0001B37 Search Results

EDI8F82046C25M6C

Abstract: EDI8F82046C35M6C 3230im
Contextual Info: ^ E D _ EDI8F82046C I ELECTRONIC DESIGNS INC. Commercial Sixteen Megabit SRAM Module 2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout Features The EDI8F82046C is a 16 Mega bit CMOS Static RAM based on four 512Kx8 Static RAMs mounted on a

Contextual Info: 5.0V to 170V SMD TRA N SIEN T VOLTAGE SU P P R ESSO R S D ata Sheet 'emiconductor Mechanical Dim ensions Package |*- 43/ 4.7 Features • 400 WATT PEAK POWER PROTECTION E l e c t r i c a l M a x im u m Peak ■ EX CELLEN T CLAMPING CAPABILITY ■ TYPICAL l„ < loA ABOVE 10V

Contextual Info: A S4L C 16M 4S0 A S4L C 8M 8S0 A S4L C 4M 16S0 H ig h p e r f o r m a n c e 16 M x 4 / 8 M X 8 /4 M X 16 CMOS DRAM A 6 4 M egabit CMOS synchronous DRAM Advance information Features • O rg a n iz a tio n - 4 ,1 9 4 ,3 0 4 w ords X 4 bits X 4 banks 16MX4

C60P30FE

Abstract: C60P40FE
Contextual Info: FAST RECOVERY DIODE 6 6 .6 A /3 0 0 ~ 4 0 0 V /trr:6 0 n s e c C60P30FE C60P40FE FEATU R ES ° Similar to TO-247AC X 2 Case ° Dual Diodes - Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop ° Low Forard Voltage Drop ° High Surge Capability

4422 mosfet

Abstract: MIC4421CT MIC4421BN mic4422aj MIC4421 speed control of d.c. motor MIC4421CN MIC4422 4422 tl494 dc to ac
Contextual Info: M IC 4 4 2 1 /4 4 2 2 9A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features BiCMOS/DMOS Construction Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up. Input Will Withstand Negative Swing of Up to 5V Matched Rise and Fall T im es.25ns

Contextual Info: 8 Megabit CMOS SRAM D E N S E - P A C MICROSYSTEMS DPS1MS8U D E S C R IP T IO N : The DPS1M S8U is a 1Meg X 8 high-density, low-power static RAM module comprised of eight 128K X 8 monolithic SRAM's, an advanced high-speed C M O S decoder and decoupling capacitors surface mounted