ZZ 160 ITT Search Results

E 102H transistor

Abstract: 2SC 3205 TRANSISTOR 2Sc 3205 ML100 SOP32 525mil CE-70
Contextual Info: I Ordering number : EN3K4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC33864 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized

Contextual Info: HM62D3232 Series 32768-word x 32-bit Synchronous Fast Static RAM with Burst Counter and Pipelined Data Output HITACHI ADE-203-491A Z Rev. 1.0 Jun. 24, 1996 Features • • • • • • • • • • • • • • Single 3.3 Y power supply (LYTTL)

N4990

Abstract: mz52 zener N4987 100S 1N4954 1N4996 IMZ5891 MZ5210 MZ5240 MZ5806
Contextual Info: ITTIHÌM 1 N 4 9 5 4 - 1N4996 M Z5806 - IMZ5891, MZ5210 - M Z5240 Microsemi Corp. 5-WATT GLASS ZENER DIODES FEATURES • • • • • • • M icrom iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded.

MC9RS08KA2 serial communications

Abstract: MC9RS08KA2 MC9RS08KA2 serial communication c code DEMO9RS08KA2 AN3317 RS08 RS08 c code example freescale spc
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3317 Rev. 0, 10/2006 IIC Master on the MC9RS08KA2 by: Inga Harris East Kilbride, Scotland 1 Introduction The IIC inter-integrated circuit protocol is a 2-wire serial communication interface implemented in

VM VTC 24-lead

Contextual Info: VM 71110 ^ ¿ ê é V T C In c. 4, 6, 8 OR 10-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER FE A T U R E S CO N N ECTIO N DIAGRAMS Va/ue the C ustom er August, 1995 • High Performance - Read Gain = 200 or 300 V/V - Input Noise = 0.5nV/VHz Typical

in5349b

Abstract: IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
Contextual Info: ITTIMK-J 1N5333B Microsemi Corp. 1N5388B th ru SILICON 5 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT C A P A B IL IT Y • AVAILABLE IN ± 5, ± 10 or ± 2 0 % TOLERANCES Note 1 MAXIMUM RATINGS O perating T em perature: —65°C to + 2 0 0 °C

AC050

Abstract: NEC C141 c141 nec st c049 PB6310 123Ln AC044 ga01 AC041 C102 M 346
Contextual Info: N E C ELECTRONICS INC "?5 SEC DÌJ bME7SSS 000fi233 t. J"' T-42-11-13 //P B 6 3 0 0 100K S E R IES BIPO LA R E C L -2 GATE ARRAYS NEC Electronics Inc. M arch 1985 Revision 1 Description ¿fPB6301 Specifications_ T h e //PB6300 (100K) se rie s c o n sists of three ultrah igh -sp e e d E C L gate arrays, com patible with an E C L 10 0 K interface. Respectively, the ¿/PB6301, //PB6310,

Contextual Info: Ordering number : EN6086 CMOS 1C LC75884E, LC75884W 1/4 Duty LCD Display Drivers with Key Input Function H H Overview Package Dimensions T he L C 75884E and L C 75884W are 1/4 duty LC D display unit: mm drivers that can directly drive up to 220 segments and can

Contextual Info: r Z 7 S G S -T H O M S O N ^ 7 # 5MŒ HHi TT!FM0©S BD135 B D137-BD139 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD135, BD137, BD139 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-126 plastic package, designed for audio amplifiers and drivers

m50740

Abstract: MELPS 740 "SERIES MELPS 740" SERIES MELPS 740 SOFTWARE USERS MANUAL M50734SP SERIES MELPS 740 USERS MANUAL m37450 SERIES MELPS 740 M50741 M50740A-XXXSP
Contextual Info: FOREWORD This software manual is for users of the MELPS 740 series. Register structure, addressing mode and instructions are introduced in each section. The enhanced instruction set with enhanced data and memory operations enable efficient programming. Please refer to the “USER'S MANUAL”

IN2621

Abstract: IN4773 1N2621A Zener C212 IN4772 IN4773A IN537 1n764a 1N29B 1N2169A
Contextual Info: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.

Transistor C 1279

Abstract: 2SC1279 2SC127 C1279 MA177
Contextual Info: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2S C 127 9 D The 2SC 1279 is designed fo r use high voltage switching ap­ plication. FEATURES • High Breakdown Voltage 2 B V cbo : 180 V ABSOLUTE M AXIM U M RATINGS Maximum Temperatures Storage Tem perature. -5 5 to +125 °C

transistors BC 543

Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Contextual Info: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA TO DE § ÌCH7E5D DDltD7M 7 f~ <D I S C R E T E / O P T O 90D SEMICONDUCTOR 16074 U T - 3 3 -35' TOSHIBA GTR MODULE M G 7 5 M 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.

16108 fp

Abstract: HA16107FP 16108 HA16108FP ha16107p HA16107F equivalent for ic ha16107p
Contextual Info: HA16107FP/P, HA16108FP/P 600kHz PWM Switching Regulator Controller Description HA16107P, HA16108P The HA 16107 and HA 16108 series are prim ary control sw itching regulator control IC ’s appropriate for d i­ rectly obtaining stable voltage from com m ercial and

SP0256-AL2

Abstract: SPO256 SPR016 gg2j Radio Shack spr016 sp0256al2 tandy spr016 SP0256 sound phase checker SPO-256
Contextual Info: r a ï b a c k D oc. # 17517 Catalog Number 276-1784 TECHNICAL DATA AN EXCLUSIVE RADIO SHACK SERVICE TO THE EXPERIMENTER SP0256 NARRATO R SPEECH PROCESSOR Features Tim • • * • * * • RÔM D VDD C 7 S&Y c 6 DS^C 9 w c ■0 A7 c I Stfl OUT c 12 AÔC l ì

VM7200

Contextual Info: V T C Inc. Value the Customer VM7200 2, 4, 6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER TWO/THREE TERMINAL & SERVO PREAMPLIFIERS July, 1993 FEATURES • High Performance - Read Gain = 200 V /V Typical - Input Noise = 0.75nV/VHz max - Head Inductance Range = 0.2 -1 0 |j H

LTE-3375

Contextual Info: - I I T P r à l^ l Ll 1 k1 GaAlAs T-l 3/4 STANDARD 5 <p HIGHSPEED INFRARED EMITTING DIODE LTE-3375/LTE-3376 FEATURE • LTE-3376 IrDA C om p atiable • Special for high current and low forw ard voltage •H igh power •A va ilable for pulse operating

Contextual Info: HITACHI 2SC4905-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 1. Emitter

DE-150

Abstract: z diode 14a
Contextual Info: 2849995 DIRECTED ENERGY I NC ~~T7 97D 00006 D eT| 20 4=1^5 □□□ODOfc, 3 J “ DE-150 SERIES □ DATA SHEET DIRECTED ENERGY, INC. DE-150 10IN14 SPECIFICATIONS PULSED POWER COMPONENTS AND SYSTEMS The Centre for Advanced Technology 2301 Research Blvd., Suile 101

BM11129

Abstract: TMP95CW64 TMP95PW64 TMP95PW64F toshiba psram
Contextual Info: TOSHIBA TOSHIBA O riginal CMOS 16-Bit M icro co n tro ller TLCS-900/H Series TMP95PW64 TO SHIBA CORPORATION Preface T h an k you very much fo r m aking use o f Toshiba m icrocom puter LSIs. Before use this LSI, refer th e s e c tio n ," Points o f N o te and Restrictions".

mosfet 2sk

Abstract: 2SK962-01 SC-65 T151 nycor 2sk mosfet
Contextual Info: 2SK962-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II • Features S E R I E S lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS= ± 3 0V Guarantee • Avalanche-proof

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50VSJ-2 HIGH-SPEED SWITCHING USE FS50VSJ-02 OUTLINE DRAWING Dimensions in mm .4.5 . 1.3 • 4V DRIVE • VDSS . •100V • rDS ON (MAX) .

27l diode

Contextual Info: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER FEATURES PS2802-1 PS2802-4 DESCRIPTION PS2802-1 and PS2802-4 are optically coupled isolators con­ taining a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor in a plastic SOP Small