"SILICON CARBIDE" FET Search Results

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

Contextual Info: PRELIMINARY PRODUCT BRIEF Subject to change LX1780 SiC Enhancement Mode Silicon Carbide JFET and Bipolar Transistors Driver DESCRIPTION The LX1780 is an extremely fast-switching Gate driver IC for driving normally-off silicon carbide JFET switches. It replaces

electrolytic capacitor, .1uF

Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

SIT Static Induction Transistor

Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M
Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

Contextual Info: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of

J294

Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W
Contextual Info: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of

CMF20120D

Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode

Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

0150SC-1250M

Contextual Info: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of

electrolytic capacitor, .1uF

Abstract: z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor 0150SC-1250M
Contextual Info: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of

electrolytic capacitor, .1uF

Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
Contextual Info: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of

static induction transistor SIT

Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR
Contextual Info: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

1000uf electrolytic capacitor

Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
Contextual Info: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: Part Number: Integra IGN4450M50 TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent Thermal Stability  Gold Metal IGN4450M50 is an internally pre-matched, gallium nitride GaN high electron mobility transistor (HEMT). This part is designed for

Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: Part Number: Integra IGN5459M40 Preliminary TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN5459M40 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for

DMOSFET

Abstract: CMF10120 CMF10120D CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D 3E27 ferroxcube tx Cree SiC MOSFET
Contextual Info: CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 160 mΩ N-Channel Enhancement Mode Qg Features • • • • • • Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive

Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

CGHV96050F2

Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison