0-30V POWER Search Results

Contextual Info: FU JI 2SK2249-01L,S N-channel MOS-FET F-lll Series 30V 10A 35W > Outline Drawing > Features - 0 ,0 6 0 High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier

Contextual Info: ACT4303 Active-Semi Rev 0, 05-Dec-11 30V/3A Sensorless CC/CV Step-Down DC/DC Converter FEATURES APPLICATIONS • • • • • • • • • • • 32V Input Voltage Surge 30V Steady State Input Voltage Up to 3A Output Current Output Voltage up to 12V

Contextual Info: FU JI 2SK2256-01 N-channel MOS-FET FAP-IIA Series 250V 18A 80W > Outline Drawing > Features - 0 ,1 8 0 High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: FU JI aiLöEiruöüe 2SK2806-01 N-channel MOS-FET FAP-IIIB Series 30V > Features - 0 ,0 2 Q 35A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier

Contextual Info: SPECIFICATIONS OUTPUT MODE CH1 CH2 Voltage 0 ~ 30V Current 0 ~ 3A Tracking Series Voltage 0 ~ 60V Tracking Parallel Current 0 ~ 6A CH3 3 ~ 6V 1A Fixed CH4 8 ~15V 1A Fixed - CONSTANT VOLTAGE OPERATION CH1, CH2 Line Regulation: ≤0.01% + 3mV Load Regulation: ≤0.01% + 3mV (rating current ≤3A)

2sk2689-01mr

Abstract: B25A
Contextual Info: FUJI tS T O Q Q E 2SK2689-01 MR N-channel MOS-FET FAP-IIIB Series 30V > Features - 0 ,0 I Q 50A 40W Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier

NDT452AP

Contextual Info: June 1996 National Semiconductor" NDT452AP P-Channel Enhancement Mode Field Effect Transistor Features General Description • -5A, -30V. RDS 0N1 = 0 .0 650 @ VGS = -10V RDS(0N1 = 0.1 n @ V GS = -4.5 V. These P-Channel enhancement mode power field effect transistors are produced using National's

GC 72 smd diode

Abstract: smd code marking gC SOT-23 smd marking gc diode bad sot23 smd 1p sot-23 smd diode marking 1P MARKING tAN SOT-23 diode
Contextual Info: PD - 9.1413C International I R Rectifier IRLMS5703 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vqss = *30V R D S (o n ) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: STB80NE03L-06 N - CHANNEL 30V - 0.005Î2 - 80A - D^PAK STripFET POWER MOSFET TYPE S TB 80N E 03L-06 V R D S o n Id < 0 .0 0 6 Q. 80 A dss 30 V . • TYPICAL RDS(on) =0.005 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED . LOW GATE CHARGE 100 °C

manual de transistores

Abstract: transformador corriente de 110 a 24 volts pico amp meter manual circuitos integrados voltimetro electronics technician troubleshooting manual transformador 1A transformador de voltaje transistores transformador 120v a 24 v
Contextual Info: INSTRUCTION MANUAL MANUAL DE INSTRUCCIÓN MODELS 1710A and 1730A MODELOS 1710A & 1730A 0-30V DC POWER SUPPLY 0-1A 1710A 0-3A (1730A) FUENTE DE PODER DE DC TEST INSTRUMENT SAFETY WARNING Normal use of test equipment exposes you to a certain amount of danger from electrical shock because testing must sometimes be

Supersot6

Abstract: ld32a NDC651N 55sc
Contextual Info: National • Semiconductor" March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description ■ 3.2A, 30V. Ft,*, , = 0.09£1 @ VGS = 4.5V R d sio n i = 0 .0 6 0 @ VGS = 10V. These N-Channel logic level enhancement mode

