0.5-100MHZ 30DB Search Results

CTM-6062NL

Contextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Insertion Loss: A Return Loss: 9 0.3-1MHz: -1.1 1-65MHz:-0.8 65-100MHz:-1.0 100-125MHz: -1.2 0.5-40MHz: -18 40-100MHz: -[12-20LOG f/80MHz ] 0.3-100MHz: -[22-20LOG (f/100MHz)] 0.3-100MHz: -30dB Min 0.3-100MHz: -35dB Min PRI: SEC=1CT:1CT ±2%

DFC1595B44A

Abstract: DFC1606R25A DFC2491K10A dfc1575b40ac DFC1575C20A DFC1575D02A 72MHZ DFC2492G40A DFC1575V20AA
Contextual Info: EBä&SQik Hffi3?Ö37 £E Specifications (Characteristics Part Number DFC1575B40AC Center Band Insertion Frequency Width Loss (MHz) (MHz) (dB) 1575.42 ±20.0 £ 2 .0 Ripple (dB) £ 0.5 VSWR Attenuation Dimension Pole (BW) (dB) (mm) Type £ 2 .0 £ 1 0 (fo +100MHz)

Contextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Turn Ratio: OCL: Insertion Loss: Return Loss: A B Crosstalk: CMR: Isolation: Housing: Contacts: Leads: Shield: Durability: C 8 9 1:1 ±3% 350uH min 1-100MHz= -1.1dB max 0.5-30MHz=-18db min 40MHz=-15.5dB min 50MHz=-13.6dB min 60-80MHz=-12dB min

Contextual Info: R1005300L 5MHZ TO 100MHZ 30DB REVERSE HYBRID LOW CURRENT Package: SOT-115J Features • Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under All Terminations

Contextual Info: R1005300L R1005300L 30dB Reverse Hybrid 5MHz to 100MHz Low Current Package: SOT-115J The R1005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides

Contextual Info: DBM-188 DBM-188 Very High Level +30dBm Intercept Point Double Balanced Mixer 0.5MHz to 450MHz Package: Flatpack DBM-188 is a miniature double balanced mixer that offers superior signal handling capability, typically better than +30dBm intercept point with only +20dBm LO power. Midband isolations are typically better than

RFSW8000

Abstract: RFSW8000TR7 block diagram diagram of wifi wireless router RFSW8000-412
Contextual Info: RFSW8000 RFSW8000 2.5V TO 5.0V, 5MHz TO 6500MHz 2.5V TO 5.0V, 5MHz TO 6500MHz 10W SPDT SWITCH Package: QFN, 2mm x 2mm x 0.55mm RF1 1 8 VRF1 GND 2 7 RFC GND 3 6 GND RF2 4 5 VRF2 Features  Single Voltage: 2.5V to 5.0V  40dBm P1dB  30dB Isolation at 2GHz

Contextual Info: RFSW8000 RFSW8000 2.5V TO 5.0V, 5MHz TO 6500MHz 2.5V TO 5.0V, 5MHz TO 6500MHz 10W SPDT SWITCH Package: QFN, 2mm x 2mm x 0.55mm RF1 1 8 VRF1 GND 2 7 RFC GND 3 6 GND RF2 4 5 VRF2 Features  Single Voltage: 2.5V to 5.0V  40dBm P1dB  30dB Isolation at 2GHz

Contextual Info: RFSW8000 RFSW8000 2.5V TO 5.0V, 5MHz TO 6500MHz 2.5V TO 5.0V, 5MHz TO 6500MHz 10W SPDT SWITCH Package: QFN, 2mm x 2mm x 0.55mm RF1 1 8 VRF1 GND 2 7 RFC GND 3 6 GND RF2 4 5 VRF2 Features  Single Voltage: 2.5V to 5.0V  40dBm P1dB  30dB Isolation at 2GHz

MEA8020

Abstract: ACB1608 EPC17 BOBBIN ZCYS51R5-M3PA TCXO 9.9 MHZ CST063 QVC10 NLU160805 tdk Isolators ACL2520
Contextual Info: SM Components at a Glance Product name Type or Series Part No. Multilayer Ceramic Chip Capacitors C1005 [EIA CC0402] W T 1 0.5 0.55 max. Class I 0.5 to 330pF Class II 220 to 100000pF 1.6 0.8 0.9 max. Class I 0.5 to 1000pF Class II 220pF to 1jiF 2 1.25 1.45 max.

