0003S5 Search Results

Contextual Info: M ill DATA SHEET_ HM 65162 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL : 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2 .0 nW(TYP)

Contextual Info: MICRON TECHNOLOGY INC SSE D • blllSMT DDD3SS4 Dlfl ■ MRN ADVANCE MT5LC2565 64K X 4 SRAM |V |IC = R O N 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE FEATURES • High speed: 15,20,25, and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply

Contextual Info: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01

lambda power supply lk

Abstract: LH0032 EL2006CG SI 3105 A EL2006ACG EL2006AG EL2006G MDP0002 lambda los amp burn-in
Contextual Info: General Description Features T he EL2006/EL2006A are h ig h slew rate, wide bandw idth, hig h in p u t im pedance, high gain and fully differential in p u t opera­ tional am plifiers. T hey exhibit excellent open loop gain charac­ teristics m aking th em suitable for a broad range of high speed

2SK1101-01M

Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01

Contextual Info: fe j bq4832Y BENCHMARQ RTC Module With 32Kx8 NVSRAM Features General Description >• Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a non­ volatile 262,144-bit SRAM organized as 32,768 wards by 8 bits with an

2sk1507

Abstract: 2SK956 2SK1011 2SK1011-01 2SK1012 2SK1016 2SK1082 2SK1217 2SK1916 2SK962
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01

Contextual Info: SUPERTEX INC blE D • 07732*15 G ü ü 3 S n ^ S u p ertex inc. 71D « S T X HV16 8-Channel High Voltage Analog Switch Ordering Information_ Package Options +70V +80V * 28-lead Plastic Chip Carrier ^NN V SIG 24-pin Ceramic Side-brazed DIP*

Contextual Info: Programmable Peripheral PSD312L 3-Volt Single-Chip Microcontroller Peripheral Preliminary Key Features □ Single Chip Programmable Peripheral for Microcontroller-based Applications □ 3.0 to 5.5 Volt Operation □ 19 Individually Configurable I/O pins that can be used as: