ZENNER 10V Search Results

sj 2258

Contextual Info: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • A ve lanche-proof • Including G-S Zenner diode

1823-01R

Abstract: 2SK1823-01R T151 FA-MT A2260
Contextual Info: 2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES I Features Outline Drawings ►High current ►-ow on-resistance ►slo secondary breakdown ►.ow driving power ►High forward Transconductance ►\valanche-proof ►ncluding G-S Zenner diode

FA 23 zenner

Abstract: A2466 DO810 2SK2259-01MR K2259 bojk
Contextual Info: 2SK2259-01MR FUJI PO W ER M O S-F ET N-OHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings I Features »High current »Low on-resistance »Mo secondary breakdown »Low driving power 1h igh forward Transconductance 'Avalanche-proof 'Including G-S Zenner diode

LTTG

Abstract: EM 257
Contextual Info: 4 4 ^ 2 0 5 0 G13 D35 245 • H I T 4 2SK318— HI TA CHI/ OP TO ELE CTR ON ICS blE » SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.

2SK317

Abstract: 2sk317 hitachi J-D4A rfpak zenner 10v D013Q3M
Contextual Info: • 2SK317 44‘ìbBDS 0013033 47S « H I T H blE J> HIT AGHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. •

K2259

Abstract: 2SK2259-01M 2SK2259-01MR T151 FA 23 zenner A2466
Contextual Info: 2SK2259-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • h igh forward Transconductance • Avalanche-proof • Including G-S Zenner diode

H150

Contextual Info: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IHA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Lovv driving power • High forward Transconductance • Avc lanche-proof • Including G-S Zenner diode

2SK318

Contextual Info: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

2SK318

Abstract: "beryllium oxide" 20DRAM
Contextual Info: 44^205 2SK318- 0013D35 245 • HIT 4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

2SK317

Abstract: zenner 10v 2sk317 hitachi
Contextual Info: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.

2SK317

Abstract: HF VHF power amplifier 2sk317 hitachi k317
Contextual Info: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

2SK2259-01M

Abstract: 00031b B080
Contextual Info: 2SK2259-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Low driving power • High forw ard Transconductance

Contextual Info: 2SK1822-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features I Outline Drawings • High current • Low on-resistance b 5*02 • No secondary breakdown 2 7±0 2 • Low driving power • High forward Transconductance

1600 v mosfet

Contextual Info: 2SK2166-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ _ - FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power

Contextual Info: P ^p i GEC P L E S S E Y DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The D C 1250 S eries are gallium arsenide bulk effect d e vice s fo r the g e nera tion of C W m icrow ave po w e r in the range 4 G H z to 1 8 G H z d e pend ing on the cavity and diodes

BH6799

Abstract: BH6799FVM BD698 BD6989
Contextual Info: TECHNICAL NOTE DC Brushless Motor Driver Series for Cooling Fans Low-voltage Single-phase Full-wave DC Brushless Fan Motor Drivers BH6766FVM, BD6989FVM, BH6799FVM, BH6789FVM ●Description This is the summary of models that suit for notebook PC cooling fan. They employ Bi-CMOS and Bi-CDMOS process, and

GUNN DIODE plessey

Abstract: plessey 10 Gunn oscillator plessey 10 GHz Gunn oscillator DC1230 DC1252 DC1280 Gunn Diode DC1281F
Contextual Info: 37bfl522 GDIÖS'm b3b « P L S B Si GEC PLESSEY S E M I C O N D U C T O R S DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The DC1250 Series are gallium arsenide bulk effect devices for the generation of CW microwave power in the range 4GHz to18GHz depending on the cavity and diodes

CHN 950

Abstract: chn 630
Contextual Info: 2SK1823-01R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-IHA SERIES • Features Outline Drawings • High current • -ow on-resistance • Mo secondary breakdown • .ow driving power • High forward Transconductance

Contextual Info: 2SK2166-01R FUJI POWER M OS-FET N-OHANIMEL SILICON POWER MOS-FET - F A P - I I I A S E R I E S • reatures Outline Drawings • I- igh cu rre n t • L dw on-resistance • f\o secondary breakdown • L jw d riving p o w e r

oms 450

Abstract: 2SK2166-01 2SK2166-01R H150
Contextual Info: 2 S K 2 1 6 6 - 1 FUJI PO W ER M O S-F ET R N-OHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • =eatures Outline Drawings • I- igh current • L dw on-resistance • Fso secondary breakdown • L:>w driving power • High forward Transconductance • /Walanche-proof

A2305

Abstract: A2306 2SK1969-01 ZENNER A2 SC-65 2SK1969
Contextual Info: 2SK1969-01 FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R I E S O utline D raw ings I F e a tu r e s *Hig i current ' Low on-resistance 'N o secondary breakdown ' L o v driving power »Hig i forward Transconductance 'Avalanche-proof

CQ 419

Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
Contextual Info: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof

AE 1600-S

Contextual Info: 2SK2165-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R IE S • Features ■ Outline Drawings • Hie|h current • Low on-resistance • No secondary breakdown • Low driving power • Hitjh forward Transconductance • Avulanche-proof

a2305

Abstract: A2307 2sk1969 N CH MOSFET
Contextual Info: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance