0003G Search Results

Contextual Info: FUJITSU MICROELECTRONICS 7Û 3749762 FUJITSU MICROELECTRONICS D e | 374c17t,a 0003Gb3 □ |' 78C 03063 FUJITSU M OS M em ories • MB85204-10, MB85204-12, MB85204-15 262,144 x 4-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85204 is a fully decoded, 262,144 word X 4-bit

circuit diagram of instrumentation amplifier

Abstract: circuit diagram of instrumentation amplifier with 3626AP 3626CP 3626C
Contextual Info: •: o :• B U R R -B R O W N I b I b Low Drift IN S TR U M E N TA TIO N AMPLIFIER FEATURES • LOW VOLTAGE DRIFT @ LOW GAIN 2mV/°C @ G = 5 3626CP • LOW NOISE - 2vV. p-p • HIGH CMR - > 80(1B @ G = 1000 • LOW COST • SMALL SIZE - DIP Package D E S C R IP TIO N

Contextual Info: 2SK1390 SIPMOS FU JI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications

Contextual Info: r& TO K O TK10650 LOW CURRENT COMPANDOR FEATURES APPLICATIONS I • Low Supply Current ■ Portable Instrumentation ■ Wide Operating Voltage ■ Cordless Telephones ■ Low Standby Current ■ Handy Talkies ■ Microphone Amplifier ■ Interphones | ■ Instantaneous Deviation Control Circuit

EL2232C

Abstract: hp 2232 EL2020 EL2232 EL2232CM EL2232CN MIL-I-45208A m2232
Contextual Info: EL2232C é la n te c HIGHPERFORMANCEANAIÛ6INTEGRATEDCIRCUITS EL2232C SO MHz, Fast SètÜing, Dual Current tvedback Amplifier F eatu res G eneral D escrip • 60 M Hz —3 dB bandwidth, Av = 1 • 50 M Hz —3 dB bandwidth, Av = 2 • 3 mV offset voltage • 10 ju,V/°C Offset D rift

ADM 3053

Abstract: voice transcever circuit diagram 41516 MT8980 PM4341A PM6341 PM6341E1XC PM7345 PSB 2165 H rohm "marking" T32
Contextual Info: PMC-Sierra, Inc. S tandard P roduct I I / 1 ^ ^ P M 6341E 1X C £7 FRAMER/TRANSCEIVER ISSUE 7 FEATURES • Integrates a full-featured E1 transceiver in a single device with analog circuitry fo r receiving and transm itting G.703 2048 kbit/s com patible signals and digital

hydrocarbon sensor

Abstract: OPB826 OPB826S OPB826SD
Contextual Info: g>j OPTEK Product Bulletin OPB826 July 1996 Dual Channel Slotted Optical Switches Types OPB826S, OPB826SD Features Absolute Maximum Ratings Ta = 2 5 ° C u n le s s o th e rw is e noted) • Dual channels over/under Storage and Operating T em pe ratu re. -40°C to +85° C

Contextual Info: ~ [f| C O M PLIANT W ITH PCM CA2.1/JEIDA4.2 j LI PC CARD CONTROLLER RF5C296/RF5C396L/RB5C396/RF5C396 OUTLINE The RF5C296, the RF5C396L, the RB5C396, and the RF5C396 are enhanced version of the RF5C266 and RF5C366, LSIs functioning as controllers for interfacing IC memory cards, modems, and I/O cards, such as HDDs,

Q13A

Abstract: Q11A ICS93V857 ICS95V857 ICSSSTV16859 MLF2
Contextual Info: ICSSSTV16859 Integrated Circuit Systems, Inc. DDR 13-Bit to 26-Bit Registered Buffer Recommended Applications: • DDR Memory Modules • Provides complete DDR DIMM logic solution with ICS93V857 or ICS95V857 • SSTL_2 compatible data registers Q13A Q12A Q11A

on222 transistor

Contextual Info: SEMICONDUCTOR CORPORATION Data Sheet High Performance FX Family Gate Arrays FX Family Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW

Contextual Info: September 1994 ^ É k M ^ ic r o L in e a r PREL M NARY ML6508 Programmable Adaptive Clock Manager PACMan GENERAL DESCRIPTION FEATURES The ML6508 is a Programmable Adaptive Clock Manager which offers an ideal solution for managing high speed synchronous clock distribution in next generation, high

Contextual Info: March 1994 PRELIMINARY ^Ék Micro Linear ML6035 5V Spindle Motor Controller and Driver GENERAL DESCRIPTION FEATURES The ML6035 is a 5 volt brushless motor controller and driver. The circuit provides three phase sensorless commutation and speed control. A digital commutation

Contextual Info: FUJITSU fllCROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS DEi| FU JITSU MOS M em o rie s M B 8 52 01 -12 , M B 8 52 01 -15 1,048,576 X 1-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85201 is a fully decoded, 1,048,576 word x 1-bit

EL2224CN

Abstract: td 232 v8 EL2224 EL2224C EL2224CM MIL-I-45208A QCX0002
Contextual Info: EL2224C é t a n t lA fw EL2224C Dual, 60 MHz, Unity Gain Stable, Operational Amplifier HIGH PERFORMANCE ANALOG BITS ¡HATED CIRCUITS Features • • • • • • • • • U nity gain stable Wide bandwidth— 60 M Hz H igh slew rate— 200 V / is H igh power bandwidth

Contextual Info: SONY CORP/COMPONENT PRODS 4TE D Ô3Û23Ô3 00 0 304 5 ISONY 4 SLU304VR SONY, oS~ 800/700mW High Power Laser Diode with a Detachable Fiber Description Package Outline Unit : mm S L U 3 0 4 V R is a high power laser diode based on the SLD 3 0 4 V with a detachable fiber.

ci 4548

Contextual Info: EPSON PF736-04 _ E0C623E 4-bit Single Chip Microcomputer • Core CPU Architecture • SVD Circuit • Sound Generator I DESCRIPTION The E0C623E is a CMOS single-chip microcomputer composed of the 4-bit core CPU E0C6200A, ROM, RAM, LCD driver, time base counter, stopwatch timer, SVD circuit and sound generator. The E0C623E provides an

Contextual Info: L M A 1 0 1 0 / 2 0 1 0 16 x 16-bit Multiplier-Accumulator DEVICES INCORPORATED FEATURES DESCRIPTION □ 45 ns Multiply-Accumulate Time □ Replaces TRW TMC2210, Cypress CY7C510, IDT 7210L, and AMD Am29510 □ Two's Complement or Unsigned Operands □ Accumulator Performs Preload,

Contextual Info: DIXYS CS 142 Phase Control Thyristors RRM = 1200-1600 V IT RMS = 260 A W v RSM v DSM V RRM V V ^T(RMS) ^T(AV)M ^TSM (di/dt)cr 3 4 CS142-12io8 CS142-16io8 1200 1600 T ,vj, — "^"{vj)m T case = 85°C;’ 180° sine Tease = 75°C; 180“ sine 260 140 164 A

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

2SK series

Abstract: FUJI FA SERIES
Contextual Info: 2SK1102-01M SIPMOS FUJI POWER MOS-FET N-CHANNELSILICON POWER MOS-FET — - - n Tt A r n i r ^ P A P -ll SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power

Contextual Info: ICSSSTV16859 Integrated Circuit Systems, Inc. DDR 13-Bit to 26-Bit Registered Buffer Recommended Applications: • DDR Memory Modules • Provides complete DDR DIMM logic solution with ICS93V857 or ICS95V857 • SSTL_2 compatible data registers Q13A Q12A Q11A

TRANSISTOR BQ20

Abstract: bq2010 cpi 200 w Ku
Contextual Info: BENCHMARQ b q 2 0 1 0 Gas Gauge IC Features General Description >• Conservative and repeatable measurement of available charge in rechargeable batteries T he bq2010 G as G auge IC is intended for battery-pack or in-system in sta lla tio n to m a in ta in an

Contextual Info: & & P S T P T 9 6 9 3 WIDE INPUT VOLTAGE, JFET COMPARATOR SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS Common Mode Range -3.0 to +8.0 V Low Input Bias Current <100 pA Propagation Delay 1.5 ns max Low Offset ±25 mV Low Feedthrough and Crosstalk Differential Latch Control

tt 2232

Abstract: EL2020 EL2232 EL2232CM EL2232CN MIL-I-45208A 40n80 dd03ds
Contextual Info: EL2232C é la n EL2232C te c HIGH PERFORMANCE ANAdOG INTEGRA“^ 60 MHz, Fast Settling. Dual Current back A mplifier " is : General Description Features > ' f a • 60 M H z —3 d B b a n d w id th , Ay = 1 • 50 M H z —3 d B b a n d w id th , Av = 2 • 3 m V o ffset v o ltag e