ZO 107 MA 75 535
Abstract: zo 107
Contextual Info: Voltage Controlled Oscillators D u al O utput 2 5 to 1025 M Hz FREQ. MHZ MODEL NO, Coaxial POWER o mm ctttin iyp . Min. Max Main. Aux. TUNING PHASE NOISE PULLING PUSHING TUNING HARMONICS MHz MH?/V SENSITIVIIY VOLTAGE dBc/H z SSB at offset d ie v frequencies:
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ZOS-50
ZOS-75
ZOS-50
ZOS-50)
ZO 107 MA 75 535
zo 107
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NE5204AN
Abstract: NE5204A NE5204AD NE5205 SA5204AD SA5204AN zo 103 ma
Contextual Info: Philips Semiconductors RF Communications Products Product specification Wide-band high-frequency amplifier DESCRIPTION NE/SA5204A PIN CONFIGURATION The NE/SA5204A family of wideband amplifiers replaces the NE/SA5204 family. The ‘A’ parts are fabricated on a rugged 2µm
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NE/SA5204A
NE/SA5204A
NE/SA5204
200MHz.
350MHz.
NE5204AN
NE5204A
NE5204AD
NE5205
SA5204AD
SA5204AN
zo 103 ma
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ZO 103
Abstract: zo 103 ma 2 way antenna splitter, circuit diagram 100MHz high-frequency generator SA5205AD ZD 103 ma operational amplifier discrete schematic schematics power supply satellite receiver tv schematic diagram PHILIPS ZD 103
Contextual Info: INTEGRATED CIRCUITS SA5205A Wide-band high-frequency amplifier Product specification Replaces data of February 24, 1992 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Wide-band high-frequency amplifier SA5205A
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SA5205A
SA5205A
SA5205
24mAoration
ZO 103
zo 103 ma
2 way antenna splitter, circuit diagram
100MHz high-frequency generator
SA5205AD
ZD 103 ma
operational amplifier discrete schematic
schematics power supply satellite receiver
tv schematic diagram PHILIPS
ZD 103
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single ic 1hz clock generator
Abstract: 87021AMI ICS87021I
Contextual Info: ICS87021I ÷1/÷2 DIFFERENTIAL-TO-LVCMOS/LVTTL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87021I is a high perfor mance ÷1/÷2 ICS Differential-to-LVCMOS/LVTTL Clock Generator HiPerClockS and a member of the HiPerClockS™ family of High Performance Clock Solutions from IDT. The CLK,
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ICS87021I
ICS87021I
single ic 1hz clock generator
87021AMI
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ZO 103
Abstract: High-Frequency Wideband Power Transformers ZD 103 zo 103 ma ZD 103 ma operational amplifier discrete schematic tv schematic diagram PHILIPS 8505a SA5204A SA5204
Contextual Info: INTEGRATED CIRCUITS SA5204A Wide-band high-frequency amplifier Product specification Replaces data of Feb 25, 1992 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Wide-band high-frequency amplifier DESCRIPTION
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SA5204A
SA5204A
SA5204
SA5205.
350MHz
ZO 103
High-Frequency Wideband Power Transformers
ZD 103
zo 103 ma
ZD 103 ma
operational amplifier discrete schematic
tv schematic diagram PHILIPS
8505a
SA5204
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ECL 802
Abstract: ZO 103 capacitor 103 .01uf bourns capacitor network
Contextual Info: Features • ■ ■ ■ Optimize data transmission in ECL systems through proper termination between drivers and receivers Minimize overshoot, undershoot, and ringing while increasing noise immunity Provide decoupling capacitors ■ Minimize space and routing problems,
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Transistor TT 2246
Abstract: 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P
Contextual Info: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:
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ATF-36163
OT-363
SC-70)
Transistor TT 2246
4747E
Gm 3842
atf 36163 Low Noise Amplifier
ATF-36163
ATF-36163-BLK
ATF-36163-TR1
HEMT marking P
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Transistor TT 2246
Abstract: 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1
Contextual Info: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:
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ATF-36163
OT-363
SC-70)
5965-4747E
Transistor TT 2246
4747E
TT 2246 transistor
atf 36163 Low Noise Amplifier
ATF-36163
ATF-36163-BLK
ATF-36163-TR1
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AT-42085
Abstract: at-42085g S21E at42085g
Contextual Info: AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many
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AT-42085
AT-42085
5965-8913EN
5989-2655EN
at-42085g
S21E
at42085g
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Hitachi DSA002756
Abstract: 2sc5246
Contextual Info: 2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline 2SC5246 Absolute Maximum Ratings Ta = 25°C
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2SC5246
ADE-208-264
Hitachi DSA002756
2sc5246
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transistor TT 2146
Abstract: AT-32032 AT-32032-BLK 32032
Contextual Info: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery
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AT-32032
AT-32032
OT323
SC-70)
OT-323
5965-6216E
5989-2644EN
transistor TT 2146
AT-32032-BLK
32032
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Transistor TT 2246
Abstract: A004R ATF-36163 ATF-36163-BLK ATF-36163-TR1
