0.6 UM CMOS PROCESS Search Results

004II

Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
Contextual Info: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%

TAA 310A

Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

Contextual Info: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min

Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8

CMOS 7

Abstract: 135C F9906-05 CMOS7
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: F9906-05 DATE: Product Affected: 723642Y Product Family: FIFO 723622/23/24/26/32/33/34/36/42/43/44/46Y Manufacturing Location Affected:

0.6 um cmos process

Abstract: 135C
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: F9906-06 DATE: MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: 72V3642Y Product Family: FIFO Product Mark 72V3622/23/24/26/32/33/34/36/42/43/44/46Y

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

Contextual Info: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in

ST74HC541

Abstract: S9226-03 KMPDA0172EE
Contextual Info: CMOS linear image sensors CMOS linear image sensors S9226 series Built-in timing generator and signal processing circuit; 3.3 V single supply operation The S9226 series is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a

G10768

Abstract: 1000 hz cmos Image Sensors
Contextual Info: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses

G10768-1024D

Abstract: E280 capacitive readout circuit G10768
Contextual Info: InGaAs linear image sensor G10768-1024D Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768-1024D is a 1024-channel, high-speed infrared image sensor designed for applications such as medical diagnostic equipment and foreign object screening where a multichannel high-speed line rate is required. The signal processing circuit uses

G10768

Abstract: G10768-1024DB
Contextual Info: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses

Contextual Info: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses CTIA (capacitive transimpedance amplifiers) that allow signal readout while simultaneously integrating signals in all

S10077

Abstract: "a-trig"
Contextual Info: CMOS linear image sensor S10077 Digital output, built-in 8/10-bit A/D converter, single power supply operation The S10077 is a CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with excellent input/output characteristics. The circuit also includes a 8-bit/10-bit A/D converter.

Contextual Info: CMOS linear image sensors S8377/S8378 series Built-in timing generator and signal processing circuit; 5 V single supply operation The S8377/S8378 series is a family of CMOS linear image sensors designed for image input applications. These linear image sensors operate from 5 V single supply with only start and clock pulse inputs, making them easy to use. The signal processing circuit has a charge amplifier with excellent input/output characteristics and allows signal readout at 500 kHz.

MAX77100

Abstract: IC74 IC-74
Contextual Info: SANYO SEMICONDUCTOR CORP 53E TW OTb T> 0010S31 037 « T S A J r- H4>~ 0 7 — 0 7 MLC74HC76M No.3628 f CMOS High-Speed Standard Logic Dual J-K Flip-Flop with Reset and Set F e a tu re s • The MLC74HC76M consists of 2 identical J-K type flip-flops. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS-TTL 74LS76

Contextual Info: v m VOLTAGE DETECTOR WITH OUTPUT DELAY m RN5VD SERIES •OUTLINE The RN5VD Series are voltage detector ICs with output delay functions and high detector threshold accuracy and ultra-low supply current by CMOS process, which can be operated at an extremely low volt­

Contextual Info: IC D M VFM STEP-UP DC/DC CONVERTER CONTROLLER R N 5 R Y x x 1 S E R IE S •OUTLINE The RN5RYX X 1 Series are VFM Control ICs for step - up D C /D C converter w ith a n external driver tra n s is­ tor featu rin g high o u tp u t voltage accuracy and low supply c u rre n t by CMOS process. The R N 5R Y X X I Series

OV2640

Abstract: RGB565 GRB422 OV2640 Camera UXGA OV2640 vl9a OV02640-VL9A camerachip Sccb omnivision* sxga
Contextual Info: OV2640 Color CMOS UXGA 2.0 Megapixel Cam eraC General Description_ The OV2640 C a m e r a C h ip is a low voltage CMOS image sensor that provides the full functionality of a single-chip UXGA (1632x1232) camera and image processor in a small

Optimized CMOS-SOI Process for High Performance RF Switches

Contextual Info: Optimized CMOS-SOI Process for High Performance RF Switches A. B. Joshi, S. Lee, Y. Y. Chen, and T. Y. Lee Skyworks Solutions, Inc., Irvine, CA Email: aniruddha.joshi@ieee.org ABSTRACT In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in

IMI6000

Abstract: IMI6080 IMI6140 IMI6170 IMI6270 IMI6330 IMI6430 IMI6620 IM16140
Contextual Info: • ■ ■ ■ ■ PRODUCT FEATURES P R O D U C T D E S C R IP T IO N 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metalization Fully autoroutable 820 to 6200 2-input NAND equivalents The IMI6000 family of gate arrays from International