Contextual Info: STB22NE03L N - CHANNEL 30V - 0.034£2 - 22A TO-263 _ STripFET POWER MOSFET P R ELIM IN ARY DATA TYPE STB22N E03L V dss RDS on Id 30 V < 0 .0 5 Q. 22 A . . . . . TYPICAL R D S (on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STD25NE03L N - CHANNEL 30V - 0.019 f ì - 25A - TO-251/TO-252 STripFET POWER MOSFET TYP E V dss R dS oii Id STD25NE03L 30 V < 0 .0 2 5 Q. 25 A . TYPICAL RDS(on) =0.019 £2 100% AVALANCHE TESTED . LOW GATE CHARGE . APPLICATION ORIENTED CHARACTERIZATION

Contextual Info: International IQR Rectifier pd-mwo > preliminary IRL6903S HEXFET Power M O SFET • Logic-Levei Gate Drive • Advanced Process Technology • Surface Mount • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -30V R D S on = 0 .0 1 1Q Id = -91 A

STD45NF03L

Abstract: TRANSISTOR mosfet k2
Contextual Info: STD45NF03L N -CHANNEL 30V -0.011 £2- 45A DPAK _STripFET POWER MOSFET PRELIMINARY DATA TYP E V dss R dS oii Id STD45NF03L 30 V < 0 .0 1 3 Q. 45 A . TYPICAL RDS(on) =0.011 £2 . LOW THRESHOLD DRIVE . ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

2SK2639-01

Contextual Info: F U J I ü^iUMarü^uis 2SK2639-01 N-channel MOS-FET 450V 0,65Q 10A 1 0 0 W FAP-IIS Series > Features - Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated

d2s diode series

Abstract: diode d2s 2SK2687-01
Contextual Info: F U JI S ü J M s u 'I j ö D E 2 S K 2 6 8 7 -0 1 N-channel MOS-FET FAP-IIIB Series 30V > Features 0 ,0 1 1 2 50A 60W > Outline Drawing - High Current - Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control

Contextual Info: STD40NE03L N - CHANNEL 30V - 0.012 Q. - 40A TO-252 STripFET POWER MOSFET TYP E V dss R dS oii Id STD40NE03L 30 V < 0 .0 1 6 Q. 40 A . . . . . TYPICAL R D S (on) = 0.012 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

Contextual Info: STS7NF30L N - CHANNEL 30V - 0.021 £2 - 7A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss STS7N F30L 30 V R d S oii < 0 .0 2 5 Id a 7 A TYPICAL RDS(on) = 0.021 £2 . STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY . LOW THRESHOLD DRIVE

a170 VS

Abstract: E10 varistor
Contextual Info: m STRONTIUM • TITANATE RING VARISTOR FEATURES * ffl ^ M S Conductor cermaic i s made of titaniu m oxide and strontium. Used in the range of low vo ltage Ei o =3 30V. S E 10=3 30V, * Ä W * fe # M 1 0 ~ 1 5 n F , Wide capacitance (10~150nF), absorb the noise in a wide f r e ­

Contextual Info: STN4NE03L N - CHANNEL 30V - 0.037^ - 4A - SOT-223 STripFET POWER MOSFET TYP E V S TN 4N E03L dss 30 V R D S o n Id < 0 .0 5 Q. 4 A . TYPICAL Ros(on) =0.037 £2 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED

Contextual Info: STS5DNE30L N - CHANNEL 30V - 0.039ft - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5DN E30L V dss R dS oii Id 30 V < 0 .0 4 5 a 5 A • TYPICAL R D S (on) = 0.039 . STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY . LOW THRESHOLD DRIVE

ISO 8015

Abstract: KF 520 2SK2688-01 US50A
Contextual Info: FUJI 2SK2688-01 L,S N-channel MOS-FET 30V 0,0 IQ 5 0 A 6 0 W FAP-IIIB Series > Features Outline Drawing - High Current - Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated T-PACK L T-PACK S 105 4.5 Ü -JL2. _08. > Applications -

Contextual Info: FU JI a iL H E ir iK â J E 2SK2688-01 L,S N-channel MOS-FET FAP-IIIB Series 30V > Features - 0 ,0 1 & 50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier