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    ZX85 Datasheets (40)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    ZX85-12G-S+
    		Mini-Circuits BIAS TEE / SMA / RoHS Original PDF 271.03KB 1
    badge BZX85C11
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C. Original PDF
    badge BZX85C5V6
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C100
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C5V1
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C. Original PDF
    badge BZX85C51
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C160
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C110
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C. Original PDF
    badge BZX85C12
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C. Original PDF
    badge BZX85C47
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C82
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C. Original PDF
    badge BZX85C180
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C30
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C. Original PDF
    badge BZX85C150
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C20
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C8V2
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C43
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C. Original PDF
    badge BZX85C120
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C130
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. Original PDF
    badge BZX85C13
    		SUNMATE electronic Co., LTD Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C. Original PDF
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    ZX85 Price and Stock

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    Rochester Electronics LLC BZX85C15TR5K

    DIODE ZENER 15V 1W DO204AL
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    DigiKey BZX85C15TR5K Bulk 130,000 7,869
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    Rochester Electronics LLC BZX85C30

    DIODE ZENER 30V 1.3W DO41G
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    DigiKey BZX85C30 Bulk 63,066 5,492
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    FLIP ELECTRONICS BZX85C15TR5K

    DIODE ZENER 15V 1W DO204AL
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    DigiKey BZX85C15TR5K Tape & Reel 50,000 25,000
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    Vishay Semiconductors BZX85C68-TR

    DIODE ZENER 68V 1.3W DO204AL
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    DigiKey () BZX85C68-TR Cut Tape 24,108 1
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    BZX85C68-TR Tape & Reel 20,000 5,000
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    Rochester Electronics LLC BZX85C24-ON

    DIODE ZENER 24V 1W DO41
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    DigiKey BZX85C24-ON Bulk 21,437 5,492
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    ZX85 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    zx85

    Abstract: ZX85-12G
    Contextual Info: Bias Tee, Coaxial ZX85-12G+ Typical Performance Data INSERTION LOSS RF Port to RF&DC Port FREQ. (dB) (MHz) 0.2 0.7 2 5 8 30 300 700 1600 2400 3200 4000 4800 5600 6000 6200 7000 7800 8600 9200 10000 12000 +25° 0mA 200mA -55° 0mA +25° +100° 0.09 0.02 0.01


    Original     		ZX85-12G+ 200mA zx85 ZX85-12G PDF

    ZX85-12G-S

    Abstract: ZX85-12G M101802 zx85 GC957 RFDC
    Contextual Info: Coaxial Bias-Tee Wideband Maximum Ratings ZX85-12G+ 0.2 to 12000 MHz Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Features • wideband, 0.2 to 12000 MHz • low insertion loss, 0.6 dB typ. • high current capability, 400 mA


    Original     		ZX85-12G+ 30dBm 400mA GC957 M101802 ZX85-12G ED-12027/6 ZX85-12G-S ZX85-12G M101802 zx85 GC957 RFDC PDF

    ZX85-12G-S

    Abstract: GC957 zx85 ZX85-12G M101802
    Contextual Info: Coaxial Bias-Tee 50Ω ZX85-12G+ Wideband 0.2 to 12000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power • wideband, 0.2 to 12000 MHz • low insertion loss, 0.6 dB typ. • high current capability, 400 mA


    Original     		ZX85-12G+ 30dBm 400mA ZX85-12G-S+ 2002/95/EC) ZX85-12G-S GC957 zx85 ZX85-12G M101802 PDF

    ZX85-12G

    Abstract: ZX85-12G-S RFDC zx85 M101802
    Contextual Info: Coaxial Bias-Tee Wideband ZX85-12G+ 0.2 to 12000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power • wideband, 0.2 to 12000 MHz • low insertion loss, 0.6 dB typ. • high current capability, 400 mA


    Original     		30dBm 400mA ZX85-12G+ GC957 ZX85-12G-S+ M101802 ZX85-12G ED-12027/6 ZX85-12G-S RFDC zx85 PDF

    RFDC

    Abstract: zx85 ZX85-12G M101802 ZX85-12G-S
    Contextual Info: Coaxial Bias-Tee Wideband Maximum Ratings ZX85-12G+ New! 0.2 to 12000 MHz Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Features • wideband, 0.2 to 12000 MHz • low insertion loss, 0.6 dB typ. • high current capability, 400 mA


    Original     		ZX85-12G+ 30dBm 400mA GC957 ZX85-12G-S+ ret000 M101802 ZX85-12G ED-12027/6 RFDC zx85 ZX85-12G-S PDF

    M1018

    Abstract: ZX85-12G RFDC zx85 M101802 ZX85-12G-S
    Contextual Info: Coaxial Bias-Tee Wideband ZX85-12G+ 0.2 to 12000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power • wideband, 0.2 to 12000 MHz • low insertion loss, 0.6 dB typ. • high current capability, 400 mA


