00031S Search Results

LTK829

Abstract: LTK849 E113898 CD 4060 PIN DIAGRAM marking A93 marking A95 LTK-849
Contextual Info: TAIWAN LITON ELECTRONIC LITEm 4TE D WÊ Ô^BSbTS 00031SB SSL ITLIT: High Density Mounting Type Photoeoupler i - T - 4 1 '» 3 LTK829/LTK849 FEATURES Sym m etrical term inal configuration LTK829: 2-channel type LTK849: 4-channel type 2 . High current transfer ratio

Contextual Info: SONY CORP/COMPONENT PRODS 50E D • 03flE3fl3 □ □ □ 3 cm L i T ■ SONY C X B 1 15 9 Q -Y SONY* High-Speed Programmable Delay Line/Duty Cycle Controller 7 1 . ty y _ ^ .y Description The C X B 1159Q -V is an ultra high-speed Programmable Delay Line/Duty Cycle Controller 1C.

ts68483

Abstract: 68483 68000 thomson ddd3 AL S244 Generator/5 PEN PC TECHNOLOGY
Contextual Info: THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68483 ADVANCED GRAPHIC AND ALPHANUMERIC CONTROLLER DESCRIPTION The TS 68483 is an advanced color graphie processor that drastically reduces the CPU software overhead for all gra­ phic tasks in medium and high range graphic applications

A2293

Abstract: 20KX2 2SK2072-01L
Contextual Info: 2SK2072-01 L, S S IP M O S 8 F U JI N-CHANNEL SILICON POWER MOS-FET m o s -f e t pow er FAP-IIA SERIES Outline Drawings • Features • High speed sw itching • Low on-resistance • No secondary breakdow n • Low driving p o w e r • High voltage ir-

Contextual Info: j-f / Surface Mounting Device i - h Rectifier Diode Twin Diode o u t l in e d im e n s io n s DF15VDD Case : STO-22G 600V 15A • S M D S T 0 -2 2 0 • 5 ^ 5 - •BS14[c nSffiifSI4 •ËSJUgÎîfS ffl i i •PFC • S R B iS mmm. o a • a « , fa RATINGS

TK15021

Contextual Info: KJTO KO TK15021 DUAL TWO-INPUT/SINGLE OUTPUT AUDIO ANALOG SWITCH FEATURES I APPLICATIONS Audio Mixers/Effects 0.005% Distortion Low Voltage Operation 3 V Car Stereo High Input-Output Isolation Telecom Less Sensitive to ESD than CMOS Switches Telecommunication Equipment

LTV817C

Contextual Info: • FEATURES 1. C urrent transfer ratio C TR : M IN . 5 0 % at lF = 5m A , V CE = 5V 2. High input-output isolation voltage V ,so: 5 ,0 0 0 Vrm s 3. C om pact dual-in-line package L T V 817: 1-channel type, LTV 827: 2-channel type LT V 847: 4-channel type

Contextual Info: F U J I T S U M I C R O E L E C T R O N I C S 7fl D E | 3 7 ^ 7 k . a 000314ft ft | j - t f C '7 .3 ‘ 1 * Prelim inary FU JITSU M OS M em o ries M B85214-12, M B85214-15 MOS 262,144 X 8-Bit Dynamic Random Access Memory Module Description The Fujitsu MB85214 is a fully decoded, 262,144 word x 8-bit

2SK2080-01

Abstract: N channel Mosfet 15A 500V A2-296 2SK2080
Contextual Info: 2SK2080-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES Outline Drawings I Features • High speed sw itching • Low o n-resistance »No secondary b reakd ow n »Low driving p o w er »High voltage • V GS= ± 3 0 V G uarantee

A2296

Abstract: 2SK2080-01 A2-296 CW20S
Contextual Info: 2SK2080-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P -II S E R IE S Outline Drawings I Features • High speed switching • Low on-resistance »No secondary breakdown »Low driving power »High voltage •V GS= ± 3 0 V Guarantee

2SK2147-01

Contextual Info: 2SK2147-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-n SERIES I Outline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary breakd ow n • Low driving p o w er

TCA 365

Abstract: PCM30 PDH system 178 08T Bipolar IC For Switching Power Supply Contro c22e LOF atm PMC saturn 78P7200 PCM30 PM4341 PM6341
Contextual Info: S tandardProduct I I / IV — PMC-Sierra, Inc. ISSUE 5 PM7345 S/UNI-PDH SATURN User Network Interface forPDH FEATURES Implements the ATM Direct Cell Mapping into DS1, DS3, E1, E3 transmission systems according to ITU-T Draft Recommendation G.804. Implements the Physical Layer Convergence Protocol PLCP for DS1 and DS3

AMP C282

Contextual Info: EPSON _ E0C6274 4 -b it S in g le C h ip \ \ • • • • • M ic r o c o m p u te r Core CPU Architecture Dual Slope Type A/D Converter Reference Voltage Generation Circuit General Purpose Operating Amplifier SVD Circuit • DESCRIPTION

019S

Abstract: HDAC10180 RS-343-A SPT1018 SPT1018B TDC1018
Contextual Info: @ SPT S P T 1 1 8 8-BIT, HIGH SPEED D/A CONVERTER SIGNAL PROCESSINO TECHNOLOGIES FEATURES APPLICATIONS • 275 MWPS Conversion Rate - Version A • 165 MWPS Conversion Rate - Version B • Compatible with TDC1018 and HDAC10180 with Improved Performance • RS-343-A Compatible

Contextual Info: □IXYS VUE 50 Three Phase Rectifier Bridge dAV with Fast Recovery Epitaxial Diodes FRED rr 4/5 6 8 10 VRRM V Type 1200 1200 VUE 50-12N01 Test Conditions Kav Tk = 85°C, module Jpdt L-W- l-w- 200 210 A A VR= 0 t = 1 0 m s (50 Hz), sine t = 8.3 ms (60 Hz), sine

Contextual Info: GOLDSTAR TECHNOLOGY I N C / 4020757 34E D 0003150 & W ËGST PRELIMINARY SPECIFICATION r h v .i GM76C256/L/LL 32,768x8 BIT STATIC RAM _HIGH PERFORMANCE D e s c r ip tio n Q - C o n fig u r a tio n P ii n The GM76C256/L7LL Is a 262,144 bit static random

PFN D

Contextual Info: MICRO POWER SYSTEMS INC 20E D • M b p o w e 0003154 4 ■ vmva /AJ!\ MICRO c L0T7444 vP Compatible Double-Bufferred 16*<Bit DAC r SYSTEMS MP7626 PRELIMINARY FEATURES APPLICATIONS • • • • • • • • • • • • 96 dB Dynamic Range 16 Bit Differential Linearity

DM 0565

Abstract: sony 1S1656 MPC271 DM211 DM-211 2sa844
Contextual Info: SONY CORP/COMPONENT PRODS HTE 0302303 D 0003151 DM-211 SO N Y. Magnetoresistance Element Description 3 «S O N Y Package Outline Unit: mm The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate.