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    3A06D Search Results

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    Diodes Incorporated ZXMN3A06DN8TA

    - Tape and Reel (Alt: ZXMN3A06DN8TA)
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    Avnet Americas ZXMN3A06DN8TA Tape & Reel 40 Weeks 500
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    Bristol Electronics ZXMN3A06DN8TA 500 1
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    TME ZXMN3A06DN8TA 500 500
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    Chip 1 Exchange ZXMN3A06DN8TA 60
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    Avnet Silica ZXMN3A06DN8TA 500 42 Weeks 500
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    Win Source Electronics ZXMN3A06DN8TA 37,048
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    Eaton Cutler-Hammer HMCP100R3A06D01

    Hmcp 3P 100A Kpr1A L&l W/Aux Sw 1A1B; |Eaton Cutler Hammer HMCP100R3A06D01
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    Newark HMCP100R3A06D01 Bulk 1
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    RS HMCP100R3A06D01 Bulk 5 Weeks 1
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    SMC Corporation of America ZK2B07K5SL3A-06-DK

    VACUUM GENERATOR, SINGLE UNIT PORT EXHAUST, ZK2B SERIES
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    RS ZK2B07K5SL3A-06-DK Bulk 5 Weeks 1
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    SMC Corporation of America ZK2A07K5RL3A-06-DJ

    VACUUM GENERATOR, SINGLE UNIT SILENCER EXHAUST, ZK2A SERIES
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    RS ZK2A07K5RL3A-06-DJ Bulk 5 Weeks 1
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    SMC Corporation of America ZK2A07K5SL3A-06-DK

    VACUUM GENERATOR, SINGLE UNIT SILENCER EXHAUST, ZK2A SERIES
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    RS ZK2A07K5SL3A-06-DK Bulk 5 Weeks 1
    • 1 $252.68
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    3A06D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ZXMN3A06DN8

    Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC
    Contextual Info: 3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    zxmn3a06dn8zxmn3a06dn8tazxmn3a06dn8tc51a soic PDF

    ZXMN3A06DN8

    Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC 3a06d
    Contextual Info: 3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.035⍀ ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    zxmn3a06dn8zxmn3a06dn8tazxmn3a06dn8tc12m22+251a soic3a06d PDF

    Contextual Info: 3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    zxmn3a06dn8zxmn3a06dn8ta PDF