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CE-70 Datasheets (32)

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NCEPOWER

Part	Manufacturer	Description	Datasheet Type	PDF
NCE70T680	NCEPOWER	NCE70T680D, NCE70T680, NCE70T680F are 700V N-channel super junction power MOSFETs with 680 mΩ RDS(ON), 7A continuous drain current, low gate charge, and avalanche tested, suitable for PFC, SMPS, and industrial power applications.	Original	PDF
NCE70T260K	NCEPOWER	NCE70T260I, NCE70T260K are 700V N-channel super junction power MOSFETs in TO-251 and TO-252 packages, featuring 220 mΩ typical RDS(ON), 15A continuous drain current, ultra-low gate charge, and advanced trench gate technology for high-efficiency power conversion applications.	Original	PDF
NCE70H10F	NCEPOWER	NCE70H10F is an N-Channel Enhancement Mode Power MOSFET with 70V drain-source voltage, 100A continuous drain current, and low RDS(ON) of 4.8mΩ typical at VGS=10V, suitable for high-frequency switching and power control applications.	Original	PDF
NCE70T900I	NCEPOWER	NCE70T900I and NCE70T900K are 700V N-channel super junction power MOSFETs with low on-resistance of 820 mΩ typical, 5A continuous drain current, and ultra-low gate charge, available in TO-251 and TO-252 packages.	Original	PDF
NCE70T1K2I	NCEPOWER	NCE70T1K2I and NCE70T1K2K are N-channel super junction power MOSFETs with 700 V drain-source voltage, 1100 mΩ typical RDS(ON), 4 A continuous drain current, low gate charge, and TO-251/TO-252 packaging.	Original	PDF
NCE70T260I	NCEPOWER	NCE70T260I, NCE70T260K are 700V N-channel super junction power MOSFETs with low on-resistance of 260 mΩ typical, advanced trench gate technology, ultra-low gate charge, and 100% avalanche tested for high reliability in SMPS, PFC, and industrial applications.	Original	PDF
NCE70T360D	NCEPOWER	NCE70T360D, NCE70T360, NCE70T360F are 700V N-channel super junction power MOSFETs with low on-resistance of 330mΩ typical, low gate charge, and designed for high-efficiency power conversion applications such as PFC and SMPS.	Original	PDF
NCE70T1K2K	NCEPOWER	NCE70T1K2I and NCE70T1K2K are 700V N-channel super junction power MOSFETs in TO-251 and TO-252 packages, featuring 1100 mΩ typical RDS(ON), 4A continuous drain current, ultra-low gate charge, and avalanche ruggedness.	Original	PDF
NCE70T1K2R	NCEPOWER	NCE70T1K2R is an N-channel super junction power MOSFET with 700V drain-source voltage, 1100mΩ typical RDS(ON), 4A continuous drain current, and low gate charge, housed in a SOT-223-2L package.	Original	PDF
NCE70T540F	NCEPOWER	NCE70T540D, NCE70T540, NCE70T540F are 700V N-channel super junction power MOSFETs with 540 mΩ RDS(ON), 8A continuous drain current, low gate charge, and avalanche tested, suitable for PFC, SMPS, and UPS applications.	Original	PDF
NCE70T680K	NCEPOWER	NCE70T680I, NCE70T680K are 700V super junction power MOSFETs in TO-251 and TO-252 packages with typical RDS(ON) of 680 mΩ, low gate charge, and 100% avalanche tested for PFC, SMPS, and industrial power applications.	Original	PDF
NCE70T360F	NCEPOWER	NCE70T360D, NCE70T360, NCE70T360F are 700V N-channel super junction power MOSFETs with low on-resistance of 330mΩ typical, low gate charge, and high avalanche capability, suitable for PFC, SMPS, and industrial power applications.	Original	PDF
NCE70T180F	NCEPOWER	NCE70T180, NCE70T180D, NCE70T180F are 700V N-channel super junction power MOSFETs with 180 mΩ max RDS(ON), 21A continuous drain current, low gate charge, and available in TO-220, TO-263, TO-220F packages.	Original	PDF
NCE70T360I	NCEPOWER	NCE70T360K and NCE70T360I are 700V N-channel super junction power MOSFETs with low on-resistance of 330 mΩ typical, 11.5A continuous drain current, and low gate charge, available in TO-252 and TO-251 packages respectively.	Original	PDF

NCE70T360K	NCEPOWER	NCE70T360K and NCE70T360I are 700V N-channel super junction power MOSFETs with low RDS(ON) of 330mΩ, 11.5A continuous drain current, advanced trench gate technology, low gate charge, and 100% avalanche tested for reliable power conversion applications.	Original	PDF
NCE70T260D	NCEPOWER	NCE70T260D, NCE70T260, NCE70T260F are 700V N-channel super junction power MOSFETs with 260 mΩ typical RDS(ON), 15A continuous drain current, low gate charge, and avalanche tested, suitable for PFC, SMPS, and industrial power applications.	Original	PDF
NCE70T900F	NCEPOWER	N-Channel Super Junction Power MOSFET with 700 V drain-source voltage, 820 mΩ typical RDS(ON), 5 A continuous drain current, low gate charge, and TO-263/TO-220 package options.	Original	PDF
NCE70T260T	NCEPOWER	NCE70T260D, NCE70T260, NCE70T260F are 700V N-channel super junction MOSFETs with 260 mΩ typical RDS(on), 15A continuous drain current, low gate charge, and TO-263, TO-220, or TO-220F packaging.	Original	PDF
NCE70T360	NCEPOWER	NCE70T360D, NCE70T360, NCE70T360F are 700V N-channel super junction power MOSFETs with low RDS(ON) of 330mΩ, advanced trench gate technology, low gate charge, and high avalanche capability, suitable for PFC, SMPS and industrial power applications.	Original	PDF
NCE70T680F	NCEPOWER	NCE70T680D, NCE70T680, NCE70T680F are 700V N-channel super junction power MOSFETs with 680 mΩ RDS(ON), 7A continuous drain current, low gate charge, and TO-263/TO-220/TO-220F packaging.	Original	PDF

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Murata Manufacturing Co Ltd GRM31CE70G107MEA8L SMD Multilayer Ceramic Capacitor, 100 uF, 4 V, 1206 [3216 Metric], ? 20%, X7U, GRM Series, 3.2 mm - Tape and Reel (Alt: GRM31CE70G107MEA8L)
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Vishay Intertechnologies RS02B10R00CE70 - Tape and Reel (Alt: RS02B10R00CE70)
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Microchip Technology Inc MLCE7.0AE3 - Bulk (Alt: MLCE7.0AE3)
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