 5 w att power ratings available.

2N2553

Abstract: 2N1041 2N2555 2N1039 2N2557 2N2559 2N2559 JAN Germanium power
Contextual Info: M IL -S -19500'89D SU PER SED IN G M I L - S -19500 89C 20 M a rc h 1964 niTTTt*tiAr%\r oriT?ntt? rr*a rp x o j t xr i rAKT ivixijJl SE M IC O N D U C TO R D E V IC E , TRA N SISTOR. P N P , GERM ANIUM , PO W ER T Y P E S 2N 1039. 2N 1041, 2N 2553, 2N2555. 2N2557 AND 2N2559

mmc 4011 E

Abstract: kdt 633 10Q18 photometer BV1010
Contextual Info: ‘*,. ?dIL-s-195m/467 25 January 1672 MIUTARY SEIKICONDUCTQR sPECIFICATIDN DEVICE, DIODE, TYPES JAN1N57S5 TW speculation ~Immt8 and 1. AND JANTXlN3703 LS mandatory &s 1.2 P@lcal 1.S ?daxfmum ent specifbxtton dbmfs!simns. covers by all &par tof Defense. See figure

Contextual Info: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR New! @105C, 2000 hours @Very low ESR @Suitable for Bulk Capacitors for digital equipment ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C Rated Voltage Range Rated Capacitance Range

ILS 404 CB

Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

2N1016B

Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
Contextual Info: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­

on 5295 transistor

Abstract: on 5295 equivalents JANTX2N28 2N2812 2N2814 JAN2N2812 JAN2N2814 transistors substitute JANTX2N2814
Contextual Info: MIL SPECS ï c | 0000125 OOOBSOb T | ~ MIL-S-195Ü0/415 USAF NOTICE 1 9 September 1986 NOTICE I [OF VALIDATION! MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812, AND 2N2814 JAN, AND JANTX MIL-S-19500/415(USAF) Amendment 2, dated 18 April 1973, has been reviewed and