MT5LC2565 Search Results

Contextual Info: ADVANCE MT5LC2565 64K x 4 SRAM M IC R O N 64K x 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 15,20,25, and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options

Contextual Info: M IC R D N I MT5LC2565 64K X 4 SRAM SEMICONDUCTOR TIC SRAM 64K x 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/ O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 and 25 • High-performance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply

Contextual Info: MICRON TECHNOLOGY INC SSE D • blllSMT DDD3SS4 Dlfl ■ MRN ADVANCE MT5LC2565 64K X 4 SRAM |V |IC = R O N 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE FEATURES • High speed: 15,20,25, and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply

Contextual Info: JUL i 4 ’«S3 PRELIMINARY MICRON I 64K St MíCOKUlICIOR MC SRAM MODULE X MT8LS6432 32 SRAM MODULE 64Kx 32 SRAM LOW VOLTAGE FEATURES • • • • • • • • High speed: 17,20,25, 30 and 35ns High-performance, low-power CMOS process Single +3.3V ± 0.3V power supply

Contextual Info: PRELIMINARY 64K SRAM MODULE MT8LS6432 32 SRAM MODULE X 64K X 32 SRAM LOW VOLTAGE FEATURES H ig h sp eed : 15, 2 0 a n d 25n s H ig h -p e rfo rm a n ce, lo w -p o w er C M O S p ro cess Sin g le + 3 .3 V ± 0 .3 V p o w er su p p ly 5 V -to lera n t I / O

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

A1526

Abstract: 64K X 4 SRAM
Contextual Info: M T5LC2565 64K X 4 SRAM M IC R O N SRAM 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 1 2 ,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V +0.3V power supply • Easy memory expansion with CE and OE options

Contextual Info: MICRON SEM ICO NDUCTOR INC b'IE D • blll54T □ □□Tia'I 141 H M R N 256K SRAM 1DIE SEMICONDUCTOR, INC- SRAM DIE 256K SRAM 256K X 1, 64K X 4, 32K x 8 FEATURES • • • • DIE OUTLINE Top View Single 5V or 3.3V power supply All I/O pins are 5V tolerant

Contextual Info: PRELIMINARY |V |IC = R O N 64K SRAM MODULE X MT8LS6432 32 SRAM MODULE 64Kx 32 SRAM LOW VOLTAGE PIN ASSIGNMENT Top View H igh speed: 17,20, 25, 30 and 35ns H igh-perform ance, low -pow er CMOS process Single +3.3V ± 0.3V pow er supply 5V-tolerant I /O _

T5LC2565

Contextual Info: MT5LC 2565 64K X 4 SRAM |U |IC R O N SRAM 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE PIN A SSIG N M E N T Top View • All I / O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 and 25 • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply

Contextual Info: PRELIMINARY S12C 256K SR A M D IE MICRON ft- n u —.m¡T. we. SRAM DIE 256K SRAM 2 5 6 K X 1, 6 4 K x 4 , 3 2 K x 8 FEATURES • Single 3.3V ±0.3V power supply 3.3V ±0.2V for 12ns and faster • 5V -tolerantI/0 • Common data inputs and data outputs (separate data

Micron Semiconductor

Contextual Info: MICRON SEMICONDUCTOR INC b? E J> blllSMI M OOEmLfS TbT • MRN M T5LC 2565 64K X 4 SRAM MICRON SRAM 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 , 25 and 35ns • High-perform ance, low-power, CM OS double-m etal

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264