0.1 J 250 Search Results

ptc bk 250 600

Abstract: thermistor ptc 284 ptc 0550 LT 5210
Contextual Info: HALOGEN 60 Volt DC Radial Leaded, PolyTron PTC Devices Pb HF FREE PolyTron™ PTR060V Series Agency Information • cURus: Recognized Card: File E343021 Ihold 0.1-3.75A • TUV File: J 50194729 Part Number System/Ordering PT R 060V 0160 -TR PolyTron™ PTC Device Series

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Po (W) J 1 Type Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min CSB1426P 20 20 5 0.75 3 0.1 CSB1426Q 20 20 5 0.75 3 CSB1426R 20 20 5 0.75 MPS751

VHF-UHF Band Low Noise Amplifier

Abstract: ic power 22E
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4394 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. U n i t i n mm . Low Noise Figure, High Gain. 2.1 ± 0.1 . NF=l.ldB, I S21e |J= lldB f=lGHz 1.25 ±0.1 . I' MAXIMUM RATINGS (Ta=25°C) 2 CHARACTERISTIC SYMBOL Collector-Base Voltage

ERA-01

Abstract: ERA-04TB mmic amplifier code E5 WW107 MMIC era ERA-1SM
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz ERA ERA-SM all specifications at 25°C low power, up to +13.5 dBm output GAIN , dB Typical J MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* FREQ. GHz MODELu NO. 0.1 fL - fU 1 over frequency, GHz 2 3

2SC5103

Abstract: 2SC5103F5
Contextual Info: 2SC5103F5 h 7 > s 7 > $ / Transistors 2S C 5103F5 NPN b 7 > V *$ Epitaxial Planar NPN Silicon Transistor "J y^/High Switching Speed • ^ "iS @ /D im en sio n s U nit: mm • # * tf=0.1 us (Typ.) (lc=3A ) 2) VcE(sat)=.0.15V (Typ.) (IC/lB=3A/0.15A) 3) SOA

TLC271

Abstract: TLC271 equivalent
Contextual Info: TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS D 3 1 3 7 , N O V E M B E R 1 9 8 7 - R E V IS E D J U N E 1991 D, JG, OR P PAC KAGE Input Offset Voltage Drift. .Typically 0.1 |iV/Month, Including the First 30 Days u TOP VIEW

Contextual Info: EL2003C/EL2033C a f s M t a I- r,». B T Tb^ U Îb  M A N C k AULPS r pEC CB% J ITi S EL2003C/EL2033C 1 0W0 A f f f y VW îlt lUpCfUl T i n p T Ïïïw p t t A IflKMA A i l K C l / l * C /Ci F eatu res G eneral D escrip tion • Differential gain 0.1%

JUMPER-0805

Abstract: eia marking code
Contextual Info: Thick Film Chip Resistors NRC Series FEATURES 1/16 0.063 W 25V 50V NRC06 0603 1/10 (0.10) W 50V 100V NRC10 NRC12 0805 1/8 (0.125) W 1206 1/4 (0.25) W 150V 200V 300V 400V NRC25 1210 1/3 (0.33) W 200V 400V NRC50 2010 3/4 (.75) W 200V 400V NRC100 2512 1W 250V

10M15

Abstract: 2SC109A 2SC108A 10Q04 2SA504 2SA594 cd 40240 2SC504 2SC505 2SC507
Contextual Info: Powered TO-39 Application 0.75 40-240 45 *5 40-240 200 0.6 300 0.6 60 *6 30-300 2 80 *6 30—240 2 50 0.6 40-240 2 50 0.8 40-240 2 70 0.8 40-240 SW Time TYP. V CE •c f fc1MHz VCB tori tstg tf MHz (V) (A) (pF) (V) (its) (jus) (jus) 1 250 20 10m 2.8 10 0.1

406j transistor

Abstract: 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE STC is one o f few remaining manufacturers o f NPN and PNP power transistors and Darlingtons. We maintain QML status on over 135 bipolar power transistor and

HP16091

Contextual Info: 48 LLIOOWH Series ¡¡faW ta^CW plnductw s « « x -y 7 -T s ? 9 ? TYPE LL1005-FH Series Inductance Range: 1 .0 -4 7nH E-12 Temperature Coefficient o f L: +250ppm/°C, typical • d im e n s io n s Length (mm) Width (mm) Thickness (mm) Electrode width A (mm)

RUTTONSHA all diodes

Abstract: R1600B RUTTONSHA 12 FM 120 all diodes RUTTONSHA POWER DIODE RUTTONSHA diodes RUTTONSHA diode RUTTONSHA diode 12 fm 40 200AB R1600 DO200AB
Contextual Info: Ruttonsha International Rectifier Ltd. STANDARD RECOVERY DIODES RUTTONSHA High Power Diode Hockey Puk Version R1600 B.C Series Types : R1600PB 04 to R1600PB 25 R1600PB B - PUK FEATURES ❖ Wide current range ❖ High voltage ratings up to 2500 V ❖ High surge current capabilities

2SA1582

Abstract: sanyo 2033
Contextual Info: ; Ordering number: EN 2505 2SA1582/2SC4113 PN P/ NPN Epitaxial Planar Silicon Transistors SAiYOl Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance (Ri = 2.2kfl,R2= °°)

AP95N25W

Contextual Info: AP95N25W RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Lower On-resistance ▼ High Speed Switching BVDSS 250V RDS ON 55mΩ ID G 50A S Description AP95N25 from APEC provide the designer with the best combination of fast

IRHYS63234CM

Abstract: IRHYS67234CM
Contextual Info: PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22Ω ID 12A IRHYS63234CM 300K Rads (Si) 12A 0.22Ω International Rectifier’s R6 TM technology provides

marking code SS SOT23

Abstract: SS MARKING sot23 AP2311GN A2 SOT-23 mosfet
Contextual Info: AP2311GN RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline BVDSS -60V RDS ON 250mΩ ID ▼ Surface Mount Device - 1.8A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the

mosfet ftr 03

Abstract: 2SK2711 SC-75A mosfet 2sk* to-92 oc sc-62 mosfet
Contextual Info: Transistors Switching 250V, 16A 2SK2711 •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. , 5 + o .a 4 . 5 - 0 ., 10.0+23 2) High-speed switching. „+0.2 •8—0.1 3) W ide SOA (safe operating area). 4) G a te-so urce v o lta g e g u ara ntee d

2SC4685

Contextual Info: TOSHIBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm MEDIUM PO W ER AM PLIFIER APPLICATIONS. ¿3.1 ±0.1 5.8 • High DC Current Gain : hF E l = 800-3200 (V c e =2V, IC = 0.5A) : hjrE( 2) = 250 (Min.) (V ce = 2V, Ic = 4A)

Contextual Info: PD - 94296A IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

TIP50G

Abstract: tip50 TIP47G TIP48G TIP5 TIP47 TIP48 TIP49 TIP49G
Contextual Info: TIP47G, TIP48G, TIP50G High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. http://onsemi.com Features • • • • 250 V to 400 V Min − VCEO(sus)

TIP102

Abstract: Bipolar Transistor TRANSISTOR Tip101-Tip106 1N5825 MSD6100 TIP100 TIP101 TIP105 TIP106 TIP107
Contextual Info: MOTOROLA Order this document by TIP100/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc

2SK2460N

Abstract: mosfet ftr 03 251C SC-75A mosfet 2sk* to-92
Contextual Info: Transistors Switching 250V, 5A 2SK2460N •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low on-resistance. 2) -, +0.3 High-speed switching. 3 - 0.1 e+0.3 *—0.1 3) Wide SOA (safe operating area). Ö+0.2 4) Gate-source voltage guaranteed at V gss = ± 3 0 V .

Contextual Info: IRFR214, IRFU214 S e m iconductor Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are

2N6387

Abstract: 2N6388 1N5825 2N6387G 2N6388G MSD6100
Contextual Info: 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium−Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc