000302B Search Results

adam tech 004

Contextual Info: UNITED TECH P1ELEC CENTE 5flE D • ^343^47 000302b S3? ■ UTI1 Military S tandard P roducts UT71563V Radiation-Hardened 32K x 8 SRAM 3.3-Volt A dvanced D ata S h eet UNITED TECHNOLOGIES MICROELECTRONICS CENTER O ctober 1992 FEATURES INTRODUCTION □ 70ns maximum address access time, LET threshold

71C4400Bj

Contextual Info: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin

Contextual Info: 0 . OPTEK Product Bulletin OPB685 July 1996 Photologic Optical Flag Switch Types OPB685, OPB686, OPB687, OPB688 Features • • • • Photologic® output Four output options Mechanical switch replacement Printed circuit board mounting Description The OPB685 series flag switches consist

Contextual Info: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 m A / 8 0 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version)

ESAB34M-02C

Abstract: Collmer Semiconductor
Contextual Info: ESAB34M-02C 5A • Outline Drawing s o f t r e c o v e r y s u p e r h ig h s p e e d 4.5'MAX. 0.4J | £ .1 TO-220F I Features Connection Diagram Insulated package by fully molding Soft recovery, low noise High reliability I Applications High speed power switching

Contextual Info: ~ [f| C O M PLIANT W ITH PCM CA2.1/JEIDA4.2 j LI PC CARD CONTROLLER RF5C296/RF5C396L/RB5C396/RF5C396 OUTLINE The RF5C296, the RF5C396L, the RB5C396, and the RF5C396 are enhanced version of the RF5C266 and RF5C366, LSIs functioning as controllers for interfacing IC memory cards, modems, and I/O cards, such as HDDs,

100VJ

Abstract: EL2223CN
Contextual Info: EL2223C é la n te EL2223C Dual, 500 MHz High Speed, Operational Amplifier c high Features • W ide gain bandw idth— 500 M H z • H igh slew rate— 350 V/jms • H igh pow er bandw idth ± 10 Vout 5.5 M H z • Large open loop gain 83 dB • Low pow er— 5 m A /am pIifier

on222 transistor

Contextual Info: SEMICONDUCTOR CORPORATION Data Sheet High Performance FX Family Gate Arrays FX Family Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW

Contextual Info: IBM11D4475B IBM11E4475B IBM11D8475B IBM11E8475B 4M/8M x 32 Desktop ECC-on-SIMM Features • 72-Pin JED EC Standard Single-In-Line Memory Module • Performance: • High Performance C M O S process • Single 5V, ± 0 .25 V Power Supply • All inputs & outputs are fully TTL & C M O S

STM-1 Physical interface PHY

Abstract: TCA240 341fh rca 645 PM4341A PM6341 PM7344 PM7345 PUB54016 E1 HDB3
Contextual Info: PMC-Sierra, Inc. • " ISSUE 5 PM7344 S/UNI-MPH SATURN QUAD T1/E1 MULTI-PHY USER NETWORK INTERFACE FEA TU RES • Single chip quad ATM User Network Interface operating at 1.544 Mbit/s or 2.048 Mbit/s. • Implements the ATM Forum User Network Interface Specification V3.1 for DS1

J 13002

Abstract: 10KHZ VA706J VA706K VA706XS 3S400
Contextual Info: 33E D V T C INC • TBSflTST QDD3Q2S b « V T C V A706 HIGH-SPEED, FAST-SETTLING H ll^ iV T C Incorporated PRECISION OPERATIONAL AMPLIFIER FEATURES • Fast Settling Time: ±0.1% In 200ns • High Slew Rate: 42V/ns • Wide Gain Bandwidth: 25MHz • Ease of Use: internally Compensated, Unity Gain

J 13002

Abstract: 55D1 10KHZ VA706J VA706K VA706XS
Contextual Info: 33E D V T C INC • TBSflTST QDD3Q2S b « V T C VA706 HIGH-SPEED, FAST-SETTLING H ll^ iV T C Incorporated PRECISION OPERATIONAL AMPLIFIER FEATURES • Fast Settling Time: ±0.1% In 200ns • High Slew Rate: 42V/ns • Wide Gain Bandwidth: 25MHz • Ease of Use: internally Compensated, Unity Gain

EL2223CM

Abstract: EL2223 EL2223C EL2223CN HA2540 MIL-I-45208A
Contextual Info: EL2223C Features • W ide gain bandw id th— 500 M H z • H igh slew rate— 350 V/jms • H igh pow er bandw idth ± 10 Vout 5.5 M H z • Large open loop gain 83 dB • Low pow er— 5 m A /am plifier • Low in p u t offset— 0.5 m V typ. • W ide supply voltage range

G003G

Abstract: Sony 187
Contextual Info: SONY CORP/CONPONENT P R OD S 4TE D 03ÔE3Ô3 G003G2S *1 I S ONY SLU301XR SONY. 80/70mW High Power Laser Diode with a Detachable Fiber 7^-V / Description SLU301XR is a high-power laser diode based on the SLD301XT with a detachable fiber. Direct coupling to a fiber having an FC