10B10 Search Results

Contextual Info: 10B10 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.3 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25õ

10B10T

Contextual Info: 10B10T Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)50 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.350 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

Contextual Info: HL-LC002H399W-10B10C8 White Description Features Dimension:22mmx18mm×2.80mm The White source color devices are made with GaN on Single color. sapphire White Light Emitting Diode. Emitting Color:White Easy installation with screws. Package:100pcs/white box.

Contextual Info: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 1000 hours @Miniaturized series of FA series ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C Rated Voltage Range Rated Capacitance Range Tolerance on Rated

2R5FP1200M

Abstract: 10FP470M 6FP220MA 6FP390M 4FP330M 4FP560M 4FP820M 6FP220M capacitor 200mF
Contextual Info: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 1000 hours @Higher capacitance and lower ESR @Suitable for the backup capacitor of the power supply circuit of CPU ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C

BW35

Contextual Info: ADVANCE‡ 4 MEG X 8, 4 MEG X 9, 2 MEG X 18, 1 MEG X 36 1.8V VDD, HSTL, DDRIIb4 SRAM 36Mb DDRII CIO SRAM 4-WORD BURST MT57W4MH8J MT57W4MH9J MT57W2MH18J MT57W1MH36J FEATURES • • • • • • • • • • • • • • • Figure 1 165-Ball FBGA

Contextual Info: PRELIMINARY‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement

2N773

Abstract: U6 em BC127 BC199B BFY47 TF252
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb2 SRAM 18Mb DDRII CIO SRAM 2-Word Burst MT57W2MH8B MT57W1MH18B MT57W512H36B FEATURES • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement Pipelined, double-data rate operation

6CS3

Abstract: Infrared Receiver sensor HD6432631 HD6432632 HD6432633 HD64F2633 HD64F2633R 433 transmitter, pcb layout master guide st semiconductor ERN 1387
Contextual Info: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,

Contextual Info: 3714 Kinnear Place Saskatoon, SK Canada S7P 0A6 Ph: 306 373-5505 Fx: (306) 374-2245 www.littelfuse.com/relayscontrols SE-701 MANUAL GROUND-FAULT MONITOR Revision 10-C-072414 Copyright 2014 by Littelfuse Startco All rights reserved. Document Number: PM-1040-EN

rt930H

Abstract: BF229 2N2935 11G702 2N2935 pnp BC127 BC198 10D701 2N701 BFY47
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement

4FB3

Abstract: 4Fb390M
Contextual Info: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 1000 hours @Larger capacitance than FP series @Low ESR same as FP series @For VRM and DC-DC converter ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C Rated Voltage Range

sanyo Solid Capacitor

Contextual Info: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 1000 hrs. @Higher capacitance and lower ESR. @Suitable for the backup capacitor of the power supply circuit of CPU. ?SPECIFICATIONS No. Items Performance requirements 1 Category temperature range

LM3900 VCO

Abstract: 10b2 zener diode zener 10B2 quad comparator LM3900 mixer lm3900 staircase waveform Zener diode 10b3 audio mixer ic lm3900 T1EB 953a pnp
Contextual Info: National Semiconductor Application Note 72 September 1972 PREFACE With all the existing literature on ‘‘how to apply op amps’’ why should another application note be produced on this subject There are two answers to this question 1 the LM3900 operates in quite an unusual manner compared to a conventional op

MCR03J102

Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
Contextual Info: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were

cq 721

Abstract: am26ls31 27LS00 TRANSISTOR SUBSTITUTION Amdasm am2911pc 25S558 STK 025 power amplifier GE semiconductor data handbook am29811adc-b
Contextual Info: í i í i í i n z ta a a a a a a a a a a a r n a a a a a a a a a a a a a i: 33a a a a a a n a a a a a ; a a a a a a a a n a a iia a r r ia a a a a a n a a iia a a r l a n g a s í i í i í i * i¿ w n r w a s a jn sü n n a n a n n n n íiíi íiíiíi n n s n n n

Contextual Info: ADVANCE‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb2 SRAM 18Mb DDRII CIO SRAM 2-Word Burst MT57W2MH8B MT57W1MH18B MT57W512H36B FEATURES • DLL circuitry for wide-output, data valid window, and future frequency scaling • Pipelined, double-data rate operation

Contextual Info: ADVANCE‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb4 SRAM 18Mb DDRII CIO SRAM 4-WORD BURST MT57W2MH8J MT57W1MH18J MT57W512H36J FEATURES • DLL circuitry for wide-output, data valid window, and future frequency scaling • Pipelined double data rate operation

VN01 016 0002 2

Abstract: TN01 016 0011 1 PA66 - GF 25 relay
Contextual Info: Amphenol Amphenol-Tuchel Electronics GmbH heavy|mate Heavy Duty Connectors www.industrial-amphenol.com Note from the CEO Ladies and Gentlemen, For over 75 years Amphenol has enjoyed success as the interconnection technology provider of choice to industry-leading companies around the world. One of our key strategic areas of focus has been and is the Industrial market. Our organization works with

DG11 Transistor

Abstract: fq13 FQ06 Devlin Electronics pin diagram for IC cd 1619 cp dB06 diode FQ11 fQ-17 ML87V2301 FD13
Contextual Info: OKI Semiconductor ML87V2301 FEDL87V2301-01 Issue Date: Jan. 15, 2003 Scan Converter for FPD-TV GENERAL DESCRIPTION The ML87V2301 is an interlace/progressive I/P conversion and resolution conversion IC developed for flat panel displays and CRT television sets.

MT57W1MH18C

Abstract: MT57W2MH8C MT57W512H36C
Contextual Info: ADVANCE‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • DLL circuitry for wide-output, data valid window, and future frequency scaling • Separate independent read and write data ports

Contextual Info: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR @105C, 5000 hours @Long life and high reliability @Suitable for a industrial usage ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C Rated Voltage Range Rated Capacitance Range