ZXMN3 Search Results

Contextual Info: Product specification ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • Max ID BVDSS Max RDS on TA = 25°C (Note 4) 65mΩ @ VGS = 10V 3.2A 95mΩ @ VGS = 4.5V 2.6A 30V Low on-resistance Fast switching speed

Contextual Info: Product specification ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

Contextual Info: Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low onresistance achievable with 4.5V gate drive.

ZXMN3A01E6TC

Abstract: ZXMN3A01E6 ZXMN3A01E6TA
Contextual Info: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12⍀ D=3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

MLP832

Abstract: ZXMN3AM832 ZXMN3AM832TA ZXMN3AM832TC
Contextual Info: ZXMN3AM832 MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure

ZXMN3A06DN8

Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC
Contextual Info: ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

ZXMN3A06DN8

Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC 3a06d
Contextual Info: ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.035⍀ ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

3G32D

Abstract: TS16949 ZXMN3G32DN8 ZXMN3G32DN8TA
Contextual Info: ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.028 @ VGS= 10V 7.1 0.045 @ VGS= 4.5V 5.6 Description This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed. Features

DS35722

Abstract: ZXMN3A01ZTA
Contextual Info: A Product Line of Diodes Incorporated ZXMN3A01Z ADVANCE INFORMATION 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary V BR DSS Features and Benefits RDS(on) Max ID max TA = 25°C (Note 5) 120mΩ @ VGS = 10V 3.3A 180mΩ @ VGS = 4.5V 2.7A

4422 mosfet

Abstract: 4422 datasheet DC/DC motor forward reverse control ZXMN3B04N8 ZXMN3B04N8TA ZXMN3B04N8TC
Contextual Info: ADVANCED INFORMATION ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V : RDS(on)=0.025W; ID=8.6A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

Contextual Info: ZXMN3B14F ADVANCED INFORMATION 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.08 ; ID=3.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

Contextual Info: ZXMN3A02N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: Product specification ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

58AA

Abstract: ZXMN3A04DN8 ZXMN3A04DN8TA ZXMN3A04DN8TC
Contextual Info: ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.025⍀ ID=7.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

TS16949

Abstract: ZXMN3F30FH ZXMN3F30FHTA
Contextual Info: ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features

TS16949

Abstract: ZXMN3F318DN8 ZXMN3F318DN8TA
Contextual Info: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable

DFN3020B-8

Abstract: Marking G2 SOT23-6
Contextual Info: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V

Contextual Info: A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V

Contextual Info: A Product Line of Diodes Incorporated ZXMN3A01Z ADV AN CE I N FORM AT I ON 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary V BR DSS Features and Benefits RDS(on) Max ID max TA = 25°C (Note 5) 120mΩ @ VGS = 10V 3.3A 180mΩ @ VGS = 4.5V

d67a

Contextual Info: ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.025⍀ D=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

marking 205a

Abstract: D205A
Contextual Info: ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12⍀ D=2.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

Contextual Info: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable

Contextual Info: ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This