ZENER DIODE 75A Search Results

Contextual Info: mnm^/ux ms Power-Clamper Surface Mount Device Zener Diode with Fast Recovery Diode • f t M U ! OUTLINE ST02D-170F2 170V 200W ftft ■ K i F R D S r Ü ê - ■H i Feature ■ Power Zener Diodes with FRD ■ SMD Package ■ Application for snubber circuit

GDE 13a DIODE

Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient

AX078

Contextual Info: 7 * '> - w u x /w * m s Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode IfttB IH OUTLINE ST02D-170 Package : AX078 170V 200W « i t Feature • Power Zener Diodes with FRD ■ Axial Package ■ Application for snubber circuit £v 'T r'WSST ¿5v

ST03D-140

Abstract: diode zener ZD 15 diode zener ZD 75 v diode zener ZD 200 U180 tl251c st03d
Contextual Info: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • ftM U ! OUTLINE S T 3 D - 1 4 Unit:mm Weight 0.65 g Package : A X 10 145V 300W ftft 26.5 26.5 ¡ > 4 .4 Feature ° - ■ Power Zener Diodes with FRD ■ Axial Package

marking JC diode

Abstract: ST02D-170 AX078 U180 Zener Diode marking 3a AX-07 ST02D ST02D170 sa marking axial diode
Contextual Info: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • ftM U ! OUTLINE S T 2 D Unit:mm Weight 0.38g Package : AX078 - 1 7 0 170V 200W ftft 27.5 27.5 <¿>4.0 Feature ° - ■ Power Zener Diodes with FRD ■ Axial Package ■ Application for snubber circuit

diode zener ZD 150

Abstract: AX078 ST02D-200 vf170 U180 ST02D
Contextual Info: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • ftM U ! OUTLINE ST02D-200 200V 200W ftft Feature ■ Power Zener Diodes with FRD ■ Axial Package ■ Application for snubber circuit £v 'T rw s s r S v For details of outline dimensions, refer to our web site or the

Contextual Info: EMZ6.8E Diodes Zener diode EMZ6.8E zExternal dimensions Units : mm zApplications Voltage regulation 1.6±0.2 +0.1 0.2 -0.05 0.8±0.1 0.50.5 6C 0.3 +0.1 -0.05 zConstruction Silicon epitaxial planar 0.55±0.1 0~0.1 0.15±0.05 ROHM : EMD3 EIAJ : SC-75A JEDEC : SOT-416

rectifier diode 20 amp 800 volt

Abstract: 3528 MR2528 MRL2528 MR3528 MR5028 MRL3528 50 Amp 300 volt diode MR502-8
Contextual Info: MR2528/MRL2528 - 25 Amp MR3528/MRL3528 - 35 Amp MR5028/MRL5028 - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Coloured ring denotes cathode Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection

ST02D-170F2

Abstract: AHA 500 ST02D-1 Zener Diode marking 3a DIODE CQ U180
Contextual Info: m n m ^ /u x Power-Clamper Surface M ount D evice m s Z e n e r Diode with F as t Recovery Diode • f t M U ! OUTLINE ST02D-170F2 170V 200W ftft ■H i Feature ■ Power Zener Diodes with FRD ■ SMD Package ■ Application for snubber circuit £ V\ 'T ¿5 V

rectifier diode 20 amp 800 volt

Abstract: 80 Amp current 100 volt diode 50 Amp 300 volt diode alternator diode 65 amp alternator diode RZ3524C rectifier diode pressfit zener alternator rectifier 400 amp 20 volt rectifier RZ2524C
Contextual Info: RZ2524C/A - 25 Amp RZ3524C/A - 35 Amp RZ5024C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection

alternator rectifier

Abstract: 100 Amp current 800 volt diode SCD0861-1 RZ2538A RZ2538C RZ3538A RZ3538C RZ5038A RZ5038C
Contextual Info: RZ2538C/A - 25 Amp RZ3538C/A - 35 Amp RZ5038C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection

DSA003643

Contextual Info: HZM7.5FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-616A Z Rev.1 Nov. 2001 Features • HZM7.5FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA00306

Contextual Info: HZM7.5FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-616 Z Rev 0 April 1, 1998 Features • HZM7.5FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM7.5FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-616 Z Rev 0 Apr. 1998 Features • HZM7.5FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

GE Transient Voltage Suppression Manual

Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

40n60c3

Abstract: g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26
Contextual Info: [ /Title HGT G40N6 0C3R /Subject (75A, 600V, Rugged, UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 0C3 6 S N E

pin diagram of bts 149

Abstract: BSP 76 "pin compatible" ANPS027E 13450M bsp mosfet
Contextual Info: HL Application Note BSP 75, BSP 75A Monolithic Smart Power Low-Side Switch extends the HITFET family in the low power area Claus Preuschoff Introduction The introduction of the TEMPFET® TEMperature Protected FET was the start of the era of Siemens Smart Power low side switches. The integration of further protective functions,

fully protected p channel mosfet

Abstract: BSP 76 "pin compatible" bsp mosfet POWER SUPPLY BTS SIEMENS BSP 78 HITFET Car Battery 12V short circuit
Contextual Info: HL Application Note BSP 75, BSP 75A Monolithic Smart Power Low-Side Switch extends the HITFET family in the low power area Claus Preuschoff Introduction The introduction of the TEMPFET® TEMperature Protected FET was the start of the era of Siemens Smart Power low side switches. The integration of further protective functions,

40n60c3

Abstract: 40n60 40N60C3R HGTG40N60C3R LD26 RHRP30120
Contextual Info: HGTG40N60C3R Semiconductor 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices

40N60C3R

Abstract: HGTG40N60C3R LD26 RHRP30120 40N60C3
Contextual Info: HGTG40N60C3R 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices

electrovalve connector

Abstract: DIODO LED VERDE DIODO LED diodo led rosso t 4 diodo diodo led giallo diodo zener diode B8 B9 zener diode EN175301803
Contextual Info: CONNECTORS | CONNETTORI version 110125 Circuit variants for electrovalve connectors Varianti circuito nei connettori per elettrovalvole • Single electrovalve connectors data sheets contain only the most requested circuits, in these pages are listed many others circuits that can be useful for specific applications.

40n60c3

Abstract: 40N60C3R RHRP30120 HGTG40N60C3R LD26 40n60
Contextual Info: HGTG40N60C3R S E M I C O N D U C T O R 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

G40N60

Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
Contextual Info: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction