000HO Search Results

686 6K tantalum

Abstract: capacitor 684k MATSUO 281 202L3502
Contextual Info: m r SOLID-ELECTROLYTE TANTALUM CAPACITORS* MATSUO A CAUTIONS •This capacitor is polarized, do not apply reverse voltage. •The sum of peak value of AC and DC voltage should not exceed the rated voltage. ■This catalog is designed for providing general information. Please

6SN7

Abstract: 6sn7 tube 6SJ7 6SL7 RCA-5691 rca 6SN7 Triode tube 5692 RCA 5692 tube 6sj7 RCA 5693
Contextual Info: FOR r APPLICATIONS EXTREME \ AND WHERE DEPENDABILITY UNIFORMITY ARE PARAMOUNT. 5691 569 2 5 69 3 TUBE DIVISION RADIO CORPORATION o f AMERICA H A R R I S O N , N. C o p y rig h t, 1 9 4 6 R odio C o rp o fo tio n o l A m er I to TM K M arco R rg ittro d a J.

2N1358

Abstract: pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
Contextual Info: MIL-S-19500/122C >L ojiriUAiiLjL xyoy SUPERSEDING MIL-S-19500/122B 28 Ju ly 1965 M IL IT A R Y S PEC IFIC A T IO N SEM ICONDUCTOR D EV IC E, TRANSISTO R, PN P, GERM ANIUM , HIG H -PO W ER T Y P E 2N1358 This specification is mandatory for use bv a ll Departments

Contextual Info: I n s p i r i n gg r e e np e r f o r ma n c ewi t h S a ms u n gDDR3Me mo r y Hi ghper f or mance,ener gyef f i ci entmemor y Sams ungSemi conduct orEur ope,2009 Dual -andmul t i cor eCPUsf ormul t i t aski ngoper at i ons,64bi toper at i ng syst emsandcomput

STC 1r0

Abstract: RD14S
Contextual Info: CARBON FILM RESISTORS RD16,14,12,14S, 12S -Kamaya carbon film resistors offer uniform and reliable performance at a very economical cost. Available in a variety o f power ratings, they are the resistor o f choice for most general purpose applications. •

AEC-Q100-012

Abstract: KL30 voltage regulator alternator housing CAR ALTERNATOR REGULATOR ecu alternator voltage regulator 24V alternator load dump KL15 CAR ALTERNATOR REGULATOR 24 volt 3 phase alternator automatic voltage regulator KL15 wire
Contextual Info: Ap pl ica t io n N o te, R e v 1. 0, A ug ust 2 00 9 A p p li c a t i o n N o t e W ha t t h e d e s i g n e r s h o u l d k n o w A p pl i c a t i o n R e qu i r e m e n t s f or S m a r t H i - S id e S w i t c h es B y St é ph an e F r aï s s é A u to m o t i v e P o w e r

SE 442

Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
Contextual Info: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­

2N398A

Abstract: 4510 op Low-Power Germanium PNP transistor 1005 2G
Contextual Info: M IL-S-19500/174B 29 November 1971 SUPERSEDING mtt. -s-195QQ/174A 25 August 1065 » m rP A nv cB P P m n im m M SEMICONDUCTOR DEVICE, TRANSX5TGR, FNP, GERMANIUM, LOW-POWER TYPE 2N398A This specification is mandatory for us« by all D epart­ ments and Agencies oi the Department of Defense.

2N526

Abstract: FSC-5961 2n526 transistor FSC5961
Contextual Info: MIL -S - 19500/60E 19 March 1970 SUPERSEDING MIL-S-19500/60D 28 M arch 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N526 This specification is m andatory for use by all D epart­ m ents and Agencies of the D epartm ent of D efense.

OC 74 germanium transistor

Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Contextual Info: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart­ m ents and Agencies of the Department of Defense.

2N1195

Abstract: pnp germanium transistor TRANSISTOR SUBSTITUTION
Contextual Info: MIL-S-19500/71D 29 June_1067 SU PER SED IN G M IL -S -195 00/71C 17 January 1961 See 6.3 M IL IT A R Y SPEC IFIC A T IO N SEM ICOND UCTO R D E V IC E , TRAN SISTO R, PN P , G ERM AN IU M , LO W -PO W ER T Y P E 2N1135 This specification is mandatory for use by a ll Depart­

transistor C372

Abstract: c372 transistor 138C boonton 91-6c 2N1118 C372 KJT MARKING
Contextual Info: M I L - S -195 0 0 /1 3 8 C i v '• JÌC'^À.TJ _ SU PER SE D IN G M I L - S - 1 9 5 0 0 / 138B 29 M ay 1963 M IL IT A R Y S P E C IF IC A T IO N SEM ICO ND UCTOR D E V IC E , TRA N SISTO R , P N P , SILIC O N , L O W -PO W E R T Y P E 2N 1118 T h is s p e c ific a tio n is m a n d a to ry fo r u se by a ll De p a r tm e n ts an d A g e n c ie s of th e D e p a rtm e n t of D e fe n se .

2N914

Abstract: 307G marking YJ transistors
Contextual Info: MIL-S-19500/373A 10 August 1972 dUi'X.ROC.UU'iU M IL-S-19500/373 USAF 31 May 1967 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR. NPN. SILICON, SWITCHING TYPES 2N914 AND TX2N914 This specification Is approved for use by all D epart­ ments and Agencies of the Departm ent of Defense.

LM 3041

Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Contextual Info: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.

electrolytic ELITE

Abstract: electrolytic ELITE ed elite series pz ELITE EB series 50A5 3300 XL 3300 uF 450V 1360 uF 450V 22 J.63 capacitor JIS-C-5101-4
Contextual Info: O No. I O O / \ ' 7 I K 1 Products G uide 7 ,r ; P age 1. C ap acitor S eries Table - 2 2. Precautions in Using Alum inum Electrolytic C apacitors - 4 3. Part N um bering System

2az marking transistor sot-23

Abstract: transistor 431 N 2N2481 foto transistor TX markings on transistor
Contextual Info: M IL-S-19500/268G 25^June 1971. . SliPEHSEDItfG i i» rr tt rr . * / / tr v \ IVllU-O-XOilt m iu *l oo -io u u v /6uoD\i,<AV X/ 1 July 1965 j a ac a q a o a xt a MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON SWITCHING t Y f e S 2 nz 46I An d TX2Nii48i

2N1025

Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
Contextual Info: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.

MDB Resistor

Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
Contextual Info: MIL-S-195QO/189B 18 January 1972 SUPERSEDING \/TTT —C - l O R n n / I Ö QA 1T11U U X * J \ J \ J \ J lU V iTl 26 A pril 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 in is specification is m andatory for use by all D epart­

transistor kc 2026

Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019
Contextual Info: MIL-S-19500/102A 29 December 1966 ' SUPERSEDING M L -S -19500/102 ÌNAVYÌ 19 July 19 62 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTORS. NPN. SILICON. HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D im a specm caaon is mandatory lor use py au L>eparimenta and Agencies of the Deôartment of Defense,

RD kamaya

Abstract: RD12S RS-296-E Kamaya 931 ke ke 931 kamaya RD RSI3S AMI 52 732 V
Contextual Info: METAL OXIDE FILM RESISTORS RSI 12S, IS, 2S, 3S, 5S lVam aya metal oxide film resistors have a flameproof coating and are extremely stable at high temperatures. They are best suited for circuits requiring stability at high power levels. • FEATURES 1. 1/2 watt th ru 5 w att power ratings available.

2N2553

Abstract: 2N1041 2N2555 2N1039 2N2557 2N2559 2N2559 JAN Germanium power
Contextual Info: M IL -S -19500'89D SU PER SED IN G M I L - S -19500 89C 20 M a rc h 1964 niTTTt*tiAr%\r oriT?ntt? rr*a rp x o j t xr i rAKT ivixijJl SE M IC O N D U C TO R D E V IC E , TRA N SISTOR. P N P , GERM ANIUM , PO W ER T Y P E S 2N 1039. 2N 1041, 2N 2553, 2N2555. 2N2557 AND 2N2559

mmc 4011 E

Abstract: kdt 633 10Q18 photometer BV1010
Contextual Info: ‘*,. ?dIL-s-195m/467 25 January 1672 MIUTARY SEIKICONDUCTQR sPECIFICATIDN DEVICE, DIODE, TYPES JAN1N57S5 TW speculation ~Immt8 and 1. AND JANTXlN3703 LS mandatory &s 1.2 P@lcal 1.S ?daxfmum ent specifbxtton dbmfs!simns. covers by all &par tof Defense. See figure

Contextual Info: SOLID ELECTROLYTIC CAPACITORS WITH ORGANIC SEMICONDUCTOR New! @105C, 2000 hours @Very low ESR @Suitable for Bulk Capacitors for digital equipment ?SPECIFICATIONS Items Performance Requirements Category Temperature Range –55 to +105C Rated Voltage Range Rated Capacitance Range

ILS 404 CB

Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.