    Original     		30dBm 400mA ZX85-12G+ GC957 ZX85-12G-S+ 2002/95/EC) The5-12G+ M101802 ZX85-12G M1018 RFDC zx85 ZX85-12G-S PDF

    ZX85-12G

    Abstract: ZX85-12G-S zx85 RFDC M101802
    Contextual Info: Coaxial Bias-Tee 50Ω Wideband ZX85-12G+ 0.2 to 12000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power • wideband, 0.2 to 12000 MHz • low insertion loss, 0.6 dB typ. • high current capability, 400 mA


    Original     		30dBm 400mA ZX85-12G+ GC957 ZX85-12G-S+ 2002/95/EC) ZX85-12G ZX85-12G-S zx85 RFDC M101802 PDF

    Contextual Info: Coaxial Bias-Tee 50Ω Wideband Maximum Ratings ZX85-12G+ 0.2 to 12000 MHz Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 30dBm Voltage at DC port 25V DC Current 400mA DC resistance from DC to RF&DC port 1.8Ω


    Original     		ZX85-12G+ 30dBm 400mA ZX85-12G-S+ GC957 PDF

    ZX85-12G-S

    Abstract: GC957 ZX851 zx85 ZX85-12G M101802
    Contextual Info: Coaxial Bias-Tee 50Ω ZX85-12G+ Wideband 0.2 to 12000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power • wideband, 0.2 to 12000 MHz • low insertion loss, 0.6 dB typ. • high current capability, 400 mA


    Original     		ZX85-12G+ 30dBm 400mA ZX85-12G-S GC957 ZX851 zx85 ZX85-12G M101802 PDF

    zx85

    Abstract: ZX85-12G RFDC
    Contextual Info: Bias Tee, Coaxial ZX85-12G+ Typical Performance Curves Insertion Loss @ 0mA 0.0 0.2 0.2 0.4 0.4 Insertion Loss dB Insertion Loss (dB) Insertion Loss @ +25° 0.0 0.6 0.8 1.0 1.2 1.4 Insertion Loss @0mA 1.6 Insertion Loss @200mA 1.8 2.0 0.6 0.8 1.0 1.2 1.4


    Original     		ZX85-12G+ 200mA zx85 ZX85-12G RFDC PDF

    ZX85-12G-S

    Abstract: zx85 ZX85-12G RFDC M101802
    Contextual Info: Coaxial Bias-Tee 50Ω ZX85-12G+ Wideband 0.2 to 12000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power • wideband, 0.2 to 12000 MHz • low insertion loss, 0.6 dB typ. • high current capability, 400 mA


    Original     		30dBm 400mA ZX85-12G+ GC957 ZX85-12G-S+ ZX85-12G-S zx85 ZX85-12G RFDC M101802 PDF

    ZX85-12G-S

    Abstract: 30 pha 20 PHA-1 AN-60-042 TB-313 amplifier mini-circuits MCL 321 TB313
    Contextual Info: Technical Note TD-SCDMA Performance vs. Output Power Model: PHA-1+ AN-60-042 TD-SCDMA Base Station MMIC Amplifier Mini-Circuits PHA-1+ Ultra High Dynamic Range MMIC Amplifier is designed specifically for applications which require extremely linear performance, particularly


    Original     		AN-60-042 42EVM-Peak Settings\MCL\Desktop\TED\AN-60-042 ZX85-12G-S 30 pha 20 PHA-1 AN-60-042 TB-313 amplifier mini-circuits MCL 321 TB313 PDF

    ZX85-12G-S

    Abstract: CA1389 N5242A RF TRANSISTOR 1.5 GHZ
    Contextual Info: New Product Announcement! Ultra Low Noise MMIC Amplifier 50Ω PSA-5453+ 0.05 to 4 GHz Click here for data sheet The Big Deal • Ultra Low Noise Figure, 0.7 dB • High IP3/Low Current, 60mA, at 3V • Wideband, up to 4 GHz CASE STYLE: CA1389 Pricing: $1.45 QTY 50


    Original     		PSA-5453+ CA1389 Mini-CircuitsPSA-5453 LowNoiseMMICAmplifieroperatingfrom50MHzto upplyatonly60mAandisinternallymatchedto50 35dBm ZX85-12G-S CA1389 N5242A RF TRANSISTOR 1.5 GHZ PDF

    CA1389

    Abstract: N5242A PSA-5451 ZX85-12G-S hiper
    Contextual Info: New Product Announcement! Ultra Low Noise MMIC Amplifier 50Ω PSA-5451+ 0.05 to 4 GHz Click here for data sheet The Big Deal • Ultra Low Noise Figure, 0.7 dB • High IP3/Low Current, 30mA at 3V • Wideband, up to 4 GHz CASE STYLE: CA1389 Pricing: $1.45 QTY 50