high Power Amplifier 100mhz

Abstract: CRBAMP-100-6000 Amplifier 1.7 2Ghz
Contextual Info: RedBox Model: CRBAMP-100-6000 AMPLIFIER 100MHz to 6.0GHz Crystek continues to enhance its product portfolio with the release of the RedBox Amplifier. Crystek’s model CRBAMP-100-6000 is a low-noise general purpose connectorized amplifier covering a frequency range of

lm311 OP-AMP

Abstract: lm833 equivalent OF TL084 OPAMP lm336 sot23 mc1458 quad SO23-5 TL082 opamp buffer op-amp tl084 SO23-5 package TS555
Contextual Info: Standard linear portfolio From innovative devices to application specific products Selection guide As part of ST’s ongoing commitment to minimize the environmental impact of its activities, ST has begun to produce Pb-free packages under the ECOPACK name. This table summarizes ST’s

OF TL084 OPAMP

Abstract: audio Amp. mosfet 1000 watt 3000 Watt BTL Audio Amplifier AUDIO AMPLIFIER 140 WATT MOSFET 24v 5 amp smps TDA2320A replacement DC MOTOR DRIVE WITH LM324 NE555 IGBT DRIVER TSM1001 lm336 sot23
Contextual Info: Standard linear portfolio From innovative devices to application specific products Package Flip chip DFN8 Mini SO8 SO8 S014/16 SO20 SO24 batwing SOT23-3/5 TO92 TQFP44/48 TSSOP8 TSSOP14/16 TSSOP28 Tape width mm Qty/reel (min.order qty) Lead-free available

GSC3302

Abstract: soshin
Contextual Info: Control No. : GSC-03302-A Established on May 27, 2011 Product Information 1. 2000MHz Band 30dB Chip Directional Coupler 1.1 TYPE No. : GSC3302-30M2000 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 5.0 0.4 1 0.4 2 1.5 2

RX-2 -G

Abstract: sis 630 11 CT lan Transformer RX-2 YCL isolation PT166415 PT166436 PT166435 RX116
Contextual Info: Home Run Analog Front end Module Design for using with SIS 630/540 YCL ♦ Designed to meet Home PNA Specification 1.0. ♦ Internal high voltage circuit. ♦ Implement voice home network service on service wire. ♦ 30dB EMI performance. ♦ Designed for use with SIS 630/540 .

Contextual Info: B O WEI Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN 31 Gain dB Features Range:20~250MHz ●High Gain:30dB(Typical) ●Low Noise :2.0dB(Typical) ●High Efficiency: 20dBm /45mA(Typical) ●Standard Hermetic Package ●Operating Temperature Range:-55℃～+85℃

Contextual Info: HA RR IS SEflICOND S E CT OR im J MGE D 4302271 0032314 1 !HAS HARRIS High-Frequency N -P-N Transistor Array August 1991 Features Description • Galn-Bandwtdth Product f x . >1GHz • Power Gain .30dB (Typ) at 100MHz

16ST6149B

Contextual Info: 10/100 BASE-T ETHERNET ISOLATION TRANSFORMER P/N:16ST6149B DATA SHEET A.GENERAL SPECIFICATIONS: 1.16 PIN, SMD PACKAGE WITH COMMON CHOKE TO MEET 100 MB /S SPECIFICATION. 2.LOW LEAKAGE INDUCTANCE AND WINDING CAPACITANCES FOR FAST RISE TIME. 3.MORE ECONMICAL THAN DISCRETE TRANSFORMERS.

z144

Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

HP-343A

Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

BA501

Abstract: P35-4210 P35-4210-0
Contextual Info: - MA R C O N I MTL S LTD 25 D • 37bflSQl □□□□□55 3 ■G M L p ^ E S S E Y t - $ / - / / Three Five Product information 'i i/o " 1 GaAs M M IC RF Switch P35-4210 2GHz S P D T/S P S T Applications • RF Switch to 1000M H z in T05 package 2 0 0 0 MHz in chip form

Contextual Info: TS652  DIFFERENTIAL VARIABLE GAIN AMPLIFIER . . . . LOW NOISE : 4.6nV/√Hz LOW DISTORTION HIGH SLEW-RATE : 90V/µs WIDE BANDWIDTH : 52MHz @-3dB & 18dB gain GAIN PROGRAMMABLE from -9dB to +30dB with 3dB STEPS POWER-DOWN FUNCTION D SO14 Plastic Micropackage

z144

Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Contextual Info: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

GC4 diode

Abstract: TS652 TS652ID
Contextual Info: TS652 DIFFERENTIAL VARIABLE GAIN AMPLIFIER • LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52MHz @ -3dB & 18dB gain ■ GAIN PROGRAMMABLE from -9dB to +30dB with 3dB STEPS ■ POWER DOWN FUNCTION D SO-14 Plastic Micropackage