ZX25 Search Results

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

SA30* diode

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

DIODE marking A19

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: MBM29DL16XTE/BE70/90 Data Sheet Retired Product MBM29DL16XTE/BE 70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90
Contextual Info: MBM29LV650UE90/651UE90 Data Sheet Retired Product MBM29LV650UE90/651UE90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

TNY176

Abstract: TNY175 TNY177 TNY178 TNY179 TNY 176 TNY 412 TNY1 QSH-150-01-F-D-A tny174
Contextual Info: Core Tile for ARM1156T2F-S HBI-0154 User Guide Copyright 2006-2007 ARM Limited. All rights reserved. ARM DUI 0331B Core Tile for ARM1156T2F-S User Guide Copyright © 2006-2007 ARM Limited. All rights reserved. Release Information The following changes have been made to this book.

DS05-20880-3E

Abstract: FPT-48P-M19 FPT-48P-M20 SA30* diode
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

DS05-20880-3E

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

M29EWH

Abstract: M29EWL JS28F064M29 JS28F128M29EWL JS28F128M29EWH JR28F064M29EW JS28F064 001FFFF JS28F128M numonyx 106 ball
Contextual Info: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read

Contextual Info: MBM29LV650UE90 MBM29LV651UE90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

KP500 THYRISTOR

Abstract: KP500 KP800 KP300 kp1500 kp 100 thyristor KP2000 KP600 KP1000 zx25
Contextual Info: fa te x e Power Tianjin Century Electronics Co.,Ltd. • i - si Brief Introduction of Company Tianjin C entury E lectronics Co., Ltd was registered in Tianjin P ort Free Trade Zone as an independent co rp o ra tio n in A ugust 1997. S ince its e sta b lish m e n t 10 y ea rs ago, th e com pany h as s h ifte d from a

ARM1176JZF-S

Abstract: TNY176 ARM1176JZFS ARM1176JZ tny175 ARM1176JZF TNY177 tny 176 TNY178 TNY1
Contextual Info: Core Tile for ARM1176JZF-S HBI-0154 User Guide Copyright 2007-2008 ARM Limited. All rights reserved. ARM DUI 0362C Core Tile for ARM1176JZF-S User Guide Copyright © 2007-2008 ARM Limited. All rights reserved. Release Information The following changes have been made to this book.

C0000-H

Abstract: z256
Contextual Info: MBM29LV160T-80/-90/-12 MBM29LV160B-80/-90/-12 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

JS28F128M29EWL

Abstract: JS28F064M29 JS28F128M29 JS28F128M29EWH M29EWT JS28F064 M29EWB JR28F032M29EWT JR28F064M29EW JS28F128M29EW
Contextual Info: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-5E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE90 MBM29LV651UE90 • DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and

ZX70

Abstract: ZX100 ZX25 ZX400 ZX300 ZX16 ZX200 ZX500 ZX860 ZX40
Contextual Info: Power Se m iconductor Devices Rotation R ectifier Diodes — Stud Type and Plate Type Features • C an b e w o rk e d u n d e r g re a te r c e n trifu g a l force A p p lic atio n s • R ectify in g c irc u it • M o to r co n tro l Model If av VpM A

advantage zx6 user manual

Abstract: advantage zx6 manual TNY176 advantage zx6 tny175 ARM11 TNY179 advantage zx6 user manual how do you reset the system TNY178 ARM11 processor data sheet
Contextual Info: Core Tile for ARM11 MPCore ™ HBI-0146 User Guide Copyright 2005-2010 ARM Limited. All rights reserved. ARM DUI 0318F Core Tile for ARM11 MPCore User Guide Copyright © 2005-2010 ARM Limited. All rights reserved. Release Information The following changes have been made to this book.

46-17000

Abstract: A0-A21 Q0-Q15
Contextual Info: ADVANCED INFORMATION MX28F640W30T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES • Architecture - Bit Organization: 4,194,304 x 16 - Multiple 4Mb partitions - RWW Read While Write or RWE (Read While Erase) - Sector Erase (Sector structure : 4Kword x 8 (parameter sectors), 32Kword x 127 (main sectors)

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

QSH-060-01-F-D-A

Abstract: Zx224 ZX36 Z123 Diode ZX229 intel Z68 MOTHERBOARD pcb CIRCUIT diagram INTERNAL ARCHITECTURE OF ARM1136 Microprocessor z85 Zx112 samtec QSH-060
Contextual Info: Core Tile HBI-0131 CT926EJ-S and CT1136JF-S HBI-0141 (CT7TDMI and CT7TDMI-S) User Guide Copyright 2004-2009 ARM Limited. All rights reserved. ARM DUI 0273F (ID042109) Core Tile User Guide Copyright © 2004-2009 ARM Limited. All rights reserved. Release Information

Contextual Info: MBM29DL16XTE70/90 MBM29DL16XBE70/90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-4E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE90 MBM29LV651UE90 • DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29LV160B MBM29LV160T
Contextual Info: MBM29LV160T-80/-90/-12 / MBM29LV160B -80/-90/-12 -80/-90/-12 80/-90/-12 Data Sheet Retired Product MBM29LV160T Cover Sheet /MBM29LV160B - This product has been retired and is not recommended for new designs. Availability of this document is retained for reference