"RAD" SRAM Search Results

BU-63825

Contextual Info: www.ddc-web.com MIL-STD-1553 Terminals for Space Applications: MODEL:BU-63825 925 and BU-63705 FEATURES: BU-63825(925): BU-63705: • Drop-in Replacement for BU-61582 (83) • Drop-in Replacement for BU-65142 • Rad Tolerant & Rad Hard Versions* • Rad Tolerant & Rad Hard Versions*

Atmel 652

Abstract: AT65609EHV AT65609EHV-DJ40SR Atmel+652
Contextual Info: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)

Contextual Info: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)

212A625

Contextual Info: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through

Contextual Info: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through

HR2000

Abstract: HR2010 HR2065 HR2090 HR2210 HR2125 HR2340 "rad" sram
Contextual Info: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

Contextual Info: 3 HS-65647RH Radiation Hardened December1992 8K x 8 SOS CMOS Static RAM Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD SI - Transient Upset >1 x 1011 RAD (Siys - Single Event Upset < 1 x 10'12 Errors/Bit-Day

207K AW

Contextual Info: Honeywell HR2000 RICMOS " GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm RICMOS IV Bulk Process Total Dose Hardness of >1x106 rad S i02 Dose Rate Upset Hardnes >1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

ERC32SC

Abstract: 4-bit even parity checker circuit diagram circuit diagram of wireless door lock system sparc v7 circuit diagram of wireless door lock system sin Trap floating point ERC32 TSC695F erc32 trap
Contextual Info: TSC695F Rad-Hard Rad-Hard 32-bit SPARC SPARC 32-bit Embedded Processor Processor Embedded User’s Manual Rev.F - 22 March, 2001 1 TSC695F User’s Manual Information Foreword Atmel Nantes S.A. reserves the right to make changes in the products or specifications contained in this document

TSC695E

Abstract: ERC32SC
Contextual Info: TSC695E Rad-Hard Rad-Hard 32-bit SPARC SPARC 32-bit Embedded Processor Processor Embedded User’s Manual Rev.E - September 2000 1 TSC695E User’s Manual Information Foreword Atmel Nantes S.A. reserves the right to make changes in the products or specifications contained in this document

HR2065

Abstract: HR2090 HR2010 HR2125 HR2210 HR2340 HR2000
Contextual Info: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

ed19 smd diode

Contextual Info: SMJ320C6701-SP www.ti.com SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR Check for Samples: SMJ320C6701-SP FEATURES 1 • • • • 23456 • • • • • 1 2 3 4 5 6 Rad-Tolerant: 100-kRad Si TID

Contextual Info: SMJ320C6701-SP www.ti.com SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR Check for Samples: SMJ320C6701-SP FEATURES 1 • • • • 23456 • • • • • 1 2 3 4 5 6 Rad-Tolerant: 100-kRad Si TID

ed12 smd diode

Abstract: smd parts nomenclature tutorial ed13 smd diode ed28 smd diode ed19 smd diode 1-Aug-2008 EA7 SMD Code
Contextual Info: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661

DIODE SMD t4

Contextual Info: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661

ed18 smd diode

Abstract: ed15 smd diode ed22 smd diode ED31 smd ed12 smd diode
Contextual Info: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661

honeywell memory sram

Abstract: 419B3E
Contextual Info: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec

Contextual Info: HS-65647RH Semiconductor Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10"12 Errors/Bit-Day

HS1-65647RH

Abstract: HS1-65647RH-8 HS1-65647RH-Q HS-65647RH HS9-65647RH HS9-65647RH-8 HS9-65647RH-Q HS9A-65647RH-Q
Contextual Info: HS-65647RH Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functional Diagram • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day

Contextual Info: SMJ320C6701-SP www.ti.com SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR Check for Samples: SMJ320C6701-SP FEATURES 1 • • • • 23456 • • • • • 1 2 3 4 5 6 Rad-Tolerant: 100-kRad Si TID

ed15 smd diode

Abstract: smd code EA2 MCBG004
Contextual Info: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661

ed15 smd diode

Abstract: ed13 smd diode ed19 smd diode ed18 smd diode ed22 smd diode SMD ED11 diode ed28 smd diode ed27 smd diode ed31 smd diode ed23 smd diode
Contextual Info: SMJ320C6701-SP www.ti.com . SGUS030E – APRIL 2000 – REVISED JULY 2009 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR

ed15 smd diode

Abstract: ed12 smd diode ed19 smd diode EA7 SMD Code ed28 smd diode ed13 smd diode
Contextual Info: SMJ320C6701-SP www.ti.com. SGUS030D – APRIL 2000 – REVISED MARCH 2009 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR

sem ad 222m

Contextual Info: HS-65647RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functionai Diagram - Total Dose 3 x 10s RAD Si m Al R OW - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10'12 Errors/Bit-Day