Contextual Info: ATF-36163 1.5 –18 GHz Surface Mount Pseudomorphic HEMT Data Sheet Description Features The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor PHEMT , in the SOT-363 (SC-70) package. When optimally matched for minimum noise figure, it will provide a noise figure of
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ATF-36163
ATF-36163
OT-363
SC-70)
5965-4747E
5989-1915EN
Transistor TT 2246
A004R
ATF-36163-BLK
ATF-36163-TR1
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transistor SMD MARKING CODE 772
Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1
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P-SOT343-4-1
Q62702-G0116
RN/50
GPS05605
transistor SMD MARKING CODE 772
SMD MARKING CODE 201 952
transistor zo 607
zo 607 MA
smd Transistor 1117
transistor smd code marking 404
DSA0062290
transistor zo 107
in 4436
zo 607
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IEC 62 code
Abstract: PBR941
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor
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M3D088
PBR941
PBR941
SCA60
125104/1200/05/pp16
771-PBR941-T/R
IEC 62 code
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Hitachi DSA002756
Contextual Info: 2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline 2SC5247 Absolute Maximum Ratings Ta = 25°C
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2SC5247
ADE-208-281
Hitachi DSA002756
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e104
Abstract: E231 ZO 103 E103 E200 E220 KE103 KE104 KE200 KE220
Contextual Info: www.fairchildsemi.com KE Series Encased Amplifiers Features • ■ ■ ■ ■ General Description The KE Series amplifiers are designed to take full advantage of Fairchild’s high-performance DCcoupled operational amplifiers in an easy-to-use, encased form. This format makes the KE Series
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MAX414
Abstract: 1259
Contextual Info: MAX414 / 4HIS&, O A J j t y - t ' , f''ÊlE:250/zVniax 0 A J j M ^ m E : 2 .4 n V / / ~ Hz m Œ $ O T : ± 2. 4 ^ ± 5V :4 .5V / /¿s • 'f ë W B f lE :10mA •y - x l i& t y ^ -y ME m m , Î& W ±M Î¥ & W Vs=±5V Ta=25°C MAXIM 1ï • A^ms. m&a * 12 ^ m
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MAX414
MAX414
MAX414B
Ta-25Â
RL-10k,
1259
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ZO 103 NA
Abstract: MAX412 1259 552SA
Contextual Info: - 185 MAXIM 0 ,1S MAX412 • f t * S 8 12 t S i E A fi « ff -V s-0. 3—*V s+ 0.3 H » A * t t E -V s —+Vs C:0—+70, E: -40—+85 » ^ a * PA:552, SA:471, JA:640 li S S * ìa a *s te ^ 0. 25 V os 0.12 x -n m ^ v s . TC/Vos 1 vo«ia*h'V 7i/ v o c o f i ^ s e t t Vos/time
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max412
MAX412
MAX412B
l1E03BH
ZO 103 NA
1259
552SA
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TLC2262
Abstract: TLC2262A TLC2262AID TLC2262AMFK TLC2262AMJG TLC2262CD TLC2262ID TLC2262MFK TLC2262Y
Contextual Info: TLC2262, TLC2262A, TLC2262Y Advanced LinCMOS RAIL-TO-RAIL DUAL OPERATIONAL AMPLIFIERS SLOS128B – AUGUST 1993 – REVISED MAY 1996 D D D D D D Output Swing includes Both Supply Rails Low Noise . . . 12 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ
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TLC2262,
TLC2262A,
TLC2262Y
SLOS128B
TLC2262A)
TLC2262
TLC2262A
TLC2262AID
TLC2262AMFK
TLC2262AMJG
TLC2262CD
TLC2262ID
TLC2262MFK
TLC2262Y
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ZO 103
Abstract: ECL 802
Contextual Info: NT IA PL • *R oH S CO M Features ■ ■ ■ ■ Optimize data transmission in ECL systems through proper termination between drivers and receivers Minimize overshoot, undershoot, and ringing while increasing noise immunity Provide decoupling capacitors
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TLV2422
Abstract: TLV2432 TLV2432A TLV2432AID TLV2432CD TLV2434 TLV2434A
Contextual Info: TLV2432, TLV2432A, TLV2434, TLV2434A Advanced LinCMOS RAIL-TO-RAIL OUTPUT WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS SLOS168F – NOVEMBER 1996 – REVISED MARCH 2001 D D D D D D Output Swing Includes Both Supply Rails Extended Common-Mode Input Voltage
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TLV2432,
TLV2432A,
TLV2434,
TLV2434A
SLOS168F
TLV243xA)
TLV2422
TLV2432
TLV2432A
TLV2432AID
TLV2432CD
TLV2434
TLV2434A
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npn phototransistor package
Contextual Info: SIEMENS BP 103 SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm FEATURES Maximum Ratings • • • • • • • • • Operating and Storage Temperature Range Hop, Tstg) . -4 0° to +80°C Soldering Temperature (¿2 mm from case bottom)
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LD242
cE02H
npn phototransistor package
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transistor TT 2146
Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA
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AT-32032
OT-323
SC-70)
SC-70
OT-323)
5965-6216E
transistor TT 2146
AT-32032
AT-32032-BLK
AT-32032-TR1
60668
transistor ajw
64256
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TLC2262
Abstract: TLC2262A TLC2264 TLV2432 TLV2442
Contextual Info: TLC226x, TLC226xA Advanced LinCMOS RAIL-TO-RAIL OPERATIONAL AMPLIFIERS SLOS177D – FEBRUARY 1997 – REVISED MARCH 2001 D D D D D D Output Swing includes Both Supply Rails Low Noise . . . 12 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ
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TLC226x,
TLC226xA
SLOS177D
TLC2262A)
TS27M2/M4
TLC27M2/M4
TLC2262
TLC2262A
TLC2264
TLV2432
TLV2442
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