00030B2 Search Results

Contextual Info: 2SK1390 SIPMOS FU JI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications

ADM 3053

Abstract: voice transcever circuit diagram 41516 MT8980 PM4341A PM6341 PM6341E1XC PM7345 PSB 2165 H rohm "marking" T32
Contextual Info: PMC-Sierra, Inc. S tandard P roduct I I / 1 ^ ^ P M 6341E 1X C £7 FRAMER/TRANSCEIVER ISSUE 7 FEATURES • Integrates a full-featured E1 transceiver in a single device with analog circuitry fo r receiving and transm itting G.703 2048 kbit/s com patible signals and digital

HLP5

Abstract: full adder using x-OR and NAND gate OAI221 OA41 G5108
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Data Sheet High Performance SCFUDCFL Gate Arrays SCFX Family Features • Tailored Specifically for High Performance Telecommunications and Data Communica­ tions Applications. 2.5 GHz Performance. Phase-Locked Loop Megacells Available:

Contextual Info: nixYS DS 9 DSA 9 Rectifier Diodes Avalanche Diodes V RSM ^ B R m in V RRM V V V 900 1300 1700 1900 1300 1750 1950 800 1200 1600 1800 F(RMS) 800 -1800 V 18 A F(AV)M 11 A RRM Standard Avalanche Types Types DS9-08F DS9-12F „ c DO-203 AA „ C DSA 9-12F

2SK125

Abstract: FET 2SK125 y-parameter 2SK125 sony 2sk125 equivalent 2SK12S
Contextual Info: SONY CORP/ COMPONENT PRODS 4TE J> • ñ3flE3ñ3 0003055 7 SONY 2SK125 SO N Y Silicon N-Channel Junction FET Description T ^ J /- 2 S ~ Package Outline Unit: mm The 2SK125 is an N-Channel silicon junction type field effect transistor developed for low-noise