    Original     		PSA-5451+ 30mAat3V CA1389 CA1389 N5242A PSA-5451 ZX85-12G-S hiper PDF

    TB-631

    Abstract: PL-365 CMA-545 LTCC X band
    Contextual Info: Ultra Low Noise High Linearity MMIC Amplifier 50Ω CMA-545+ 0.05 to 6 GHz The Big Deal • Ceramic, Hermetically sealed, Nitrogen Filled • Low profile case, .045” high • Ultra Low Noise Figure, 0.8 dB typ. • Output Power, +20dBm at 1GHz CASE STYLE: DL1721


    Original     		CMA-545+ 20dBm DL1721 TB-631 PL-365 CMA-545 LTCC X band PDF

    CMA-63

    Abstract: OR1K PL-366
    Contextual Info: Flat Gain, High IP3 Monolithic Amplifier 50Ω CMA-63+ 0.01 to 6 GHz The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain • Broadband High Dynamic Range without external Matching Components CASE STYLE: DL1721


    Original     		CMA-63+ DL1721 CMA-63 OR1K PL-366 PDF

    TB-678-105

    Abstract: TB-665 PGA-105 pga105 PGA105 MMIC
    Contextual Info: Ultra Flat Gain, Low Noise Monolithic Amplifier 0.04-2.6 GHz Product Features • Excellent gain flatness, ±0.25 dB over 0.1-2.0 GHz • Gain, 15.0 dB typ. at 2 GHz • High IP3, 39 dBm typ. at 0.9 GHz • P1dB 19.3 dBm typ. at 2 GHz • Low noise figure, 1.9 dB at 2 GHz


    Original     		PGA-105+ DF782 TB-678-105 TB-665 PGA-105 pga105 PGA105 MMIC PDF

    PL-299

    Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-5455+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • High IP3/Low Current, 40mA • Wideband, up to 6 GHz 3mm x 3mm MCLP EIA: QFN Pkg Product Overview Mini-Circuits PMA-5455+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 6


    Original     		PMA-5455+ PL-299 PDF

    GVA-62

    Abstract: N524 gain flattening TB-410-62 N5242A marking 66 mmic sot-89 stm521999
    Contextual Info: Flat Gain, High IP3 Monolithic Amplifier 50Ω GVA-62+ 0.01 to 6 GHz The Big Deal • Ultra Flat Gain • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to RFMD SBB4089Za,b SOT-89 PACKAGE Product Overview


    Original     		SBB4089Za GVA-62+ OT-89 GVA-62 N524 gain flattening TB-410-62 N5242A marking 66 mmic sot-89 stm521999 PDF

    PSA-0012

    Abstract: BLK-18 CA1389 F101 N5242A ZX85-12G-S psa0012
    Contextual Info: High Dynamic Range Monolithic IF Amplifier 50Ω PSA-0012+ 0.05 to 6 GHz The Big Deal • Ideal IF Amplifier CASE STYLE: CA1389 Low Gain Low Noise Figure, 2.4dB High Output Power • Wide band • Miniature Package Product Overview The PSA-0012+ is an advanced wide band, high dynamic range, low noise, high IP3, high output power,


    Original     		PSA-0012+ CA1389 PSA-0012 BLK-18 CA1389 F101 N5242A ZX85-12G-S psa0012 PDF

    PMA-5456

    Abstract: DQ849 N5242A ZX85-12G-S
    Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-5456+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • High IP3/Low Current, 60mA • Wideband, up to 6 GHz 3mm x 3mm MCLP EIA: QFN Pkg Product Overview Mini-Circuits PMA-5456+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 6


    Original     		PMA-5456+ PMA-5456 DQ849 N5242A ZX85-12G-S PDF

    HXG-242

    Abstract: ENV59
    Contextual Info: Mini-Circuits System In Package Ultra High IP3 Amplifier Module 50Ω HXG-242+ 0.7 to 2.4 GHz The Big Deal Ceramic Package • Industry leading High IP3, 46 dBm typ. • Integrated optimization circuits • Linearity with low current consumption ☛ LTE Performance


    Original     		HXG-242+ HXG-242 ENV59 PDF

    Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-5453+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.6 dB • High IP3/Low Current, 60mA • Wideband, up to 6 GHz 3mm x 3mm MCLP EIA: QFN Pkg Product Overview Mini-Circuits PMA-5453+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 6


    Original     		PMA-5453+ PDF

    Contextual Info: New Product Announcement! Ultra Low Noise MMIC Amplifier 50Ω PMA-545+ 0.05 to 6 GHz Click here for data sheet The Big Deal • Ultra Low Noise Figure, 0.8 dB • Ultra High IP3 • Up to 6 GHz Product Overview 3mm x 3mm MCLP [ EIA: QFN Pkg Pricing: $1.49 QTY 20)


    Original     		PMA-545+ PDF