"AT COMMAND" SAMSUNG Search Results

ATO Solution nand flash

Contextual Info: K9S5608V0B/A K9S2808V0B/A K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing - If reset command FFh is written at Ready state, the device goes

377H

Contextual Info: HANBit HFDOM40S6Rxxx 40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

Contextual Info: HANBit HFDOM40S3Vxxx 40Pin Flash Disk Module Min.16MB ~ Max.384MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

flash disk

Abstract: SEC130
Contextual Info: HANBit HFDOM44S6Rxxx 44Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

Contextual Info: HANBit HFDOM44S6Vxxx 44Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

Contextual Info: HANBit HFDOM44S3Vxxx 44Pin Flash Disk Module Min.16MB ~ Max.384MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S3Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

Contextual Info: HANBit HFDOM40S3Rxxx 40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

2Gbyte NAND flash

Contextual Info: HANBit HFDOM40S6Vxxx 40Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

Contextual Info: HANBit HFDOM44S3Rxxx 44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S3Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

K4D623237A-QC70

Contextual Info: 64M DDR SDRAM K4D623237A 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and without DLL Revision 1.2 February 2001 Samsung Electronics reserves the right to change products or specification without notice.

qualcomm nand

Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
Contextual Info: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4N56163QF

Contextual Info: Date : April 8 , 2005 Application Application Note Note Clock frequency change sequence Product : K4N56163QF Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup Hwasung-City, Kyungki-Do, Korea R.O.K

K4D62323HA

Contextual Info: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.0 August 2000 Samsung Electronics reserves the right to change products or specification without notice. - 1 -

MCP 67 MV- A2

Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
Contextual Info: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

DINA 6

Contextual Info: DDP 512Mb x8 DDR SDRAM DDR SDRAM Specification Version 0.0 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as

Contextual Info: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.1 February 2001 Samsung Electronics reserves the right to change products or specification without notice.

K4D55323

Abstract: K4D55323QF X321
Contextual Info: Date : March 18 , 2005 Application Application Note Note Clock frequency change sequence Product : K4J55323QF/K4D55323QF Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup

KM432D2131TQ-G0

Abstract: KM432D2131TQ-G6 KM432D2131TQ-G7 KM432D2131TQ-G8 1328G
Contextual Info: Target 64M DDR SGRAM KM432D2131 64Mbit DDR SGRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe Revision 0.3 May 1999 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: DEVICE OPERATIONS CMOS SDRAM SDRAM Device Operations * Samsung Electronics reserves the right to change products or specification without notice. ELECTRONICS DEVICE OPERATIONS CMOS SDRAM A. MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with MRS

KM432D5131TQ-G7

Abstract: KM432D5131TQ-G8 KM432D5131TQ-G0
Contextual Info: 16M DDR SGRAM KM432D5131 16Mbit DDR SGRAM 128K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe Revision 1.1 December 1998 Samsung Electronics reserves the right to change products or specification without notice.

DA65

Abstract: K4D263238M-QC40 K4D263238 K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
Contextual Info: Target 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 0.3 June 2000 Samsung Electronics reserves the right to change products or specification without notice.

153-FBGA

Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
Contextual Info: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

bc4 bl4 bl8 otf

Abstract: srt 8n TI ddr3 controller "DDR3 SDRAM" TI ddr3 controller datasheet T145
Contextual Info: DDR3 SDRAM Device Operation DDR3 SDRAM DDR3 SDRAM Specification Device Operation & Timing Diagram February 2009 revision 0.63 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

SAMSUNG MCP

Abstract: 1g nand mcp KBE00S003M-D411 KBE00S003M Flash MCp nand DRAM 107-ball MCP NOR FLASH SDRAM samsung "nor flash" sensing MCP MEMORY UtRAM Density MCP 1Gb nand 512mb dram 130
Contextual Info: KBE00S003M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,